Diodes MMST4126 User Manual
MMST4126
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (MMST4124)
• Ideal for Medium Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Notes 3 and 4)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
= 25°C unless otherwise specified
A
BE
K
J
C
B
A
C
G
H
V
V
V
R
Tj, T
E
CBO
CEO
EBO
I
C
P
d
JA
θ
STG
C
B
M
L
FD
-25 V
-25 V
-4.0 V
-200 mA
200 mW
625
-55 to +150
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α
0° 8°
All Dimensions in mm
°C/W
°C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
-25
-25
-4.0
⎯
⎯
⎯
⎯
⎯
V
V
V
-50 nA
-50 nA
IC = -10μA, IE = 0
IC = -1.0mA, IB = 0
IE = -10μA, IC = 0
V
= -20V, IE = 0V
CB
V
= -3.0V, IC = 0V
EB
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
h
V
CE(SAT)
V
BE(SAT)
60
⎯
⎯
360
⎯
-0.40 V
-0.95 V
FE
120
IC = -2.0mA, VCE = -1.0V
⎯
IC = -50mA, V
IC = -50mA, IB = -5.0mA
IC = -50mA, IB = -5.0mA
= -1.0V
CE
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
C
obo
C
ibo
h
fe
f
T
120 480
250
Noise Figure NF
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration pulse test used to minimize self-heating effect.
DS30161 Rev. 7 - 2 1 of 3
www.diodes.com
⎯
⎯
⎯
4.5 pF
10 pF
⎯
MHz
⎯
4.0 dB
VCB = -5.0V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
V
= 1.0V, IC = -2.0mA, f = 1.0kHz
CE
VCE = -20V, IC = -10mA, f = 100MHz
V
= -5.0V, IC = -100μA,
CE
RS = 1.0kΩ, f = 1.0kHz
MMST4126
© Diodes Incorporated
P, P
OWER
P
TIO
C
N
PUT C
P
C
T
N
C
C CUR
REN
T GAIN
C
O
CTO
R
T
TER
T
T
R
400
350
Note 1
100
f = 1MHz
N (mW)
A
DISSI
D
1,000
300
250
200
150
100
100
50
E (pF)
A
I
A
10
A
C
10
ibo
100
, I
IBO
OBO
C , OUTPUT CAPACITANCE (pF)
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75 100 125
150
175
200
Fig. 1, Max P ow e r D i ssipation vs.
Ambien t Temper at ure
1
0.1
V , COLLECTOR-BASE VOLTAGE (V)
1
CB
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
10
= 10
(V)
1
-EMI
LLE
FE
h, D
10
0.1
SATURATI ON VO LTAGE
CE(SAT)
V,
1
1.0
0.1
1
I , COLLECTOR CURRENT (mA)
C
10
100
Fig. 3, Typical DC Current Gain vs.
Collector Current
1,000
0.01
1
10
I , COLLECTOR CURRENT (mA)
C
100
Fig. 4, Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1,000
0.9
(V)
E
0.8
0.7
SATURATION VOLTAGE
BE(SAT)
V , BASE-EMI
0.6
I
C
= 10
I
B
0.5
110
I , COLLECTOR CURRENT (mA)
C
100
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
DS30161 Rev. 7 - 2 2 of 3
www.diodes.com
MMST4126
© Diodes Incorporated
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