Diodes MMST4401 User Manual
Features
• Epitaxial Planar Die Construction
• Complementary PNP T
ype Available (MMST4403)
• Ultra-Small Surface Mount Package
• Lead Free/R
• "Green" De
oHS Compliant (Note 2)
vice (Note 3 and 4)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "G
Note 4. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-
• Terminals: Solderable per MIL-ST
• Terminal Connections: See Diagram
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Marking Information: K3X - See Page 4
• Ordering & Date
Code Information: See Page 4
• Weight: 0.006 grams (approx
reen" Molding Compound,
STD-020C
D-202, Method 208
imate)
MMST4401
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
K
J
A
C
B
BE
G
H
ED
C
B
E
C
M
L
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α
All Dimensions in mm
0° 8°
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and new
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
.diodes.com/datasheets/ap02001.pdf.
V
CBO
V
CEO
V
EBO
I
C
P
d
R
JA
θ
Tj, T
STG
er are built with Green Molding Compound. Product manufactured prior to Date
60 V
40 V
6.0 V
600 mA
200 mW
625
-55 to +150
°C/W
°C
DS30084 Rev. 9 - 2 1 of 4
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MMST4401
© Diodes Incorporated
P, P
OWER
PATIO
C
C
U
R
RENT
G
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwith Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
5. Short duration pulse test used to minimize self-heating effect.
400
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
h
V
CE(SAT)
V
BE(SAT)
C
C
h
h
h
h
60
40
6.0
⎯
BL
⎯
20
40
FE
80
100
40
⎯
0.75
⎯
ob
eb
ie
re
fe
oe
f
T
t
d
t
r
t
s
t
r
⎯
⎯
1.0 15
0.1 8.0 x 10
40 500
1.0 30
250
⎯
⎯
⎯
⎯
⎯
⎯
⎯
100 nA
100 nA
⎯
⎯
⎯
300
⎯
0.40
0.75
0.95
1.2
8.5 pF
30 pF
⎯
15 ns
20 ns
225 ns
30 ns
V
= 100μA, IE = 0
I
C
V
IC = 1.0mA, IB = 0
V
IE = 100μA, IC = 0
VCE = 35V, V
VCE = 35V, V
EB(OFF)
EB(OFF)
IC = 100μA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
⎯
IC = 10mA, VCE = 1.0V
IC = 150mA, VCE = 1.0V
IC = 500mA, VCE = 2.0V
IC = 150mA, IB = 15mA
V
IC = 500mA, IB = 50mA
IC = 150mA, IB = 15mA
V
IC = 500mA, IB = 50mA
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
kΩ
-4
VCE = 10V, IC = 1.0mA,
f = 1.0MHz
⎯
μS
VCE = 10V, IC = 20mA,
MHz
f = 100MHz
VCC = 30V, IC = 150mA,
V
= 2.0V, IB1 = 15mA
BE(OFF)
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
= 0.4V
= 0.4V
1,000
350
T = 125°C
300
N (mW)
250
AIN
100
A
200
DISSI
150
FE
10
100
D
h, D
50
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
75 100 125
A
150
175
200
Fig. 1, Max Power Dissipation vs
Ambient Tem perature
DS30084 Rev. 9 - 2 2 of 4
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1
0.1
1
I , COLLECTOR CURRENT (mA)
C
10 1,000
100
Fig. 2 Typical DC Current Gain vs
Collector Current
MMST4401
© Diodes Incorporated
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