Diodes MMDTA06 User Manual

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Features & Benefits

• BV

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• General purpose NPN transistors ideally suited for low power

• Dual transistors in a single SOT26 package taking half the

• Epitaxial planar die construction

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

ADVANCE INFORMATION

> 80V

CEO

= 1A Peak Pulse Current

CM

amplification and switching applications

footprint of two equivalent transistors in SOT23

SOT26

1

Top View

MMDTA06

80V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Mechanical Data

• Case: SOT26

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating: Matte Tin Finish annealed over Copper

leadframe

• Weight: 0.015 grams (approximate)

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B2

Device Symbol

C2

E2

B1

E2

B2

C1

E1

C2

Top View

Pin-Out

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

MMDTA06-7 A06 7 8 3,000

Notes: 1. No purposefully added lead.

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com

Marking Information

06

06 = Product Type Marking Code

MMDTA06

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θ

MMDTA06

Maximum Ratings @T

= 25°C unless otherwise specified

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Characteristic Symbol Value Unit

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Collector Current

V

CBO

V

CEO

V

EBO

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C

I

CM

80 V 80 V

4 V

500 mA

1 A

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Power Dissipation Linear Derating Factor

Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead (Note 7)

Operating and Storage Temperature Range

ADVANCE INFORMATION

Notes: 4. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition.

5. Same as note (4), except the device is measured at t ≤ 5 sec.

6. For a dual device with one active die.

7. Thermal resistance from junction to solder-point (at the end of the collector lead).

(Notes 5 & 6)

P

D

(Notes 4 & 6) (Notes 5 & 6)

(Notes 4 & 6) 140

R

JA

θ

R

JL

, T

T

J

STG

1.28

10.3

0.90

7.14 97

103

-55 to +150

W

mW/°C

°C/W

°C

MMDTA06

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Thermal Characteristics

1

V Limited

100m

25mm x 25m m 1oz Cu T

Collector Current (A)

C

I

ADVANCE INFORMATION

amb

Single Pulse

10m

100m 1 10 100

-VCE Collector-Emitter Voltage (V)

CE(sat)

DC

1s

100ms

10ms

=25°C

1ms

Safe Operating Area

100µs

1.0

25mm x 25m m

0.8

1oz Cu

0.6

0.4

0.2

0.0 0 20 40 60 80 100 120 140 160

Max Power Dissipation (W)

Temperature (°C)

Derating Curve

MMDTA06

25mm x 25m m 1oz Cu

140 120

T

=25°C

amb

100

25mm x 25mm 1oz Cu T

=25°C

amb

Single Pulse

100

D=0.5

80

10

60

D=0.2

40 20

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

Pulse Width (s)

Transient Thermal Impedance

D=0.05

D=0.1

Single Pulse

1

Maximum Power (W)

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Pulse Power Dissipation

MMDTA06

Document Number: DS35114 Rev: 1 - 2

3 of 8

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April 2011