Diodes MMDTA42 User Manual

Features

• Epitaxial Planar Die Construction

• Ideal for Medium Power Amplification and Switching

• Lead Free/RoHS Compliant (Note 3)

• "Green" Device, Note 4 and 5

Mechanical Data

• Case: SOT-26

• Case Material: Molded Plastic, "Green" Molding

Compound, Note 5. UL Flammability Classification
Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminal Connections: See Diagram

• Terminals: Finish - Matte Tin Solderable per

MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over
Copper leadframe).

• Marking Information: K3M, See Page 3

• Ordering & Date Code Information: See Page 3

• Weight: 0.008 grams (approximate)

MMDTA42

DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

A

H

K

J

Q1

D

Q2

Dim Min Max Typ

SOT-26

A 0.35 0.50 0.38

C

B

B 1.50 1.70 1.60
C 2.70 3.00 2.80
D
F

⎯ ⎯
⎯ ⎯

0.95

0.55

H 2.90 3.10 3.00

M

J 0.013 0.10 0.05
K 1.00 1.30 1.10

L

F

L 0.35 0.55 0.40
M 0.10 0.20 0.15

0° 8°

α

All Dimens ons in mm i

⎯

Maximum Ratings @T

Characteristic

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Note 1) (Note 2)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage Temperature Range

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance rating (R
dissipation rating (P

3. No purposefully added lead.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

= 25°C unless otherwise specified

A

) and power derating curve (Figure 1).

d

Symbol Value Unit

V
V
V

R

Tj, T

CBO
CEO
EBO

IC
Pd

JA

θ

STG

300 V
300 V

6.0 V
500 mA
300 mW
417 °C/W

-55 to +150

°C

), power

θJA

DS30438 Rev. 5 - 2 1 of 3

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MMDTA42

© Diodes Incorporated

P, P

OWER

PATIO

C

O

CTO

R T

O

T

TER

C C

URR

T

G

T

TER VO

T

G

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic

OFF CHARACTERISTICS (Note 6)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current

ON CHARACTERISTICS (Note 6)

DC Current Gain

Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance
Current Gain-Bandwidth Product

Notes: 6. Short duration pulse test used to minimize self-heating effect.

350

300

N (mW)

250

200

DISSI

150

100

D

50

0

0

25 50

T , AMBIENT TEMPERATURE (°C)

A

75 100 125

150

Fig. 1, Max Power Dissipation vs.

Ambient Temperature

10,000

V = 5V

CE

1,000

T = 150°C

AIN

A

EN

100

T = -50°C

FE

h, D

A

10

T = 25°C

A

1

1

10 1,000

I , COLLECTOR CURRENT (mA)

C

100

Fig. 3, DC Current Gain vs. Collector Current

175

Symbol Min Max Unit Test Condition

V
V
V

(BR)CBO
(BR)CEO
(BR)EBO

I

CBO

I

EBO

⎯
⎯

hFE

V

CE(SAT)

V

BE(SAT)

⎯

⎯

Ccb ⎯

fT

300
300

6.0

25
40
40

50

⎯
⎯
⎯

100 nA
100 nA

⎯ ⎯

0.5 V

0.9 V

3.0 pF
⎯

V

IC = 100μA, IE = 0

V

IC = 1.0mA, IB = 0

V

IE = 100μA, IC = 0
VCB = 200V, IE = 0
V

= 6.0V, IC = 0

CE

IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 30mA, V
IC = 20mA, IB = 2.0mA
IC = 20mA, IB = 2.0mA

VCB = 20V, f = 1.0MHz, IE = 0
VCE = 20V, IC = 10mA,

MHz

f = 100MHz

CE

2.0

I

C

1.8

1.6

1.4

EMI

= 10

I

B

T = 150°C

A

1.2

LLE

1.0

0.8

T = 25°C

A

0.6

SATURATION VOLTAGE (V)

0.4

CE(SAT)

V,

0.2

200

0

110

I , COLLECTOR CURRENT (mA)

C

100

Fig. 2, Collector Emitter Saturation Voltage

vs. Collector Current

1.0

V = 5V

CE

0.9

E (V)

0.8

A
L

0.7

T = -50°C

A

0.6

0.5

T = 25°C

A

0.4

0.3

BE(ON)

V , BASE EMI

0.2

T = 150°C

A

0.1

0.1
Fig. 4, Bas e Emitter Voltage vs. Coll ector Current

110

I , COLLECTOR CURRENT (mA)

C

= 10V

T = -50°C

A

1,000

100

DS30438 Rev. 5 - 2 2 of 3

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MMDTA42

© Diodes Incorporated