Features
• Epitaxial Planar Die Construction
• Complementar
• Ultra-Small Surfa
• Lead
• Quali
• "Gree
Free/RoHS Compliant (Note 2)
fied to AEC-Q101 Standards for High Reliability
n" Device (Notes 3 and 4)
y PNP Type Available (MMST3906)
ce Mount Package
Mechanical Data
• Case: SOT-323
• Case Material:
Note 4. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity
• Terminal Conn
• Lead Fr
Alloy 42 leadframe).
• Marking Informat
• Orde
ring & Date Code Information: See Page 4
• Weight: 0.006 gr
Molded Plastic, "Green" Molding Compound,
: Level 1 per J-STD-020C
ections: See Diagram
ee Plating (Matte Tin Finish annealed over
ion: K2N - See Page 4
ams (approximate)
MMST3904
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
BE
K
J
B
A
C
C
B
G
H
M
L
ED
C
E
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α
All Dimensions in mm
0° 8°
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com./products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
V
V
V
R
Tj, T
CBO
CEO
EBO
I
C
P
θ
d
JA
STG
60 V
40 V
6.0 V
200 mA
200 mW
625
-55 to +150
. Product manufactured prior to Date
°C/W
°C
DS30082 Rev. 11 - 2 1 of 4
www.diodes.com
MMST3904
© Diodes Incorporated
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
h
V
CE(SAT)
V
BE(SAT)
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
C
C
h
h
h
h
Current Gain-Bandwith Product
Noise Figure NF
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Notes: 5. Short duration pulse test used to minimize self-heating effect.
BL
FE
obo
ibo
oe
f
t
t
60
40
5.0
⎯
⎯
40
70
100
60
30
⎯
0.65
⎯
⎯
⎯
ie
re
fe
1.0 10
0.5 8.0 x 10
100 400
⎯
⎯
⎯
50 nA
50 nA
⎯
⎯
300
⎯
⎯
0.25
0.30
0.85
0.95
4.0 pF
8.0 pF
1.0 40
T
300
⎯
d
r
⎯
⎯
⎯
5.0 dB
35 ns
35 ns
V
I
= 10μA, IE = 0
C
V
IC = 1.0mA, IB = 0
V
IE = 10μA, IC = 0
VCE = 30V, V
VCE = 30V, V
EB(OFF)
EB(OFF)
IC = 100μA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
⎯
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
IC = 10mA, IB = 1.0mA
V
IC = 50mA, IB = 5.0mA
IC = 10mA, IB = 1.0mA
V
IC = 50mA, IB = 5.0mA
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
kΩ
-4
VCE = 10V, IC = 1.0mA,
f = 1.0MHz
⎯
μS
VCE = 20V, IC = 10mA,
MHz
f = 100MHz
VCC = 5.0V, IC = 100μA,
RS = 1.0kΩ, f = 1.0MHz
VCC = 3.0V, IC = 10mA,
V
= -0.5V, IB1 = 1.0mA
BE(OFF)
= 3.0V
= 3.0V
DS30082 Rev. 11 - 2 2 of 4
www.diodes.com
MMST3904
© Diodes Incorporated