Diodes MMST4124 User Manual

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Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (MMST4126)
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Notes 3 and 4)
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1)
= 25°C unless otherwise specified
A
Top View
MMST4124
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Mechanical Data
Case: SOT-323
Case Material: Molded Plastic, "Green" Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
C
B
Device Schematic
V
CBO
V
CEO
V
EBO
IC
E
30 V 25 V
5.0 V
200 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range
Electrical Characteristics @T
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
5. Short duration pulse test used to minimize self-heating effect.
MMST4124
Document number: DS30163 Rev. 9 - 2
Characteristic Symbol Min Max Unit Test Condition
A
PD
R
TJ, T
= 25°C unless otherwise specified
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
hFE
V
CE(SAT
V
BE(SAT
C
obo
C
ibo
hfe
fT
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JA
STG
30 25
5.0
⎯ ⎯
120
60
⎯ ⎯
⎯ ⎯ ⎯
50 nA 50 nA
360
0.30 V
0.95 V
4.0 pF
8.0 pF
120 480
300
200 mW 625
-55 to +150
V
IC = 10μA, IE = 0
V
IC = 1.0mA, IB = 0
V
IE = 10μA, IC = 0 V
= 20V, IE = 0V
CB
V
= 3.0V, IC = 0V
EB
IC = 2.0mA, VCE = 1.0V
IC = 50mA, V
CE
IC = 50mA, IB = 5.0mA IC = 50mA, IB = 5.0mA
VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 V
= 1.0V, IC = 2.0mA,
CE
f = 1.0kHz VCE = 20V, IC = 10mA,
MHz
f = 100MHz
ο
C/W
°C
= 1.0V
January 2009
© Diodes Incorporated
P, P
OWER
PAT
O
C CUR
RENT G
C
O
CTO
R
T
TER
T
TER
TURATIO
OLTAG
5
C
PACITANC
F
MMST4124
400
1,000
350
300 N (mW) I
250
AIN
100
200
DISSI
150
FE
10
h, D
D
100
50
0
1
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
Fig. 1 Power Dissipation vs.
Ambient Temperature (Note 1)
150
175
200
1
0.1
1
I , COLLECTOR CURRENT (mA)
C
10
1,000100
Fig. 2 Typical DC Current Gain vs.
Collector Current
10
(V) E
(V)
-EMI
0.1
LLE
SATURATION VOLTAGE
CE(SAT)
V,
0.01
0.1 1 10 I , COLLECTOR CURRENT (mA)
C
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1
)
10
E (p
A
5
C
ibo
100
f = 1MHz
1,000
N V
1
SA
0.1
0.1 1 10
BE(SAT)
V , BASE-EMI
I , COLLECTOR CURRENT (mA)
C
Fig. 4 Typical Base-Emitter Saturation Voltage
vs. Collector Current
100
1,000
C
obo
0
0.1
1
V , REVERSE VOLTAGE (V)
R
10
100
Fig. 5 Typical Capacitance Characteristics
MMST4124
Document number: DS30163 Rev. 9 - 2
2 of 3
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January 2009
© Diodes Incorporated
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