Diodes MMST5551 User Manual
MMST5551
180V NPN SMALL SIGNAL TRANSISTOR IN SOT323
Features
• Epitaxial Planar Die Construction
• Ultra-Small Surface Mount Package
• Complementary NPN Type: MMST5401
• Ideal for Low Power Amplification and Switching
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)
SOT323
Mechanical Data
• Case: SOT323
• Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
• Weight: 0.006 grams (approximate)
C
B
Top View
E
Device Symbol
Top View
Pin-Out
Ordering Information (Notes 4 & 5)
Device
MMST5551-7-F
MMST5551Q-7-F
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
and Lead-free.
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per reel
AEC-Q101 K4N 7 8 3,000
Automotive K4N 7 8 3,000
Marking Information
Date Code Key
xxx
K4N
Year 2010 2011 2012 2013 2014 2015 2016 2017
Code X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
YM
K4N = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: A = 2013)
M or M = Month (ex: 9 = September)
MMST5551
Document number: DS30173 Rev. 9 - 2
1 of 4
www.diodes.com
May 2014
© Diodes Incorporated
V
V
V
MMST5551
Absolute Maximum Ratings (@T
Characteristic Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
= +25°C, unless otherwise specified.)
A
V
CBO
V
CEO
V
EBO
IC
alue Unit
180 V
160 V
6.0 V
200 mA
Thermal Characteristics (@T
Characteristic Symbol
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
= +25°C, unless otherwise specified.)
A
T
P
D
R
θJA
J,TSTG
alue Unit
200 mW
625
-55 to +150
°C/W
°C
ESD Ratings (Note 7)
Characteristic Symbol
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
V
V
I
CBO
I
EBO
CBO
CEO
EBO
180 — V
160 — V
6.0 — V
— 50
— 50 nA
ON CHARACTERISTICS (Note 8)
80
DC Current Gain
hFE
80
250
30
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
CE(SAT)
V
BE(SAT)
—
— 1.0 V
0.15
0.20
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
C
obo
hfe
fT
— 6.0 pF
50 250 —
100 300 MHz
Noise Figure NF — 8.0 dB
Notes: 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
MMST5551
Document number: DS30173 Rev. 9 - 2
conditions whilst operating in a steady-state.
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
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www.diodes.com
alue Unit JEDEC Class
IC = 100µA, IE = 0
IC = 1.0mA, IB = 0
IE = 10µA, IC = 0
VCB = 120V, IE = 0
nA
µA
VCB = 120V, IE = 0, TA = +100°C
VEB = 4.0V, IC = 0
—
—
IC = 1.0mA , VCE = 5.0V
—
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
IC = 10mA, IB = 1.0mA
V
IC = 50mA, IB = 5.0mA
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
VCB = -10V, f = 1.0MHz, IE = 0
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
VCE = 10V, IC = 10mA,
f = 100MHz
VCE = 5.0V, IC = 200µA,
RS =1.0Ω, f = 1.0kHz
May 2014
© Diodes Incorporated
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