Diodes MMSTA56 User Manual
MMSTA55/MMSTA56
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available
(MMSTA05/MMSTA06)
• Ideal for Low Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 3 and 4)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• MMSTA55 Marking K2H, K2G (See Page 3)
• MMSTA56 Marking K2G (See Page 3)
• Ordering & Date Code Information: See Page 3
• Weight: 0.006 grams (approximate)
Maximum Ratings @T
Characteristic Symbol MMSTA55 MMSTA56 Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30167 Rev. 10 - 2 1 of 3
= 25°C unless otherwise specified
A
K
J
B
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A
C
BE
G
H
C
E
V
CBO
V
CEO
V
EBO
I
C
P
d
R
JA
θ
Tj, T
STG
C
B
M
L
ED
-60 -80 V
-60 -80 V
-4.0 V
-500 mA
200 mW
625
-55 to +150
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α
All Dimensions in mm
SOT-323
0° 8°
°C/W
°C
MMSTA55/MMSTA56
© Diodes Incorporated
P, P
OWER
PATIO
C
O
CTO
R T
O
T
TER
C
C
URRENT
G
T
T
R VOLT
G
@T
Electrical Characteristics
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage MMSTA55
MMSTA56
Collector-Emitter Breakdown Voltage MMSTA55
MMSTA56
Emitter-Base Breakdown Voltage
Collector Cutoff Current MMSTA55
MMSTA56
Collector Cutoff Current MMSTA55
MMSTA56
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Notes: 5. Short duration pulse test used to minimize self-heating effect.
200
150
N (mW)
Characteristic Symbol Min Max Unit Test Condition
= 25°C unless otherwise specified
A
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
h
V
CE(SAT)
V
BE(SAT)
-60
-80
-60
-80
-4.0
⎯
⎯
FE
100
⎯
⎯
f
T
50
⎯
⎯
⎯
-100 nA
-100 nA
⎯ ⎯
-0.25 V
-1.2 V
⎯
V
V
V
MHz
IC = -100μA, IE = 0
IC = -1.0mA, IB = 0
IE = -100μA, IC = 0
VCB = -60V, IE = 0
VCB = -80V, IE = 0
V
= -60V, IBO = 0V
CE
V
= -80V, IBO = 0V
CE
IC = -10mA, VCE = -1.0V
IC = -100mA, V
= -1.0V
CE
IC = -100mA, IB = -10mA
IC = -100mA, VCE = -1.0V
VCE = -1.0V, IC = -100mA,
f = 100MHz
0.25
I
C
= 10
I
B
0.20
EMI
T = 25°C
A
100
DISSI
50
D
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75 100 125
150
175
Fig. 1, Max Power Dissipation vs. Ambient Temperature
1,000
V = 5V
CE
T = 150°C
A
AIN
100
T = 25°C
FE
h, D
A
T = -50°C
A
200
0.15
LLE
0.10
T = 150°C
SATURATION VOLTAGE (V)
CE(SAT)
0.05
V,
0
110
Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current
A
100
I , COLLECTOR CURRENT (mA)
C
T = -50°C
A
1,000
1.0
0.9
V = 5V
CE
E (V)
0.8
A
0.7
0.6
E
0.5
T = -50°C
A
T = 25°C
A
T = 150°C
A
0.4
0.3
BE(ON)
0.2
V , BASE EMI
10
1
10
I , COLLECTOR CURRENT (mA)
C
100
Fig. 3, DC Current Gain vs. Collector Current
1,000
DS30167 Rev. 10 - 2 2 of 3
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0.1
10.1
I , COLLECTOR CURRENT (mA)
C
10 100
Fig. 4 Base Emitter Voltage vs. Collector Current
MMSTA55/MMSTA56
© Diodes Incorporated
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