Diodes MMST2222A User Manual
Features
• Epitaxial Planar Die Construction
• Complementar
• Lead
• "Gree
Free/RoHS Compliant (Note 2)
n" Device (Note 3 and 4)
y PNP Type Available (MMST2907A)
Mechanical Data
• Case: SOT-323
• Case Material:
Note 4. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity
• Terminals: Solderable per M
• Lead Fr
Alloy 42 leadframe).
• Terminal Conn
• Marking Informat
• Orde
ring & Date Code Information: See Page 4
• Weight: 0.006 gr
Molded Plastic, "Green" Molding Compound,
: Level 1 per J-STD-020C
IL-STD-202, Method 208
ee Plating (Matte Tin Finish annealed over
ections: See Diagram
ion: K3P - See Page 4
ams (approximate)
MMST2222A
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
BE
K
J
B
A
C
C
B
G
H
M
L
ED
C
E
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α
All Dimensions in mm
0° 8°
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
V
V
V
R
Tj, T
CBO
CEO
EBO
I
C
P
θ
d
JA
STG
75 V
40 V
6.0 V
600 mA
200 mW
625
-55 to +150
. Product manufactured prior to Date
°C/W
°C
DS30080 Rev. 9 - 2 1 of 4
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MMST2222A
© Diodes Incorporated
P, P
OWER
PATIO
C C
URR
N
T
GAIN
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
EBO
I
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
h
V
CE(SAT)
V
BE(SAT)
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
C
C
Current Gain-Bandwith Product
Noise Figure NF
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
5. Short duration pulse test used to minimize self-heating effect.
200
BL
FE
obo
ibo
f
t
t
t
t
75
40
6.0
⎯
⎯
⎯
⎯
35
50
75
100
40
50
35
⎯
0.6
⎯
⎯
⎯
T
300
⎯
d
r
s
f
⎯
⎯
⎯
⎯
⎯
⎯
⎯
10
10 nA
10 nA
20 nA
⎯
⎯
⎯
300
⎯
⎯
⎯
0.3
1.0
1.2
2.0
8 pF
25 pF
⎯
4.0 dB
10 ns
25 ns
225 ns
60 ns
V
= 10μA, IE = 0
I
C
V
IC = 10mA, IB = 0
V
IE = 10μA, IC = 0
nA
VCB = 60V, IE = 0
μA
VCB = 60V, IE = 0, TA = 150°C
VCE = 60V, V
EB(OFF)
VEB = 3.0V, IC = 0
VCE = 60V, V
EB(OFF)
IC = 100μA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
⎯
IC = 500mA, VCE = 10V
IC = 10mA, VCE = 10V, TA = -55°C
IC = 150mA, VCE = 1.0V
IC = 150mA, IB = 15mA B
V
IC = 500mA, I
IC = 150mA, IB = 15mA B
V
IC = 500mA, I
B = 50mA
B
B = 50mA
B
VCB = 10V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 20V, IC = 20mA,
MHz
f = 1.0MHz
VCE = 10V, IC = 100μA,
RS = 1.0kΩ, f = 1.0kHz
VCC = 30V, IC = 150mA,
V
= -0.5V, IB1 = 15mA
BE(OFF)
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
= 3.0V
= 3.0V
1,000
150
N (mW)
E
100
100
DISSI
FE
10
50
D
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75 100 125
150
Fig. 1 Max Power Dissipation vs. Ambient Temperature
175
200
h, D
1
0.1
1
I , COLLECTOR CURRENT (mA)
C
10
100
Fig. 2 Typical DC Current Gain vs.Collector Current
1,000
DS30080 Rev. 9 - 2 2 of 4
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.diodes.com
MMST2222A
© Diodes Incorporated
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