Diodes MMST3904 User Manual

Features

Epitaxial Planar Die Construction
Complementar
Lead
Quali
"Gree
Free/RoHS Compliant (Note 2)
fied to AEC-Q101 Standards for High Reliability
n" Device (Notes 3 and 4)
y PNP Type Available (MMST3906)
ce Mount Package

Mechanical Data

Case: SOT-323
Case Material:
Note 4. UL Flammability Classification Rating 94V-0
Moisture Sensitivity
Terminal Conn
Lead Fr
Alloy 42 leadframe).
Marking Informat
Orde
ring & Date Code Information: See Page 4
Weight: 0.006 gr
Molded Plastic, "Green" Molding Compound,
: Level 1 per J-STD-020C
ections: See Diagram
ee Plating (Matte Tin Finish annealed over
ion: K2N - See Page 4
ams (approximate)
MMST3904
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
BE
K
J
B
A C
C
B
G H
M
L
ED
C
E
SOT-323
Dim Min Max
A 0.25 0.40 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal E 0.30 0.40 G 1.20 1.40 H 1.80 2.20 J 0.0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.18 α
All Dimensions in mm
0° 8°
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current – Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com./products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
V V V
R
Tj, T
CBO
CEO
EBO
I
C
P
θ
d
JA STG
60 V 40 V
6.0 V 200 mA 200 mW 625
-55 to +150
. Product manufactured prior to Date
°C/W
°C
DS30082 Rev. 11 - 2 1 of 4
www.diodes.com
MMST3904
© Diodes Incorporated
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
h
V
CE(SAT)
V
BE(SAT)
SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance
C C
h h h
h
Current Gain-Bandwith Product
Noise Figure NF
SWITCHING CHARACTERISTICS
Delay Time Rise Time
Notes: 5. Short duration pulse test used to minimize self-heating effect.
BL
FE
obo
ibo
oe
f
t t
60 40
5.0
40 70
100
60 30
0.65
⎯ ⎯
ie
re
fe
1.0 10
0.5 8.0 x 10
100 400
⎯ ⎯ ⎯
50 nA 50 nA
⎯ ⎯
300
0.25
0.30
0.85
0.95
4.0 pF
8.0 pF
1.0 40
T
300
d
r
⎯ ⎯
5.0 dB
35 ns 35 ns
V
I
= 10μA, IE = 0
C
V
IC = 1.0mA, IB = 0
V
IE = 10μA, IC = 0 VCE = 30V, V VCE = 30V, V
EB(OFF)
EB(OFF)
IC = 100μA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 10mA, IB = 1.0mA
V
IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA
V
IC = 50mA, IB = 5.0mA
VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0
kΩ
-4
VCE = 10V, IC = 1.0mA, f = 1.0MHz
μS
VCE = 20V, IC = 10mA,
MHz
f = 100MHz VCC = 5.0V, IC = 100μA, RS = 1.0kΩ, f = 1.0MHz
VCC = 3.0V, IC = 10mA, V
= -0.5V, IB1 = 1.0mA
BE(OFF)
= 3.0V = 3.0V
DS30082 Rev. 11 - 2 2 of 4
www.diodes.com
MMST3904
© Diodes Incorporated
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