Diodes MMST5401 User Manual

C

Features

• Epitaxial Planar Die Construction

• Ultra-Small Surface Mount Package

• Complementary PNP Type: MMST5551

• Ideal for Low Power Amplification and Switching

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

• PPAP Capable (Note 4)

SOT323

Top View

Ordering Information (Notes 4 & 5)

B

Device Symbol

MMST5401

160V PNP SMALL SIGNAL TRANSISTOR IN SOT323

Mechanical Data

• Case: SOT323

• Case Material: Molded Plastic. “Green” Molding Compound.

UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

• Weight: 0.006 grams (approximate)

E

e3

Top View

Pin-Out

Device

MMST5401-7-F

MMST5401-13-F

MMST5401Q-7-F

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per reel

AEC-Q101 K4M 7 8 3,000

AEC-Q101 K4M 13 8 10,000

Automotive K4M 7 8 3,000

Marking Information

Date Code Key

xxx

Year 2010 2011 2012 2013 2014 2015 2016 2017

Code X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

YM

K4M = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: A = 2013)
M or M = Month (ex: 9 = September)

MMST5401

Document number: DS30170 Rev. 10 - 2

1 of 4

www.diodes.com

May 2014

© Diodes Incorporated

V

V

V

Absolute Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol

Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Operating and Storage Temperature Range

ESD Ratings (Note 7)

R

T

J,TSTG

MMST5401

alue Unit

V

CBO

V

CEO

V

EBO

IC

P

D

θJA

-160 V

-150 V

-5.0 V

-200 mA

alue Unit

200 mW

625

-55 to +150

°C/W

°C

Characteristic Symbol

alue Unit JEDEC Class

Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

V

V

V

I

CBO

I

EBO

CBO

CEO

EBO

-160

-150

-5.0

⎯

⎯

⎯

⎯

⎯

-50

-50 nA

V

IC = -100μA, IE = 0

V

IC = -1.0mA, IB = 0

V

IE = -10μA, IC = 0

VCB = -120V, IE = 0

nA
µA

VCB = -120V, IE = 0, TA = +100°C

VEB = -3.0V, IC = 0

ON CHARACTERISTICS (Note 8)

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

hFE

V

CE(SAT)

V

BE(SAT)

50
60
50

⎯

⎯

⎯

240

⎯

-0.2

-0.5

-1.0 V

IC = -1.0mA , VCE = -5.0V
IC = -10mA, VCE = -5.0V

⎯

IC = -50mA, VCE = -5.0V

IC = -10mA, IB = -1.0mA

V

IC = -50mA, IB = -5.0mA
IC = -10mA, IB = -1.0mA

IC = -50mA, IB = -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance

Small Signal Current Gain

Current Gain-Bandwidth Product

C

obo

hfe

fT

Noise Figure NF

Notes: 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air

8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

conditions whilst operating in a steady-state.

7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

⎯

40 200

100 300 MHz

⎯

6.0 pF

⎯

8.0 dB

VCB = -10V, f = 1.0MHz, IE = 0

VCE = -10V, IC = -1.0mA,

f = 1.0kHz

VCE = -10V, IC = -10mA,

f = 100MHz

VCE = -5.0V, IC = -200µA,

RS =10Ω, f = 1.0kHz

MMST5401

Document number: DS30170 Rev. 10 - 2

2 of 4

www.diodes.com

May 2014

© Diodes Incorporated