Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (MMSTA92)
• Ideal for Low Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 3 and 4)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
• Marking Information: K3M, See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.006 grams (approximate)
MMSTA42
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
A
C
BE
G
H
K
J
C
B
SOT-323
Dim Min Max
A 0.25 0.40
C
B
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
M
H 1.80 2.20
J 0.0 0.10
L
ED
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α
All Dimens ons in mm i
0° 8°
E
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
V
V
V
R
Tj, T
CBO
CEO
EBO
I
C
P
d
JA
θ
STG
300 V
300 V
6.0 V
200 mA
200 mW
625
-55 to +150
°C/W
°C
Electrical Characteristics @T
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration pulse test used to minimize self-heating effect.
DS30175 Rev. 10 - 2 1 of 3
= 25°C unless otherwise specified
A
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
V
BE(SAT)
C
cb
f
T
www.diodes.com
300
300
6.0
⎯
⎯
25
40
40
⎯
⎯
⎯
50
⎯
⎯
⎯
V
V
V
100 nA
100 nA
⎯ ⎯
0.5 V
0.9 V
3.0 pF
MHz
⎯
IC = 100μA, IE = 0
IC = 1.0mA, IB = 0
IE = 100μA, IC = 0
VCB = 200V, IE = 0
V
= 6.0V, IC = 0
CE
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 30mA, V
CE
= 10V
IC = 20mA, IB = 2.0mA
IC = 20mA, IB = 2.0mA
VCB = 20V, f = 1.0MHz, IE = 0
VCE = 20V, IC = 10mA,
f = 100MHz
© Diodes Incorporated
MMSTA42
(mW)
DISSI
200
150
100
2.0
I
1.8
C
= 10
I
B
1.6
1.4
EMI
T = 150°C
A
1.2
1.0
LLE
0.8
T = 25°C
A
50
D
10,000
1,000
AIN
100
FE
h, D
10
100
z)
0
0
1
1
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
Fig. 1, Max Power Dissipation vs.
Ambient Temperature
V = 5V
CE
T = 150°C
A
T = -50°C
A
T = 25°C
A
10
I , COLLECTOR CURRENT (mA)
C
Fig. 3, DC Current Gain vs.
Collector Current
V = 5V
CE
100
150
175
200
1,000
0.6
SATURATION VOLTAGE (V)
0.4
CE(SAT)
V,
0.2
0
110
I , COLLECTOR CURRENT (mA)
C
100
T = -50°C
A
1,000
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
1.0
V = 5V
CE
0.9
E (V)
0.8
T = -50°C
A
0.7
0.6
0.5
T = 25°C
A
0.4
0.3
BE(ON)
V , BASE EMI
0.2
T = 150°C
A
0.1
0.1
Fig. 4, Base Emitter Voltage vs. Collector Current
110
I , COLLECTOR CURRENT (mA)
C
100
(M
10
AIN BANDWID
T
f,
1
1
I , COLLECTOR CURRENT (mA)
C
10
Fig. 5, Gain Bandwidth Prod uct vs.
Collector Current
DS30175 Rev. 10 - 2 2 of 3
www.diodes.com
MMSTA42
© Diodes Incorporated