Diodes MMDT5551 User Manual
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (MMDT5401)
• Ideal for Medium Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 3)
• "Green" Device (Note 4 and 5)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
• Terminal Connections: See Diagram
• Marking Information: K4N, See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.006 grams (approximate)
MMDT5551
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
A
B
1C2
2E2
G
H
K
J
D
E
1
C
B
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C1B
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
M
H 1.80 2.20
J — 0.10
L
F
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
α
All Dimens mm ions in
0° 8°
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1, 2)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Maximum combined dissipation.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
V
V
V
R
Tj, T
CBO
CEO
EBO
IC
Pd
θ
JA
STG
180 V
160 V
6.0 V
200 mA
200 mW
625
-55 to +150
°C/W
°C
DS30172 Rev. 8 - 2
1 of 4
www.diodes.com
MMDT5551
© Diodes Incorporated
C
O
C
TOR T
O
T
TER
P
P
O
R
PATIO
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
hFE
V
CE(SAT)
V
BE(SAT)
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
C
hfe
Current Gain-Bandwidth Product
Noise Figure NF
Notes: 6. Short duration pulse test used to minimize self-heating effect.
200
150
N (mW)
100
DISSI
WE
,
50
D
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
150
175
200
Fig. 1, Max Power Dissipation vs.
Ambient Temperature
⎯
⎯
⎯
obo
fT
180
160
6.0
⎯
⎯
⎯
50
⎯
80
80
30
50 nA
⎯
250
⎯
0.15
0.20
1.0 V
⎯
6.0 pF
50 250
100 300 MHz
⎯
8.0 dB
0.15
0.14
0.13
0.12
EMI
0.11
0.10
0.09
LLE
0.08
0.07
SATURATION VOLTAGE (V)
0.06
CE(SAT)
V,
0.05
0.04
1
V
IC = 100μA, IE = 0
V
IC = 1.0mA, IB = 0
V
IE = 10μA, IC = 0
nA
VCB = 120V, IE = 0
μA
VCB = 120V, IE = 0, TA = 100°C
V
= 4.0V, IC = 0
EB
IC = 1.0mA, VCE = 5.0V
⎯
IC = 10mA, VCE = 5.0V
IC = 50mA, V
IC = 10mA, IB = 1.0mA
V
IC = 50mA, IB = 5.0mA
CE
= 5.0V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
VCB = 10V, f = 1.0MHz, IE = 0
⎯
V
= 10V, IC = 1.0mA, f = 1.0kHz
CE
VCE = 10V, IC = 10mA, f = 100MHz
V
= 5.0V, IC = 200μA,
CE
RS = 1.0kΩ, f = 1.0kHz
I
C
= 10
I
B
T = 150°C
A
T = 25°C
T = -50°C
A
10 100
I , COLLECTOR CURRENT (mA)
C
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
A
1,000
DS30172 Rev. 8 - 2
2 of 4
www.diodes.com
MMDT5551
© Diodes Incorporated
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