Page 1
MMST4126
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (MMST4124)
• Ideal for Medium Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Notes 3 and 4)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
= 25°C unless otherwise specified
A
BE
K
J
C
B
A
C
G
H
V
V
V
R
Tj, T
E
CBO
CEO
EBO
I
C
P
d
JA
θ
STG
C
B
M
L
FD
-25 V
-25 V
-4.0 V
-200 mA
200 mW
625
-55 to +150
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α
0° 8°
All Dimensions in mm
°C/W
°C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
-25
-25
-4.0
⎯
⎯
⎯
⎯
⎯
V
V
V
-50 nA
-50 nA
IC = -10μA, IE = 0
IC = -1.0mA, IB = 0
IE = -10μA, IC = 0
V
= -20V, IE = 0V
CB
V
= -3.0V, IC = 0V
EB
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
h
V
CE(SAT)
V
BE(SAT)
60
⎯
⎯
360
⎯
-0.40 V
-0.95 V
FE
120
IC = -2.0mA, VCE = -1.0V
⎯
IC = -50mA, V
IC = -50mA, IB = -5.0mA
IC = -50mA, IB = -5.0mA
= -1.0V
CE
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
C
obo
C
ibo
h
fe
f
T
120 480
250
Noise Figure NF
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration pulse test used to minimize self-heating effect.
DS30161 Rev. 7 - 2 1 of 3
www.diodes.com
⎯
⎯
⎯
4.5 pF
10 pF
⎯
MHz
⎯
4.0 dB
VCB = -5.0V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
V
= 1.0V, IC = -2.0mA, f = 1.0kHz
CE
VCE = -20V, IC = -10mA, f = 100MHz
V
= -5.0V, IC = -100μA,
CE
RS = 1.0kΩ, f = 1.0kHz
MMST4126
© Diodes Incorporated
Page 2
P, P
OWER
P
TIO
C
N
PUT C
P
C
T
N
C
C CUR
REN
T GAIN
C
O
CTO
R
T
TER
T
T
R
400
350
Note 1
100
f = 1MHz
N (mW)
A
DISSI
D
1,000
300
250
200
150
100
100
50
E (pF)
A
I
A
10
A
C
10
ibo
100
, I
IBO
OBO
C , OUTPUT CAPACITANCE (pF)
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75 100 125
150
175
200
Fig. 1, Max P ow e r D i ssipation vs.
Ambien t Temper at ure
1
0.1
V , COLLECTOR-BASE VOLTAGE (V)
1
CB
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
10
= 10
(V)
1
-EMI
LLE
FE
h, D
10
0.1
SATURATI ON VO LTAGE
CE(SAT)
V,
1
1.0
0.1
1
I , COLLECTOR CURRENT (mA)
C
10
100
Fig. 3, Typical DC Current Gain vs.
Collector Current
1,000
0.01
1
10
I , COLLECTOR CURRENT (mA)
C
100
Fig. 4, Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1,000
0.9
(V)
E
0.8
0.7
SATURATION VOLTAGE
BE(SAT)
V , BASE-EMI
0.6
I
C
= 10
I
B
0.5
110
I , COLLECTOR CURRENT (mA)
C
100
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
DS30161 Rev. 7 - 2 2 of 3
www.diodes.com
MMST4126
© Diodes Incorporated
Page 3
Ordering Information (Notes 4 and 6)
Device
MMST4126-7-F
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Packaging Shipping
SOT-323 3000/Tape & Reel
Marking Information
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Code J K L M N P R S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
K2B
IMPORTANT NOTICE
LIFE SUPPORT
K2B = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
YM
M = Month ex: 9 = September
DS30161 Rev. 7 - 2 3 of 3
www.diodes.com
MMST4126
© Diodes Incorporated
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