DIODES MMST5551 Datasheet
Features
Epitaxial Planar Die Construction
·
Complementary PNP Type Available
·
(MMST5401)
Ideal for Medium Power Amplification and
·
Switching
Ultra-Small Surface Mount Package
·
Mechanical Data
Case: SOT-323, Molded Plastic
·
Terminals: Solderable per MIL-STD-202,
·
NEW PRODUCT
Method 208
Terminal Connections: See Diagram
·
Marking: K4N
·
Weight: 0.006 grams (approx.)
·
MMST5551
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
SOT-323
Dim Min Max
A
B
C
D
E
G
H
M
J
K
L
M
All Dimensions in mm
0.30 0.40
1.15 1.35
2.00 2.20
0.65 Nominal
0.30 0.40
1.20 1.40
1.80 2.20
0.0 0.10
0.90 1.00
0.25 0.40
0.10 0.25
E
TOP VIEW
B
A
C
B
C
E
D
G
H
K
J
L
Maximum Ratings
Characteristic Symbol MMST5551 Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Notes: 1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
@ TA= 25°C unless otherwise specified
V
V
V
R
T
j,TSTG
CBO
CEO
EBO
I
C
P
d
qJA
180 V
160 V
6.0 V
200 mA
200
625 K/W
-55 to +150 °C
mW
DS30173 Rev. B-1 1 of 2 MMST5551
Electrical Characteristics
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
NEW PRODUCT
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
@ TA= 25°C unless otherwise specified
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
V
CE(SAT)
V
BE(SAT)
C
h
f
FE
obo
fe
T
180 ¾ V
160 ¾ V
6.0 ¾ V
¾ 50
¾ 50 nA
80
80
30
¾
¾ 1.0 V
¾ 6.0 pF
50 250 ¾
100 300 MHz
NF ¾ 8.0 dB
¾
250
¾
0.15
0.20
nA
mA
¾
V
= 100mA, IE= 0
I
C
= 1.0mA, IB= 0
I
C
I
= 10mA, IC= 0
E
= 120V, IE= 0
V
CB
V
= 120V, IE= 0, TA= 100°C
CB
V
= 4.0V, IC= 0
EB
= 1.0mA, VCE= 5.0V
I
C
I
= 10mA, VCE= 5.0V
C
I
= 50mA, VCE= 5.0V
C
= 10mA, IB= 1.0mA
I
C
I
= 50mA, IB= 5.0mA
C
= 10mA, IB= 1.0mA
I
C
I
= 50mA, IB= 5.0mA
C
= 10V, f = 1.0MHz, IE= 0
V
CB
= 10V, IC= 1.0mA,
V
CE
f = 1.0kHz
= 10V, IC= 10mA,
V
CE
f = 100MHz
= 5.0V, IC= 200mA,
V
CE
R
= 1.0kW, f = 1.0kHz
S
Notes: 1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
DS30173 Rev. B-1 2 of 2 MMST5551
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