Diodes MMSTA14 User Manual

Features

• Epitaxial Planar Die Construction

• Complementary PNP Type Available

(MMSTA63/MMSTA64)

• Ideal for Low Power Amplification and Switching

• High Current Gain

• Ultra-Small Surface Mount Package

• Lead Free/RoHS Compliant (Note 2)

• "Green" Device (Note 3 and 4)

Mechanical Data

• Case: SOT-323

• Case Material: Molded Plastic, "Green" Molding

Compound, Note 4. UL Flammability Classification
Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminal Connections: See Diagram

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over Alloy

42 leadframe).

• MMSTA13 Marking K2D, K3D, See Page 3

• MMSTA14 Marking K3D, See Page 3

• Ordering & Date Code Information: See Page 3

• Weight: 0.006 grams (approximate)

BE

K

J

B

MMSTA13/MMSTA14

NPN SURFACE MOUNT DARLINGTON TRANSISTOR

A
C

G
H

C

C

B

M

L

ED

E

SOT-323

Dim Min Max

A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α

All Dimensi mm ons in

0° 8°

Maximum Ratings @T

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

DS30165 Rev. 9 - 2 1 of 3

= 25°C unless otherwise specified

A

V

CBO

V

CEO

V

EBO

I

C

P

R

θ

Tj, T

www.diodes.com

d

JA

STG

30 V
30 V

10 V
300 mA
200 mW
625 °C/W

-55 to +150

MMSTA13/MMSTA14

© Diodes Incorporated

°C

P, P

OWER

PATIO

N

C

O

CTO

R T

O

T

TER

D

C

CUR

R

N

T

GAIN

MIT

T

R VOLT

G

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current

V

(BR)CEO

I

CBO

I

EBO

30

⎯
⎯

⎯

V
100 nA
100 nA

IC = 100μA VBE = 0V
VCB = 30V, IE = 0
V

= 10V, IC = 0

EB

ON CHARACTERISTICS (Note 5)

DC Current Gain MMSTA13
MMSTA14
MMSTA13
MMSTA14

Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage

h

V

CE(SAT)

V

BE(SAT)

5,000

10,000

FE

10,000

⎯ ⎯

20,000

⎯
⎯

1.5 V

2.0 V

IC = 10mA, VCE = 5.0V
IC = 10mA, V

CE

= 5.0V
IC = 100mA, VCE = 5.0V
IC = 100mA, V

CE

= 5.0V
IC = 100mA, IB = 100μA
IC = 100mA, VCE = 5.0V

SMALL SIGNAL CHARACTERISTICS

Output Capacitance
Input Capacitance

Current Gain-Bandwidth Product

Note: 5. Short duration pulse test used to minimize self-heating effect.

200

150

(mW)

100

DISSI

50

D

C

obo

C

ibo

f

T

EMI

LLE

CE(SAT)

V,

8.0 Typical pF
15 Typical pF

125

1.10

1.05

1.00

0.95

0.90

0.85

0.80

0.75

0.70

0.65

0.60

SATURATION VOLT AGE (V)

0.55

0.50

I

C

I

B

⎯

= 1000

MHz

T = 25°C

A

T = 150°C

A

VCB = 10V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 5.0V, IC = 10mA,

f = 100MHz

T = -50°C

A

0.45

0

0

25 50

T , AMBIENT TEMPERATURE (°C)

A

75

100 125

150

Fig. 1, Max Power Dissi pation vs. Ambient Te m perature

175

200

1,000,000

100,000

E

10,000

FE

h,

1,000

100

1

Fig. 3, DC Current Gain vs. Collector Current

10 1,000

I , COLLECTOR CURRENT (mA)

C

100

DS30165 Rev. 9 - 2 2 of 3

www.diodes.com

0.40
1

10

I , COLLECTOR CURRENT (mA)

C

100

1,000

Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current

1.6

V = 5V

1.5

1.4

E (V)

1.3

A

1.2

1.1

1.0

E

CE

T = -50°C

A

T = 25°C

A

0.9

0.8

0.7

T = 150°C

A

0.6

0.5

0.4

BE(ON)

V , BASE E

0.3

0.2

0.1

1

I , COLLECTOR CURRENT (mA)

C

10

100

Fig. 4, Base Emitter Voltage vs. Collector Current

MMSTA13/MMSTA14

© Diodes Incorporated

GAIN

N

T

H

P

R

ODUCT

H

1,000

z)
(M

DWID
BA

T

f,

100

10

V = 5V

CE

1

110

I , COLLECTOR CURRENT (mA)

Fig. 5, Gain Bandwidt h P r oduct vs. Colle ctor Curre nt

C

100

Ordering Information (Note 4 & 6)

Device

MMSTA13-7-F
MMSTA14-7-F

Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Packaging Shipping

SOT-323 3000/Tape & Reel
SOT-323 3000/Tape & Reel

Marking Information

Date Code Key

Year 2000 2001 2002 2003 2004

Code L M N P R

Month Jan Feb Mar Apr May Jun Jul

Code 1 2 3 4 5 6 7

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.

KxD

KxD = Product Type Marking Code, e.g., K2D = MMSTA13
YM = Date Code Marking
Y = Year ex: N = 2002

YM

M = Month ex: 9 = September

2005 2006 2007 2008 2009 2010 2011 2012

S T U V W X Y Z

Aug Sep Oct Nov Dec

8 9 O N D

IMPORTANT NOTICE

LIFE SUPPORT

DS30165 Rev. 9 - 2 3 of 3

www.diodes.com

MMSTA13/MMSTA14

© Diodes Incorporated