Diodes MMSTA06 User Manual
MMSTA05/MMSTA06
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available
(MMSTA55/MMSTA56)
• Ideal for Medium Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Notes 3 and 4)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• MMSTA05 Marking K1H, K1G (See Page 3)
• MMSTA06 Marking K1G (See Page 3)
• Order & Date Code Information: See Page 3
• Weight: 0.006 grams (approximate)
Maximum Ratings @T
Characteristic Symbol MMSTA05 MMSTA06 Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
= 25°C unless otherwise specified
A
BE
K
J
C
B
V
V
V
R
Tj, T
A
C
G
H
CBO
CEO
EBO
I
C
P
d
JA
θ
STG
C
B
M
L
ED
E
60 80 V
60 80 V
4.0 V
500 mA
200 mW
625
-55 to +150
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α
0° 8°
All Dimensions in mm
°C/W
°C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage MMSTA05
MMSTA06
Collector-Emitter Breakdown Voltage MMSTA05
MMSTA06
Emitter-Base Breakdown Voltage
Collector Cutoff Current MMSTA05
MMSTA06
Collector Cutoff Current MMSTA05
MMSTA06
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CES
60
80
60
80
4.0
⎯
⎯
⎯
⎯
⎯
V
V
V
100 nA
100 nA
IC = 100μA, IE = 0
IC = 1.0mA, IB = 0
IE = 100μA, IC = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
V
= 60V, IBO = 0V
CE
V
= 80V, IBO = 0V
CE
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
h
V
CE(SAT)
V
BE(SAT)
FE
100
⎯
⎯
⎯ ⎯
0.25 V
1.2 V
IC = 10mA, VCE = 1.0V
IC = 100mA, V
CE
= 1.0V
IC = 100mA, IB = 10mA
IC = 100mA, VCE = 1.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration pulse test used to minimize self-heating effect.
f
T
DS30168 Rev. 9 - 2 1 of 3
www.diodes.com
100
⎯
MHz
VCE = 2.0V, IC = 10mA, f = 100MHz
MMSTA05/MMSTA06
© Diodes Incorporated
P, P
OWER
P
TIO
C
O
CTO
R
T
TER VOLTAG
C
O
CTO
R T
O
T
TER
C
CUR
R
T
G
M
T
T
R
O
T
G
200
150
N (mW)
A
100
DISSI
50
D
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
75 100 125
A
150
Fig. 1, Max Power Dissipation vs. Ambient Temperature
2.0
1.8
E (V)
1.6
1.4
I = 30mA
1.2
I = 10mA
1.0
EMI
C
C
0.8
LLE
V,
CE
0.6
0.4
0.2
I = 1mA
C
I = 100mA
C
0
0.001 0.01
0.1
I , BASE CURRENT (mA)
B
1
Fig. 3 Typical Collector Saturation Region
10,000
1,000
AIN
EN
100
FE
h, D
10
200
175
10 100
10
1
0.1
CBO
I , COLLECTOR-BASE CURRENT (nA)
0.01
25 50 75 100 125
T , AMBIENT TEMPERATURE (ºC)
A
Fig. 2 Typical Collector-Cutoff Current vs. Ambient Temperature
0.500
I
0.450
C
= 10
I
B
0.400
0.350
EMI
0.300
T = 25°C
A
0.250
T = 150°C
0.200
LLE
A
0.150
SATURATION VOLTAGE (V)
0.100
CE(SAT)
V,
0.050
0
1
10
I , COLLECTOR CURRENT (mA)
C
100
T = -50°C
A
Fig. 4 Collector Emitter Saturation Voltage vs. Collector Current
1.0
V = 5V
0.9
CE
E (V)
0.8
A
L
0.7
V
E
0.6
I
0.5
0.4
0.3
BE(ON)
V , BASE E
0.2
1,000
1
1
Fig. 5, DC Current Gain vs. Collector Current
10
I , COLLECTOR CURRENT (mA)
C
100
1,000
DS30168 Rev. 9 - 2 2 of 3
www.diodes.com
0.1
0.1 1 10 100
I , COLLECTOR CURRENT (mA)
C
Fig. 6, Base Emitter Voltage vs. Collector Current
MMSTA05/MMSTA06
© Diodes Incorporated
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