Diodes MMDT5451 User Manual
COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Complementary Pair One 5551-Type NPN
One 5401-Type PNP
• Epitaxial Planar Die Construction
• Ideal for Medium Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 3)
• "Green" Device (Note 4 and 5)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
• Terminal Connections: See Diagram
• Marking Information: KNM, See Page 5
• Ordering & Date Code Information: See Page 5
• Weight: 0.006 grams (approximate)
A
B
1C2
2E2
G
H
K
J
E1, B1, C1 = PNP5401 Section
E2, B2, C2 = NPN5551 Section
D
E
1
C
B
C1B
L
F
MMDT5451
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
M
H 1.80 2.20
J — 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
α
All Dimens mm ions in
0° 8°
Maximum Ratings, NPN 5551 Section @T
= 25°C unless otherwise specified
A
Characteristic Symbol NPN5551 Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1, 2)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
V
V
V
R
Tj, T
CBO
CEO
EBO
IC
Pd
θ
JA
STG
180 V
160 V
6.0 V
200 mA
200 mW
625
-55 to +150
°C/W
°C
Maximum Ratings, PNP 5401 Section @T
= 25°C unless otherwise specified
A
Characteristic Symbol PNP5401 Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous (Note 1)
Power Dissipation (Note 1, 2)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Maximum combined dissipation.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30171 Rev. 9 - 2
www.diodes.com
1 of 5
V
V
V
R
Tj, T
CBO
CEO
EBO
IC
Pd
θ
JA
STG
-160 V
-150 V
-5.0 V
-200 mA
200 mW
625 K/W
-55 to +150
°C
MMDT5451
© Diodes Incorporated
Electrical Characteristics, NPN 5551 Section @T
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure NF
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
hFE
V
CE(SAT)
V
BE(SAT)
C
hfe
⎯
obo
fT
= 25°C unless otherwise specified
A
180
160
6.0
⎯
80
80
30
⎯
⎯
⎯
50 250
⎯
⎯
⎯
50
50 nA
⎯
250
⎯
0.15
0.20
1.0 V
6.0 pF
V
V
V
nA
μA
⎯
V
⎯
100 300 MHz
⎯
8.0 dB
IC = 100μA, IE = 0
IC = 1.0mA, IB = 0
IE = 10μA, IC = 0
VCB = 120V, IE = 0
VCB = 120V, IE = 0, TA = 100°C
V
= 4.0V, IC = 0
EB
IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, V
CE
= 5.0V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
VCB = 10V, f = 1.0MHz, IE = 0
V
= 10V, IC = 1.0mA,
CE
f = 1.0kHz
VCE = 10V, IC = 10mA,
f = 100MHz
V
= 5.0V, IC = 200μA,
CE
RS = 1.0kΩ, f = 1.0kHz
Electrical Characteristics, PNP 5401 Section @T
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
⎯
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
hFE
V
CE(SAT)
V
BE(SAT)
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
C
obo
hfe
fT
Noise Figure NF
Notes: 6. Short duration pulse test used to minimize self-heating effect.
DS30171 Rev. 9 - 2
2 of 5
www.diodes.com
= 25°C unless otherwise specified
A
-160
-150
-5.0
⎯
50
60
50
⎯
⎯
⎯
40 200
⎯
⎯
⎯
-50
-50 nA
⎯
240
⎯
-0.2
-0.5
-1.0 V
6.0 pF
V
V
V
nA
μA
⎯
V
⎯
100 300 MHz
⎯
8.0 dB
IC = -100μA, IE = 0
IC = -1.0mA, IB = 0
IE = -10μA, IC = 0
VCB = -120V, IE = 0
VCB = -120V, IE = 0, TA = 100°C
V
= -3.0V, IC = 0
EB
IC = -1.0mA, VCE = -5.0V
IC = -10mA, VCE = -5.0V
IC = -50mA, V
= -5.0V
CE
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
VCB = -10V, f = 1.0MHz, IE = 0
V
= -10V, IC = -1.0mA,
CE
f = 1.0kHz
VCE = -10V, IC = -10mA,
f = 100MHz
V
= -5.0V, IC = -200μA,
CE
RS = 10Ω, f = 1.0kHz
MMDT5451
© Diodes Incorporated
Loading...