Page 1
MMSTA55/MMSTA56
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available
(MMSTA05/MMSTA06)
• Ideal for Low Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 3 and 4)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• MMSTA55 Marking K2H, K2G (See Page 3)
• MMSTA56 Marking K2G (See Page 3)
• Ordering & Date Code Information: See Page 3
• Weight: 0.006 grams (approximate)
Maximum Ratings @T
Characteristic Symbol MMSTA55 MMSTA56 Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30167 Rev. 10 - 2 1 of 3
= 25°C unless otherwise specified
A
K
J
B
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A
C
BE
G
H
C
E
V
CBO
V
CEO
V
EBO
I
C
P
d
R
JA
θ
Tj, T
STG
C
B
M
L
ED
-60 -80 V
-60 -80 V
-4.0 V
-500 mA
200 mW
625
-55 to +150
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α
All Dimensions in mm
SOT-323
0° 8°
°C/W
°C
MMSTA55/MMSTA56
© Diodes Incorporated
Page 2
P, P
OWER
PATIO
C
O
CTO
R T
O
T
TER
C
C
URRENT
G
T
T
R VOLT
G
@T
Electrical Characteristics
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage MMSTA55
MMSTA56
Collector-Emitter Breakdown Voltage MMSTA55
MMSTA56
Emitter-Base Breakdown Voltage
Collector Cutoff Current MMSTA55
MMSTA56
Collector Cutoff Current MMSTA55
MMSTA56
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Notes: 5. Short duration pulse test used to minimize self-heating effect.
200
150
N (mW)
Characteristic Symbol Min Max Unit Test Condition
= 25°C unless otherwise specified
A
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
h
V
CE(SAT)
V
BE(SAT)
-60
-80
-60
-80
-4.0
⎯
⎯
FE
100
⎯
⎯
f
T
50
⎯
⎯
⎯
-100 nA
-100 nA
⎯ ⎯
-0.25 V
-1.2 V
⎯
V
V
V
MHz
IC = -100μA, IE = 0
IC = -1.0mA, IB = 0
IE = -100μA, IC = 0
VCB = -60V, IE = 0
VCB = -80V, IE = 0
V
= -60V, IBO = 0V
CE
V
= -80V, IBO = 0V
CE
IC = -10mA, VCE = -1.0V
IC = -100mA, V
= -1.0V
CE
IC = -100mA, IB = -10mA
IC = -100mA, VCE = -1.0V
VCE = -1.0V, IC = -100mA,
f = 100MHz
0.25
I
C
= 10
I
B
0.20
EMI
T = 25°C
A
100
DISSI
50
D
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75 100 125
150
175
Fig. 1, Max Power Dissipation vs. Ambient Temperature
1,000
V = 5V
CE
T = 150°C
A
AIN
100
T = 25°C
FE
h, D
A
T = -50°C
A
200
0.15
LLE
0.10
T = 150°C
SATURATION VOLTAGE (V)
CE(SAT)
0.05
V,
0
110
Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current
A
100
I , COLLECTOR CURRENT (mA)
C
T = -50°C
A
1,000
1.0
0.9
V = 5V
CE
E (V)
0.8
A
0.7
0.6
E
0.5
T = -50°C
A
T = 25°C
A
T = 150°C
A
0.4
0.3
BE(ON)
0.2
V , BASE EMI
10
1
10
I , COLLECTOR CURRENT (mA)
C
100
Fig. 3, DC Current Gain vs. Collector Current
1,000
DS30167 Rev. 10 - 2 2 of 3
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0.1
10.1
I , COLLECTOR CURRENT (mA)
C
10 100
Fig. 4 Base Emitter Voltage vs. Collector Current
MMSTA55/MMSTA56
© Diodes Incorporated
Page 3
G
H P
R
ODU
C
H
100
z)
T (M
V = 5V
CE
10
AIN BANDWIDT
T
f,
1
110
I , COLLECTOR CURRENT (mA)
Fig. 5 Gain Bandwid t h Product vs. Collector Current
C
100
Ordering Information (Notes 4 and 6)
Device Packaging Shipping
MMSTA55-7-F SOT-323 3000/Tape & Reel
MMSTA56-7-F SOT-323 3000/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004
Code J K L M N P R
Month Jan Feb Mar Apr May Jun Jul
Code 1 2 3 4 5 6 7
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
K2x
IMPORTANT NOTICE
LIFE SUPPORT
K2x = Product Type Marking Code, e.g. K2H = MMSTA55
YM = Date Code Marking
Y = Year ex: N = 2002
YM
M = Month ex: 9 = September
2005 2006 2007 2008 2009 2010 2011 2012
S T U V W X Y Z
Aug Sep Oct Nov Dec
8 9 O N D
DS30167 Rev. 10 - 2 3 of 3
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MMSTA55/MMSTA56
© Diodes Incorporated
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