Page 1
MMSTA05/MMSTA06
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available
(MMSTA55/MMSTA56)
• Ideal for Medium Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Notes 3 and 4)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• MMSTA05 Marking K1H, K1G (See Page 3)
• MMSTA06 Marking K1G (See Page 3)
• Order & Date Code Information: See Page 3
• Weight: 0.006 grams (approximate)
Maximum Ratings @T
Characteristic Symbol MMSTA05 MMSTA06 Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
= 25°C unless otherwise specified
A
BE
K
J
C
B
V
V
V
R
Tj, T
A
C
G
H
CBO
CEO
EBO
I
C
P
d
JA
θ
STG
C
B
M
L
ED
E
60 80 V
60 80 V
4.0 V
500 mA
200 mW
625
-55 to +150
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α
0° 8°
All Dimensions in mm
°C/W
°C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage MMSTA05
MMSTA06
Collector-Emitter Breakdown Voltage MMSTA05
MMSTA06
Emitter-Base Breakdown Voltage
Collector Cutoff Current MMSTA05
MMSTA06
Collector Cutoff Current MMSTA05
MMSTA06
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CES
60
80
60
80
4.0
⎯
⎯
⎯
⎯
⎯
V
V
V
100 nA
100 nA
IC = 100μA, IE = 0
IC = 1.0mA, IB = 0
IE = 100μA, IC = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
V
= 60V, IBO = 0V
CE
V
= 80V, IBO = 0V
CE
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
h
V
CE(SAT)
V
BE(SAT)
FE
100
⎯
⎯
⎯ ⎯
0.25 V
1.2 V
IC = 10mA, VCE = 1.0V
IC = 100mA, V
CE
= 1.0V
IC = 100mA, IB = 10mA
IC = 100mA, VCE = 1.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration pulse test used to minimize self-heating effect.
f
T
DS30168 Rev. 9 - 2 1 of 3
www.diodes.com
100
⎯
MHz
VCE = 2.0V, IC = 10mA, f = 100MHz
MMSTA05/MMSTA06
© Diodes Incorporated
Page 2
P, P
OWER
P
TIO
C
O
CTO
R
T
TER VOLTAG
C
O
CTO
R T
O
T
TER
C
CUR
R
T
G
M
T
T
R
O
T
G
200
150
N (mW)
A
100
DISSI
50
D
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
75 100 125
A
150
Fig. 1, Max Power Dissipation vs. Ambient Temperature
2.0
1.8
E (V)
1.6
1.4
I = 30mA
1.2
I = 10mA
1.0
EMI
C
C
0.8
LLE
V,
CE
0.6
0.4
0.2
I = 1mA
C
I = 100mA
C
0
0.001 0.01
0.1
I , BASE CURRENT (mA)
B
1
Fig. 3 Typical Collector Saturation Region
10,000
1,000
AIN
EN
100
FE
h, D
10
200
175
10 100
10
1
0.1
CBO
I , COLLECTOR-BASE CURRENT (nA)
0.01
25 50 75 100 125
T , AMBIENT TEMPERATURE (ºC)
A
Fig. 2 Typical Collector-Cutoff Current vs. Ambient Temperature
0.500
I
0.450
C
= 10
I
B
0.400
0.350
EMI
0.300
T = 25°C
A
0.250
T = 150°C
0.200
LLE
A
0.150
SATURATION VOLTAGE (V)
0.100
CE(SAT)
V,
0.050
0
1
10
I , COLLECTOR CURRENT (mA)
C
100
T = -50°C
A
Fig. 4 Collector Emitter Saturation Voltage vs. Collector Current
1.0
V = 5V
0.9
CE
E (V)
0.8
A
L
0.7
V
E
0.6
I
0.5
0.4
0.3
BE(ON)
V , BASE E
0.2
1,000
1
1
Fig. 5, DC Current Gain vs. Collector Current
10
I , COLLECTOR CURRENT (mA)
C
100
1,000
DS30168 Rev. 9 - 2 2 of 3
www.diodes.com
0.1
0.1 1 10 100
I , COLLECTOR CURRENT (mA)
C
Fig. 6, Base Emitter Voltage vs. Collector Current
MMSTA05/MMSTA06
© Diodes Incorporated
Page 3
G
T
H PRODUCT
H
1,000
z)
(M
100
10
AIN BANDWID
T
f,
1
1
Fig. 7, Gain Bandwidth Product vs Collector Current
I , COLLECTOR CURRENT (mA)
C
10
Ordering Information (Note 4 and 6)
Device Packaging Shipping
MMSTA05-7-F SOT-323 3000/Tape & Reel
MMSTA06-7-F SOT-323 3000/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004
Code J K L M N P R
Month Jan Feb Mar Apr May Jun Jul
Code 1 2 3 4 5 6 7
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
K1x
YM
IMPORTANT NOTICE
LIFE SUPPORT
K1x = Product Type Marking Code, ex: K1H = MMSTA05
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
2005 2006 2007 2008 2009 2010 2011 2012
S T U V W X Y Z
Aug Sep Oct Nov Dec
8 9 O N D
DS30168 Rev. 9 - 2 3 of 3
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MMSTA05/MMSTA06
© Diodes Incorporated
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