DIODES MMDT5551 Datasheet

Features

Epitaxial Planar Die Construction

·

Complementary PNP Type Available

·

(MMDT5401)
Ideal for Medium Power Amplification and

·

Switching
Ultra-Small Surface Mount Package

·

Mechanical Data

Case: SOT-363, Molded Plastic

·

NEW PRODUCT

Terminals: Solderable per MIL-STD-202,

·

Method 208
Terminal Connections: See Diagram

·

Marking: K4N

·

· Weight: 0.006 grams (approx.)

MMDT5551

DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

SOT-363

Dim Min Max

A

B

C

D

F

H

J

M

K

L

M

All Dimensions in mm

0.10 0.30

1.15 1.35

2.00 2.20

0.65 Nominal

0.30 0.40

1.80 2.20

¾ 0.10

0.90 1.00

0.25 0.40

0.10 0.25

K

J

A

C2B1E

KXX

E2B2C

H

1

KXX

1

FD

C

B

L

Maximum Ratings

Characteristic Symbol MMDT5551 Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous (Note 1)

Power Dissipation (Note 1, 2)

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage and Temperature Range

Notes: 1. Valid provided that terminals are kept at ambient temperature.

2. Maximum combined dissipation.

@ TA= 25°C unless otherwise specified

V

V

V

R

T

j,TSTG

CBO

CEO

EBO

I

C

P

d

qJA

180 V

160 V

6.0 V

200 mA

200

625 K/W

-55 to +150 °C

mW

DS30172 Rev. C-1 1 of 2 MMDT5551

Electrical Characteristics

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 3)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

NEW PRODUCT

ON CHARACTERISTICS (Note 3)

DC Current Gain

Collector-Emitter Saturation Voltage

Base- Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Small Signal Current Gain

Current Gain-Bandwidth Product

Noise Figure

@ TA= 25°C unless otherwise specified

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

V

CE(SAT)

V

BE(SAT)

C

h

f

FE

obo

fe

T

180 ¾ V

160 ¾ V

6.0 ¾ V

¾ 50

¾ 50 nA

80
80
30

¾

¾ 1.0 V

¾ 6.0 pF

50 250 ¾

100 300 MHz

NF ¾ 8.0 dB

¾

250

¾

0.15

0.20

nA

mA

¾

V

= 100mA, IE= 0

I

C

= 1.0mA, IB= 0

I

C

= 10mA, IC= 0

I

E

V

= 120V, IE= 0

CB

V

= 120V, IE= 0, TA= 100°C

CB

= 4.0V, IC= 0

V

EB

= 1.0mA, VCE= 5.0V

I

C

I

= 10mA, VCE= 5.0V

C

I

= 50mA, VCE= 5.0V

C

= 10mA, IB= 1.0mA

I

C

I

= 50mA, IB= 5.0mA

C

= 10mA, IB= 1.0mA

I

C

I

= 50mA, IB= 5.0mA

C

= 10V, f = 1.0MHz, IE= 0

V

CB

= 10V, IC= 1.0mA,

V

CE

f = 1.0kHz

= 10V, IC= 10mA,

V

CE

f = 100MHz

= 5.0V, IC= 200mA,

V

CE

= 1.0kW, f = 1.0kHz

R

S

Notes: 3. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.

DS30172 Rev. C-1 2 of 2 MMDT5551