Diodes MMST2907A User Manual
MMST2907A
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementar
• Ultra-Small Surfa
• Lead
Free/RoHS Compliant (Note 2)
y NPN Type Available (MMST2222A)
ce Mount Package
• "Green" Device (Note 3 and 4)
Mechanical Data
• Case: SOT-323
• Case Material: M
olded Plastic, "Green" Molding
Compound. UL Flammability Classification
Rating 94V-0 (Note 4)
• Moisture Sensitivity
• Terminals: Solderable per M
• Terminal Conn
• Lead Fr
ee Plating (Matte Tin Finish annealed over
: Level 1 per J-STD-020C
IL-STD-202, Method 208
ections: See Diagram
Alloy 42 leadframe).
• Marking Informat
• Orde
ring & Date Code Information: See Page 4
ion: K3F - See Page 4
• Weight: 0.006 grams (approximate)
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website
4. Product manufactured with Date Code 0627 (week 27, 2006) and new
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
= 25°C unless otherwise specified
A
K
J
Tj, T
at http://www.diodes.com/products/lead_free/index.php.
A
C
BE
G
H
C
B
V
V
V
R
E
CBO
CEO
EBO
I
C
P
d
JA
θ
STG
er are built with Green Molding Compound. Product manufactured prior to Date
C
B
M
L
ED
-60 V
-60 V
-5.0 V
-600 mA
200 mW
625 °C/W
-55 to +150
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α
All Dimensions in mm
0° 8°
°C
DS30081 Rev. 9 - 2 1 of 4
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MMST2907A
© Diodes Incorporated
P, P
OWER
PAT
O
CAPACITANC
pF)
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes: 5. Short duration pulse test used to minimize self-heating effect.
200
Note 1
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
h
V
CE(SAT)
V
BE(SAT)
C
C
f
t
t
t
BL
FE
obo
ibo
on
t
off
t
t
-60
-60
-5.0
⎯
⎯
⎯
75
100
100
100
50
⎯
⎯
⎯
⎯
⎯
⎯
-10
-50 nA
-50 nA
⎯
⎯
⎯
300
⎯
-0.4
-1.6
-1.3
-2.6
8.0 pF
— 30 pF
200
T
⎯
d
r
⎯
⎯
⎯
s
⎯
⎯
f
⎯
45 ns
10 ns
40 ns
100 ns
80 ns
30 ns
V
IC = -10μA, IE = 0
V
IC = -10mA, IB = 0
V
IE = -10μA, IC = 0
nA
VCB = -50V, IE = 0
μA
VCB = -50V, IE = 0, TA = 125°C
V
= -30V, V
CE
V
CE
= -30V, V
EB(OFF)
EB(OFF)
IC = -100µA, V
IC = -1.0mA, VCE = -10V
⎯
IC = -10mA, VCE = -10V
IC = -150mA, V
IC = -500mA, VCE = -10V
IC = -150mA, IB = -15mA
V
IC = -500mA, IB = -50mA
IC = 150mA, IB = 15mA
V
IC = 500mA, IB = 50mA
VCB = -10V, f = 1.0MHz, IE = 0
VEB = -2.0V, f = 1.0MHz, IC = 0
VCE = -20V, IC = -50mA,
MHz
f = 100MHz
VCC = -30V, IC = -150mA,
IB1 = -15mA
VCC = -6.0V, IC = -150mA,
IB1 = IB2 = -15mA
= -10V
CE
= -10V
CE
= -0.5V
= -0.5V
f = 1MHz
150
N (mW)
I
E (
100
DISSI
50
D
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
150
Fig. 1 Max Pow er Dissipati o n vs. Ambient Temper ature
175
200
Fig. 2 Typical Capacitance Characteristics
C
ibo
C
obo
V , REVERSE VOLTAGE (V)
R
DS30081 Rev. 9 - 2 2 of 4
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.diodes.com
MMST2907A
© Diodes Incorporated
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