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MMST5551
180V NPN SMALL SIGNAL TRANSISTOR IN SOT323
Features
• Epitaxial Planar Die Construction
• Ultra-Small Surface Mount Package
• Complementary NPN Type: MMST5401
• Ideal for Low Power Amplification and Switching
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)
SOT323
Mechanical Data
• Case: SOT323
• Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
• Weight: 0.006 grams (approximate)
C
B
Top View
E
Device Symbol
Top View
Pin-Out
Ordering Information (Notes 4 & 5)
Device
MMST5551-7-F
MMST5551Q-7-F
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
and Lead-free.
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per reel
AEC-Q101 K4N 7 8 3,000
Automotive K4N 7 8 3,000
Marking Information
Date Code Key
xxx
K4N
Year 2010 2011 2012 2013 2014 2015 2016 2017
Code X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
YM
K4N = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: A = 2013)
M or M = Month (ex: 9 = September)
MMST5551
Document number: DS30173 Rev. 9 - 2
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May 2014
© Diodes Incorporated
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V
V
V
MMST5551
Absolute Maximum Ratings (@T
Characteristic Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
= +25°C, unless otherwise specified.)
A
V
CBO
V
CEO
V
EBO
IC
alue Unit
180 V
160 V
6.0 V
200 mA
Thermal Characteristics (@T
Characteristic Symbol
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
= +25°C, unless otherwise specified.)
A
T
P
D
R
θJA
J,TSTG
alue Unit
200 mW
625
-55 to +150
°C/W
°C
ESD Ratings (Note 7)
Characteristic Symbol
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
V
V
I
CBO
I
EBO
CBO
CEO
EBO
180 — V
160 — V
6.0 — V
— 50
— 50 nA
ON CHARACTERISTICS (Note 8)
80
DC Current Gain
hFE
80
250
30
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
CE(SAT)
V
BE(SAT)
—
— 1.0 V
0.15
0.20
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
C
obo
hfe
fT
— 6.0 pF
50 250 —
100 300 MHz
Noise Figure NF — 8.0 dB
Notes: 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
MMST5551
Document number: DS30173 Rev. 9 - 2
conditions whilst operating in a steady-state.
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
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alue Unit JEDEC Class
IC = 100µA, IE = 0
IC = 1.0mA, IB = 0
IE = 10µA, IC = 0
VCB = 120V, IE = 0
nA
µA
VCB = 120V, IE = 0, TA = +100°C
VEB = 4.0V, IC = 0
—
—
IC = 1.0mA , VCE = 5.0V
—
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
IC = 10mA, IB = 1.0mA
V
IC = 50mA, IB = 5.0mA
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
VCB = -10V, f = 1.0MHz, IE = 0
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
VCE = 10V, IC = 10mA,
f = 100MHz
VCE = 5.0V, IC = 200µA,
RS =1.0Ω, f = 1.0kHz
May 2014
© Diodes Incorporated
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P, P
OWE
R
S
S
PATIO
C
O
CTO
R T
O EM
T
T
R
C CURRENT
A
A
S
E E
MITTE
R
T
A
E
G
A
A
PRODUC
M
Typical Electrical Characteristics (@T
200
150
N (mW)
I
100
DI
50
D
1,000
IN
G
100
FE
h, D
10
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
75 100 125
A
Fig. 1, Max Power Dissipation vs.
Ambient Temperature
V = 5V
CE
T = 150°C
A
T = 25°C
A
T = -50°C
A
150
Note 1
175
= +25°C, unless otherwise specified.)
A
0.15
0.14
0.13
E
0.12
I
0.11
0.10
0.09
LLE
0.08
0.07
SATURATION VOLTAGE (V)
0.06
CE(SAT)
V,
0.05
200
0.04
1
1.0
0.9
(V)
G
0.8
0.7
VOL
0.6
0.5
0.4
BE(ON)
0.3
V, B
MMST5551
I
C
= 10
I
B
T = 150°C
A
T = 25°C
A
T = -50°C
A
10 100
I , COLLECTOR CURRENT (mA)
C
Fig. 2, Collector Emitter S aturation Voltage
vs. Collector Current
1,000
0.2
0.1 1 10
I , COLLECTOR CURRENT (mA)
C
Fig. 4, Base Emitter Voltage
vs. Collector Current
100
1,000
1
1
I , COLLECTOR CURRENT (mA)
C
10
100
Fig. 3, DC Current Gain vs.
Collector Current
Hz)
T (
100
NDWIDTH
10
IN B
T
f,
1
1
I , COLLECTOR CURRENT (mA)
C
10 100
Fig. 5, Gain Bandwidth Product vs.
Collector Current
MMST5551
Document number: DS30173 Rev. 9 - 2
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MMST5551
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
K
J
A
Dim Min Max Typ
A 0.25 0.40 0.30
C
B
G
H
M
D
L
B 1.15 1.35 1.30
C 2.00 2.20 2.10
D - - 0.65
G 1.20 1.40 1.30
H 1.80 2.20 2.15
K 0.90 1.00 1.00
M 0.10 0.18 0.11
SOT323
J 0.0 0.10 0.05
L 0.25 0.40 0.30
0° 8° -
α
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between
device Terminals and PCB tracking.
Y
Z
X
E
C
Dimensions Value (in mm)
Z 2.8
X 0.7
Y 0.9
C 1.9
E 1.0
MMST5551
Document number: DS30173 Rev. 9 - 2
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
MMST5551
MMST5551
Document number: DS30173 Rev. 9 - 2
5 of 4
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May 2014
© Diodes Incorporated
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