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Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (MMST4126)
• Ideal for Medium Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Notes 3 and 4)
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
= 25°C unless otherwise specified
A
Top View
MMST4124
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
C
B
Device Schematic
V
CBO
V
CEO
V
EBO
IC
E
30 V
25 V
5.0 V
200 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics @T
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
5. Short duration pulse test used to minimize self-heating effect.
MMST4124
Document number: DS30163 Rev. 9 - 2
Characteristic Symbol Min Max Unit Test Condition
A
PD
R
TJ, T
= 25°C unless otherwise specified
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
hFE
V
CE(SAT
V
BE(SAT
C
⎯
obo
C
⎯
ibo
hfe
fT
1 of 3
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JA
STG
30
25
5.0
⎯
⎯
120
60
⎯
⎯
⎯
⎯
⎯
50 nA
50 nA
360
⎯
0.30 V
0.95 V
4.0 pF
8.0 pF
120 480
300
⎯
200 mW
625
-55 to +150
V
IC = 10μA, IE = 0
V
IC = 1.0mA, IB = 0
V
IE = 10μA, IC = 0
V
= 20V, IE = 0V
CB
V
= 3.0V, IC = 0V
EB
IC = 2.0mA, VCE = 1.0V
⎯
IC = 50mA, V
CE
IC = 50mA, IB = 5.0mA
IC = 50mA, IB = 5.0mA
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
V
= 1.0V, IC = 2.0mA,
CE
⎯
f = 1.0kHz
VCE = 20V, IC = 10mA,
MHz
f = 100MHz
ο
C/W
°C
= 1.0V
January 2009
© Diodes Incorporated
MMST4124
400
1,000
350
300
N (mW)
I
250
AIN
100
200
DISSI
150
FE
10
h, D
D
100
50
0
1
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
Fig. 1 Power Dissipation vs.
Ambient Temperature (Note 1)
150
175
200
1
0.1
1
I , COLLECTOR CURRENT (mA)
C
10
1,000100
Fig. 2 Typical DC Current Gain vs.
Collector Current
10
(V)
E
(V)
-EMI
0.1
LLE
SATURATION VOLTAGE
CE(SAT)
V,
0.01
0.1 1 10
I , COLLECTOR CURRENT (mA)
C
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1
)
10
E (p
A
5
C
ibo
100
f = 1MHz
1,000
N V
1
SA
0.1
0.1 1 10
BE(SAT)
V , BASE-EMI
I , COLLECTOR CURRENT (mA)
C
Fig. 4 Typical Base-Emitter Saturation Voltage
vs. Collector Current
100
1,000
C
obo
0
0.1
1
V , REVERSE VOLTAGE (V)
R
10
100
Fig. 5 Typical Capacitance Characteristics
MMST4124
Document number: DS30163 Rev. 9 - 2
2 of 3
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January 2009
© Diodes Incorporated