DIODES MMDT5451 Datasheet

Features

Complementary Pair

·

One 5551-Type NPN,

·

One 5401-Type PNP
Epitaxial Planar Die Construction

·

Ideal for Medium Power Amplification and

·

Switching
Ultra-Small Surface Mount Package

·

Mechanical Data

NEW PRODUCT

Case: SOT-363, Molded Plastic

·

Terminals: Solderable per MIL-STD-202,

·

Method 208
Terminal Connections: See Diagram

·

Marking: KNM

·

Weight: 0.006 grams (approx.)

·

MMDT5451

COMPLEMENTARY NPN / PNP

SMALL SIGNAL SURFACE MOUNT TRANSISTOR

SOT-363

A

C2B1E

1

KXX

E2B2C

K

J

E1, B1, C1= PNP5401 Section
E

, B2, C2= NPN5551 Section

2

1

H

FD

C

B

L

Dim Min Max

A

B

C

D

F

H

J

M

K

L

M

All Dimensions in mm

0.10 0.30

1.15 1.35

2.00 2.20

0.65 Nominal

0.30 0.40

1.80 2.20

¾ 0.10

0.90 1.00

0.25 0.40

0.10 0.25

Maximum Ratings, NPN 5551 Section

Characteristic Symbol NPN5551 Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous (Note 1)

Power Dissipation (Note 1, 2)

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage and Temperature Range

Maximum Ratings, PNP 5401 Section

Characteristic Symbol PNP5401 Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous (Note 1)

Power Dissipation (Note 1, 2)

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage and Temperature Range

@ TA= 25°C unless otherwise specified

V

CBO

V

CEO

V

EBO

I

C

P

d

R

qJA

T

j,TSTG

@ TA= 25°C unless otherwise specified

V

CBO

V

CEO

V

EBO

I

C

P

d

R

qJA

T

j,TSTG

180 V

160 V

6.0 V

200 mA

200

625 K/W

-55 to +150 °C

-160 V

-150 V

-5.0 V

-200 mA

200

625 K/W

-55 to +150 °C

mW

mW

Notes: 1. Valid provided that terminals are kept at ambient temperature.

2. Maximum combined dissipation.

DS30171 Rev. C-1 1 of 2 MMDT5451

Electrical Characteristics, NPN 5551 Section

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 3)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

NEW PRODUCT

ON CHARACTERISTICS (Note 3)

DC Current Gain

Collector-Emitter Saturation Voltage

Base- Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Small Signal Current Gain

Current Gain-Bandwidth Product

Noise Figure

@ TA= 25°C unless otherwise specified

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

V

CE(SAT)

V

BE(SAT)

C

h

f

FE

obo

fe

T

180 ¾ V

160 ¾ V

6.0 ¾ V

¾ 50

¾ 50 nA

80
80
30

¾

¾

250

¾

0.15

0.20

¾ 1.0 V

¾ 6.0 pF

50 250 ¾

100 300 MHz

NF ¾ 8.0 dB

nA

mA

¾

V

= 100mA, IE= 0

I

C

= 1.0mA, IB= 0

I

C

I

= 10mA, IC= 0

E

V

= 120V, IE= 0

CB

V

= 120V, IE= 0, TA= 100°C

CB

= 4.0V, IC= 0

V

EB

= 1.0mA, VCE= 5.0V

I

C

I

= 10mA, VCE= 5.0V

C

I

= 50mA, VCE= 5.0V

C

= 10mA, IB= 1.0mA

I

C

I

= 50mA, IB= 5.0mA

C

= 10mA, IB= 1.0mA

I

C

I

= 50mA, IB= 5.0mA

C

= 10V, f = 1.0MHz, IE= 0

V

CB

= 10V, IC= 1.0mA,

V

CE

f = 1.0kHz

= 10V, IC= 10mA,

V

CE

f = 100MHz

= 5.0V, IC= 200mA,

V

CE

= 1.0kW, f = 1.0kHz

R

S

Electrical Characteristics, PNP 5401 Section

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 3)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

ON CHARACTERISTICS (Note 3)

DC Current Gain

Collector-Emitter Saturation Voltage

Base- Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Small Signal Current Gain

Current Gain-Bandwidth Product

Noise Figure

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

FE

V

CE(SAT)

V

BE(SAT)

C

obo

h

fe

f

T

NF ¾ 8.0 dB

@ TA= 25°C unless otherwise specified

= -100mA, IE= 0

nA

mA

¾

V

I

C

= -1.0mA, IB= 0

I

C

= -10mA, IC= 0

I

E

V

= -120V, IE= 0

CB

= -120V, IE= 0, TA= 100°C

V

CB

= -3.0V, IC= 0

V

EB

= -1.0mA, VCE= -5.0V

I

C

I

= -10mA, VCE= -5.0V

C

I

= -50mA, VCE= -5.0V

C

= -10mA, IB= -1.0mA

I

C

I

= -50mA, IB= -5.0mA

C

= -10mA, IB= -1.0mA

I

C

I

= -50mA, IB= -5.0mA

C

= -10V, f = 1.0MHz, IE= 0

V

CB

= -10V, IC= -1.0mA,

V

CE

f = 1.0kHz

= -10V, IC= -10mA,

V

CE

f = 100MHz

= -5.0V, IC= -200mA,

V

CE

= 10W, f = 1.0kHz

R

S

-160 ¾ V

-150 ¾ V

-5.0 ¾ V

¾ -50

¾ -50 nA

50
60
50

¾

¾

240

¾

-0.2

-0.5

¾ -1.0 V

¾ 6.0 pF

40 200 ¾

100 300 MHz

Notes: 3. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.

DS30171 Rev. C-1 2 of 2 MMDT5451