Diodes MMST4403 User Manual

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Features

• Epitaxial Planar Die Construction

• Complementary NPN Type Available (MMST4401)

• Ultra-Small Surface Mount Package

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

SOT-323

MMST4403

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Mechanical Data

• Case: SOT-323

• Case Material: Molded Plastic, "Green" Molding Compound,

Note 4. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over

Alloy 42 leadframe).

• Weight: 0.006 grams (approximate)

Top view

Device symbol

Pinout – top view

Ordering Information (Note 3)

Device

MMST4403-7-F

Notes: 1. No purposefully added lead.

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com

Packaging Shipping

SOT-323 3000/Tape & Reel

Marking Information

Date Code Key

K3T

Year 2010 2011 2012 2013 2014 2015 2016 2017

Code X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

K3T = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002

YM

M = Month ex: 9 = Se

tembe

MMST4403
Datasheet number: DS30083 Rev. 8 - 2

1 of 5

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June 2011

© Diodes Incorporated

MMST4403

Maximum Ratings @T

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous (Note 4)
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Operating and Storage Temperature Range

Notes: 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch;

Electrical Characteristics @T

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)

DC Current Gain

Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance

Current Gain-Bandwith Product

SWITCHING CHARACTERISTICS

Delay Time
Rise Time
Storage Time
Fall Time

Notes: 5. Short duration pulse test used to minimize self-heating effect

MMST4403
Datasheet number: DS30083 Rev. 8 - 2

= 25°C unless otherwise specified

A

= 25°C unless otherwise specified

A

(BR)CBO

(BR)CEO

(BR)EBO

I

⎯

CEX

V
V
V

IBL

hFE

V

CE(SAT)

V

BE(SAT)

⎯

Cob
Ceb ⎯

hie

hre

hfe

hoe

fT

td
tr ⎯
ts
tr ⎯

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V

CBO

V

CEO

V

EBO

IC
Pd

R

JA

θ

Tj, T

STG

-40

-40

-5.0

⎯
⎯
⎯

-100 nA

⎯

30

60
100
100

20

-100 nA

⎯
⎯
⎯

300

⎯

-0.40

-0.75

-0.75

⎯

⎯

-0.95

-1.30

8.5 pF
30 pF

1.5 15

0.1 8.0 x 10-4
60 500

1.0 100

200

⎯

⎯

15 ns
20 ns

⎯

225 ns

30 ns

-40 V

-40 V

-5.0 V

-600 mA
200 mW
625 K/W

-55 to +150

V

IC = -100μA, IE = 0

V

IC = -1.0mA, IB = 0

V

IE = -100μA, IC = 0
VCE = -35V, V
VCE = -35V, V

EB(OFF)

EB(OFF)

IC = -100μA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V

⎯

IC = -150mA, VCE = -2.0V
IC = -500mA, VCE = -2.0V

IC = -150mA, IB = -15mA

V

IC = -500mA, IB = -50mA
IC = -150mA, IB = -15mA

V

IC = -500mA, IB = -50mA

VCB = -10V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0

kΩ

VCE = -10V, IC = -1.0mA,
f = 1.0MHz

⎯

μS

VCE = -10V, IC = -20mA,

MHz

f = 100MHz

VCE = -30V, IC = -150mA,
V

= -2.0V, IB1 = -15mA

BE(OFF)

VCE = -30V, IC = -150mA,
IB1 = IB2 = -15mA

°C

= -0.4V
= -0.4V

June 2011

© Diodes Incorporated