Diodes MMSTA14 User Manual

Features

• Epitaxial Planar Die Construction

• Complementary PNP Type Available

(MMSTA63/MMSTA64)

• Ideal for Low Power Amplification and Switching

• High Current Gain

• Ultra-Small Surface Mount Package

• Lead Free/RoHS Compliant (Note 2)

• "Green" Device (Note 3 and 4)

Mechanical Data

• Case: SOT-323

• Case Material: Molded Plastic, "Green" Molding

Compound, Note 4. UL Flammability Classification
Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminal Connections: See Diagram

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over Alloy

42 leadframe).

• MMSTA13 Marking K2D, K3D, See Page 3

• MMSTA14 Marking K3D, See Page 3

• Ordering & Date Code Information: See Page 3

• Weight: 0.006 grams (approximate)

BE

K

J

B

MMSTA13/MMSTA14

NPN SURFACE MOUNT DARLINGTON TRANSISTOR

A
C

G
H

C

C

B

M

L

ED

E

SOT-323

Dim Min Max

A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α

All Dimensi mm ons in

0° 8°

Maximum Ratings @T

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

DS30165 Rev. 9 - 2 1 of 3

= 25°C unless otherwise specified

A

V

CBO

V

CEO

V

EBO

I

C

P

R

θ

Tj, T

www.diodes.com

d

JA

STG

30 V
30 V

10 V
300 mA
200 mW
625 °C/W

-55 to +150

MMSTA13/MMSTA14

© Diodes Incorporated

°C

P, P

OWER

PATIO

N

C

O

CTO

R T

O

T

TER

D

C

CUR

R

N

T

GAIN

MIT

T

R VOLT

G

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current

V

(BR)CEO

I

CBO

I

EBO

30

⎯
⎯

⎯

V
100 nA
100 nA

IC = 100μA VBE = 0V
VCB = 30V, IE = 0
V

= 10V, IC = 0

EB

ON CHARACTERISTICS (Note 5)

DC Current Gain MMSTA13
MMSTA14
MMSTA13
MMSTA14

Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage

h

V

CE(SAT)

V

BE(SAT)

5,000

10,000

FE

10,000

⎯ ⎯

20,000

⎯
⎯

1.5 V

2.0 V

IC = 10mA, VCE = 5.0V
IC = 10mA, V

CE

= 5.0V
IC = 100mA, VCE = 5.0V
IC = 100mA, V

CE

= 5.0V
IC = 100mA, IB = 100μA
IC = 100mA, VCE = 5.0V

SMALL SIGNAL CHARACTERISTICS

Output Capacitance
Input Capacitance

Current Gain-Bandwidth Product

Note: 5. Short duration pulse test used to minimize self-heating effect.

200

150

(mW)

100

DISSI

50

D

C

obo

C

ibo

f

T

EMI

LLE

CE(SAT)

V,

8.0 Typical pF
15 Typical pF

125

1.10

1.05

1.00

0.95

0.90

0.85

0.80

0.75

0.70

0.65

0.60

SATURATION VOLT AGE (V)

0.55

0.50

I

C

I

B

⎯

= 1000

MHz

T = 25°C

A

T = 150°C

A

VCB = 10V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 5.0V, IC = 10mA,

f = 100MHz

T = -50°C

A

0.45

0

0

25 50

T , AMBIENT TEMPERATURE (°C)

A

75

100 125

150

Fig. 1, Max Power Dissi pation vs. Ambient Te m perature

175

200

1,000,000

100,000

E

10,000

FE

h,

1,000

100

1

Fig. 3, DC Current Gain vs. Collector Current

10 1,000

I , COLLECTOR CURRENT (mA)

C

100

DS30165 Rev. 9 - 2 2 of 3

www.diodes.com

0.40
1

10

I , COLLECTOR CURRENT (mA)

C

100

1,000

Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current

1.6

V = 5V

1.5

1.4

E (V)

1.3

A

1.2

1.1

1.0

E

CE

T = -50°C

A

T = 25°C

A

0.9

0.8

0.7

T = 150°C

A

0.6

0.5

0.4

BE(ON)

V , BASE E

0.3

0.2

0.1

1

I , COLLECTOR CURRENT (mA)

C

10

100

Fig. 4, Base Emitter Voltage vs. Collector Current

MMSTA13/MMSTA14

© Diodes Incorporated