DIODES MMSTA13, MMSTA14 Datasheet
Features
Epitaxial Planar Die Construction
·
Complementary PNP Type Available
·
(MMSTA63/MMSTA64)
Ideal for Medium Power Amplification and
·
Switching
High Current Gain
·
Ultra-Small Surface Mount Package
·
Mechanical Data
Case: SOT-323, Molded Plastic
·
NEW PRODUCT
Terminals: Solderable per MIL-STD-202,
·
Method 208
Terminal Connections: See Diagram
·
MMSTA13 Marking K2D, K3D
·
· MMSTA14 Marking K3D
· Weight: 0.006 grams (approx.)
MMSTA13/MMSTA14
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
SOT-323
Dim Min Max
A
B
C
D
E
G
H
M
J
K
L
M
All Dimensions in mm
0.30 0.40
1.15 1.35
2.00 2.20
0.65 Nominal
0.30 0.40
1.20 1.40
1.80 2.20
0.0 0.10
0.90 1.00
0.25 0.40
0.10 0.25
E
TOP VIEW
B
A
C
B
C
E
D
G
H
K
J
L
Maximum Ratings
Characteristic Symbol MMSTA13 MMSTA14 Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Electrical Characteristics
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain MMSTA13
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
@ TA= 25°C unless otherwise specified
@ TA= 25°C unless otherwise specified
MMSTA14
MMSTA13
MMSTA14
V
(BR)CEO
I
CBO
I
EBO
h
V
CE(SAT)
V
BE(SAT)
C
C
f
T
FE
obo
ibo
T
V
CBO
V
CEO
V
EBO
I
C
P
d
R
qJA
j,TSTG
30 ¾ V
¾ 100 nA
¾ 100 nA
5,000
10,000
10,000
20,000
¾ 1.5 V
¾ 2.0 V
8.0 Typical pF
15 Typical pF
125 ¾ MHz
30 V
30 V
10 V
300 mA
200
625 K/W
-55 to +150 °C
= 100mAVBE= 0V
I
C
= 30V, IE= 0
V
CB
= 10V, IC= 0
V
EB
= 10mA, VCE= 5.0V
I
C
I
= 10mA, VCE= 5.0V
¾¾
C
I
= 100mA, VCE= 5.0V
C
I
= 100mA, VCE= 5.0V
C
= 100mA, IB= 100mA
I
C
= 100mA, VCE= 5.0V
I
C
= 10V, f = 1.0MHz, IE= 0
V
CB
= 0.5V, f = 1.0MHz, IC= 0
V
EB
= 5.0V, IC= 10mA,
V
CE
f = 100MHz
mW
Notes: 1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
DS30165 Rev. B-1 1 of 1 MMSTA13/MMSTA14
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