Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous (Note 4)
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Operating and Storage Temperature Range
Notes: 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch;
Electrical Characteristics@T
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwith Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes: 5. Short duration pulse test used to minimize self-heating effect
MMST4403
Datasheet number: DS30083 Rev. 8 - 2
= 25°C unless otherwise specified
A
= 25°C unless otherwise specified
A
(BR)CBO
(BR)CEO
(BR)EBO
I
⎯
CEX
V
V
V
IBL
hFE
V
CE(SAT)
V
BE(SAT)
⎯
Cob
Ceb ⎯
hie
hre
hfe
hoe
fT
td
tr ⎯
ts
tr ⎯
2 of 5
www.diodes.com
V
CBO
V
CEO
V
EBO
IC
Pd
R
JA
θ
Tj, T
STG
-40
-40
-5.0
⎯
⎯
⎯
-100 nA
⎯
30
60
100
100
20
-100 nA
⎯
⎯
⎯
300
⎯
-0.40
-0.75
-0.75
⎯
⎯
-0.95
-1.30
8.5 pF
30 pF
1.5 15
0.1 8.0 x 10-4
60 500
1.0 100
200
⎯
⎯
15 ns
20 ns
⎯
225 ns
30 ns
-40 V
-40 V
-5.0 V
-600 mA
200 mW
625 K/W
-55 to +150
V
IC = -100μA, IE = 0
V
IC = -1.0mA, IB = 0
V
IE = -100μA, IC = 0
VCE = -35V, V
VCE = -35V, V
EB(OFF)
EB(OFF)
IC = -100μA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
⎯
IC = -150mA, VCE = -2.0V
IC = -500mA, VCE = -2.0V
IC = -150mA, IB = -15mA
V
IC = -500mA, IB = -50mA
IC = -150mA, IB = -15mA
V
IC = -500mA, IB = -50mA
VCB = -10V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
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