Diodes MMSTA92 User Manual
MMSTA92
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (MMSTA42)
• Ideal for Low Power Amplification and Switching
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Notes 3 and 4)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
= 25°C unless otherwise specified
A
BE
K
J
C
B
A
C
G
H
V
V
V
R
Tj, T
E
CBO
CEO
EBO
I
C
P
d
JA
θ
STG
C
B
M
L
ED
-300 V
-300 V
-5.0 V
-100 mA
200 mW
625
-55 to +150
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α
0° 8°
All Dimensions in mm
°C/W
°C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
-300
-300
-5.0
⎯
⎯
⎯
⎯
⎯
V
V
V
-250 nA
-100 nA
IC = -100μA, IE = 0
IC = -1.0mA, IB = 0
IE = -100μA, IC = 0
VCB = -200V, IE = 0
V
= -3.0V, IC = 0
CE
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
h
V
CE(SAT)
V
BE(SAT)
25
FE
40
25
⎯
⎯
⎯ ⎯
-0.5 V
-0.9 V
IC = -1.0mA, VCE = -10V
IC = -10mA, VCE = -10V
IC = -30mA, V
CE
= -10V
IC = -20mA, IB = -2.0mA
IC = -20mA, IB = -2.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
C
cb
f
T
⎯
50
6.0 pF
MHz
⎯
VCB = -20V, f = 1.0MHz, IE = 0
VCE = -20V, IC = -10mA,
f = 100MHz
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001 , w hich
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30174 Rev. 9 - 2 1 of 3
www.diodes.com
MMSTA92
© Diodes Incorporated
P
P
OWER
PAT
O
C
O
CTO
R
T
O
T
TER
C CUR
RENT G
MIT
TER VOLTAG
G
T
H
P
R
ODUCT
H
200
150
N (mW )
I
100
DISSI
,
50
D
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
150
Fig. 1, Max Power Dissipation vs. Ambient Temperature
10,000
1,000
AIN
100
Note 1
175
200
1.0
0.9
0.8
0.7
EMI
0.6
I
C
= 10
I
B
0.5
LLE
0.4
T = 150°C
0.3
SATURATION VOLTAGE (V)
0.2
CE(SAT)
V,
A
T = 25°C
A
0.1
T = -50°C
0
110
I , COLLECTOR CURRENT (mA)
Fig. 2, Collector Emi tt er Saturat io n Vol t age vs. Co llect or Current
C
100
A
1,000
1.0
V = 5V
0.9
E (V)
0.8
CE
T = -50°C
A
0.7
T = 25°C
0.6
A
0.5
FE
h, D
10
1
1
10 1,000
I , COLLECTOR CURRENT (mA)
C
100
Fig. 3, DC Current Gain vs. Collector Current
100
V = 5V
CE
z)
(M
10
AIN BANDWID
T
f,
1
1
I , COLLECTOR CURRENT (mA)
C
Fig. 5, Gain Bandwidth Product vs. Collector Current
10
T = 150°C
0.4
A
0.3
BE(ON)
V , BASE E
0.2
0.1
0.1
Fig. 4, Base Emitter Voltage vs. Collector Current
110
I , COLLECTOR CURRENT (mA)
C
100
DS30174 Rev. 9 - 2 2 of 3
www.diodes.com
MMSTA92
© Diodes Incorporated
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