DIODES MMDT5401 Datasheet
Features
Epitaxial Planar Die Construction
·
Complementary NPN Type Available
·
(MMDT 5551)
Ideal for Medium Power Amplification and
·
Switching
Ultra-Small Surface Mount Package
·
Mechanical Data
Case: SOT-363, Molded Plastic
·
NEW PRODUCT
Terminals: Solderable per MIL-STD-202,
·
Method 208
Terminal Connections: See Diagram
·
Marking: K4M
·
· Weight: 0.006 grams (approx.)
MMDT5401
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
SOT-363
K
J
A
C2B1E
KXX
E2B2C
H
1
KXX
1
FD
C
B
L
Dim Min Max
A
B
C
D
F
H
M
J
K
L
M
All Dimensions in mm
0.10 0.30
1.15 1.35
2.00 2.20
0.65 Nominal
0.30 0.40
1.80 2.20
¾ 0.10
0.90 1.00
0.25 0.40
0.10 0.25
Maximum Ratings
Characteristic Symbol MMDT5401 Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1, 2)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Notes: 1. Valid provided that terminals are kept at ambient temperature.
2. Maximum combined dissipation.
@ TA= 25°C unless otherwise specified
V
V
V
R
T
j,TSTG
CBO
CEO
EBO
I
C
P
d
qJA
-160 V
-150 V
-5.0 V
-200 mA
200
625 K/W
-55 to +150 °C
mW
DS30169 Rev. C-1 1 of 2 MMDT5401
Electrical Characteristics
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 3)
NEW PRODUCT
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
@ TA= 25°C unless otherwise specified
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
V
CE(SAT)
V
BE(SAT)
C
h
f
FE
obo
fe
T
-160 ¾ V
-150 ¾ V
-5.0 ¾ V
¾ -50
¾ -50 nA
50
60
50
¾
¾ -1.0 V
¾ 6.0 pF
40 200 ¾
100 300 MHz
NF ¾ 8.0 dB
¾
240
¾
-0.2
-0.5
nA
mA
¾
V
= -100mA, IE= 0
I
C
= -1.0mA, IB= 0
I
C
= -10mA, IC= 0
I
E
V
= -120V, IE= 0
CB
V
= -120V, IE= 0, TA= 100°C
CB
= -3.0V, IC= 0
V
EB
= -1.0mA, VCE= -5.0V
I
C
I
= -10mA, VCE= -5.0V
C
I
= -50mA, VCE= -5.0V
C
= -10mA, IB= -1.0mA
I
C
I
= -50mA, IB= -5.0mA
C
= -10mA, IB= -1.0mA
I
C
I
= -50mA, IB= -5.0mA
C
= -10V, f = 1.0MHz, IE= 0
V
CB
= -10V, IC= -1.0mA,
V
CE
f = 1.0kHz
= -10V, IC= -10mA,
V
CE
f = 100MHz
= -5.0V, IC= -200mA,
V
CE
= 10W, f = 1.0kHz
R
S
Notes: 3. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
DS30169 Rev. C-1 2 of 2 MMDT5401
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