Diodes MMSTA64 User Manual
MMSTA63/MMSTA64
PNP SURFACE MOUNT DARLINGTON TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Types Available
(MMSTA13/MMSTA14)
• Ultra-Small Surface Mount Package
• Ideal for Medium Power Amplification and Switching
• High Current Gain
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 3 and 4)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
• MMSTA63 Marking K2E, K3E, See Page 3
• MMSTA64 Marking K3E, See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.006 grams (approximate)
BE
K
J
B
A
C
G
H
C
C
B
M
L
ED
E
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α
All Dimensions in mm
0° 8°
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
= 25°C unless otherwise specified
A
V
CBO
V
CEO
V
EBO
IC
Pd
R
θ
Tj, T
JA
STG
-30 V
-30 V
-10 V
-500 mA
200 mW
625 °C/W
-55 to +150
°C
DS30159 Rev. 9 - 2 1 of 3
www.diodes.com
MMSTA63/MMSTA64
© Diodes Incorporated
P, P
OWER
PATIO
N
C
O
CTO
R T
O
T
TER
D
C
C
U
R
R
N
T
G
N
T
T
R VO
TAG
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
(BR)CEO
I
CBO
I
EBO
-30
⎯
⎯
⎯
V
-100 nA
-100 nA
IC = -100μA VBE = 0V
VCB = -30V, IE = 0
V
= -10V, IC = 0
EB
ON CHARACTERISTICS (Note 5)
DC Current Gain MMSTA63
MMSTA64
MMSTA63
MMSTA64
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
hFE
V
CE(SAT)
V
BE(SAT)
5,000
10,000
10,000
20,000
⎯
⎯
⎯ ⎯
-1.5 V
-2.0 V
IC = -10mA, VCE = -5.0V
IC = -10mA, V
= -5.0V
CE
IC = -100mA, VCE = -5.0V
IC = -100mA, V
= -5.0V
CE
IC = -100mA, IB = -100μA
IC = -100mA, VCE = -5.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Notes: 5. Short duration pulse test used to minimize self-heating effect.
200
fT
125
⎯
1.20
VCE = -5.0V, IC = -10mA,
MHz
f = 100MHz
1.15
1.10
150
(mW)
1.05
1.00
0.95
EMI
0.90
0.85
100
DISSI
D
50
0
10,000,000
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75 100 125
Fig. 1, Max Power Dissipation vs.
Ambient Temperature
150
175
200
LLE
SATURATION VOLTAGE (V)
CE(SAT)
V,
0.80
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
1
10
I , COLLECTOR CURRENT (mA)
C
100
Fig. 2, Collector Emitter Saturation Voltage
vs. Collec to r Current
1,000
1.6
1.5
1.4
1,000,000
AI
E
100,000
1.3
E (V)
1.2
L
1.1
1.0
0.9
E
0.8
10,000
0.7
0.6
FE
h,
1,000
100
1
10
I , COLLECTOR CURRENT (mA)
C
100
1,000
Fig. 3, DC Current Gain vs.
Collector Current
0.5
0.4
0.3
BE(ON)
V , BASE EMI
0.2
0.1
0.1
1
I , COLLECTOR CURRENT (mA)
C
10
100
Fig. 4, Base Emitter Voltage vs.
Collector Current
DS30159 Rev. 9 - 2 2 of 3
www.diodes.com
MMSTA63/MMSTA64
© Diodes Incorporated
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