Diodes MMDT5401 User Manual
y
1
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMDT5551)
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
SOT363
ADVANCE INFORMATION
Top View
B1
MMDT5401
150V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363
Mechanical Data
Case: SOT363
Case Material: Molded Plastic, “Green” Molding Compound,
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Finish. Solderable per MIL-STD-
202, Method 208
Weight: 0.006 grams (approximate)
C
C2
e3
B2
E1
Device S
mbol
E2
Top View
Pin-Out
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
MMDT5401-7-F K4M 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
K4M YM
K4M YM
K4M = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
MMDT5401
Document Number: DS30169 Rev: 10 - 2
1 of 5
www.diodes.com
April 2013
© Diodes Incorporated
Maximum Ratings
@T
= +25°C, unless otherwise specified.)
A
(
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Thermal Characteristics
@T
= +25°C, unless otherwise specified.)
A
(
Characteristic Symbol Value Unit
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case (Note 8)
Operating and Storage Temperature Range
ADVANCE INFORMATION
V
CBO
V
CEO
V
EBO
I
C
(Note 5)
(Notes 6 & 7) 320
(Note 5)
(Notes 6 & 7) 390
P
D
R
θJA
R
θJC
T
, T
J
STG
-160 V
-150 V
-6 V
-200 mA
200
625
140
-55 to +150 °C
MMDT5401
mW
°C/W
Electrical Characteristics
@T
= +25°C, unless otherwise specified.)
A
(
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Base-Emitter Cutoff Current
BV
BV
BV
I
CBO
I
EBO
-160
CBO
-150
CEO
-6
EBO
-50 nA
-50 µA
-50 nA
V
IC = -100µA, IE = 0
V
IC = -1mA, IB = 0
V
IE = -100µA, IC = 0
V
= -120V, IE = 0
CB
VCB = -120V, IE = 0, TA = +100°C
V
= -5V, IC = 0
EB
ON CHARACTERISTICS (Note 9)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
h
V
CE(sat)
V
BE(sat)
50
60 240
FE
50
I
-0.2
-0.5
-1.0 V
= -1.0mA, VCE = -5.0V
I
C
I
= -10mA, VCE = -5.0V
C
= -50mA, V
C
= -10mA, IB = -1.0mA
I
C
V
I
= -50mA, IB = -5.0mA
C
= -10mA, IB = -1.0mA
I
C
IC = -50mA, IB = -5.0mA
CE
= -5.0V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure NF
Notes: 5. For a device mounted on minimum recommended pad layout 1oz weight copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted 25mm X 25mm 2oz copper.
7. Maximum combined dissipation.
8. Thermal resistance from junction to the top of package.
9. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.
C
obo
h
fe
f
T
40
100
6.0 pF
200
300 MHz
8.0 dB
VCB = -10V, f = 1.0MHz, IE = 0
IC = -1mA, V
IC = -10mA, V
V
CE
R
= 10Ω f = 1.0kHz
S
CE
CE
= -5.0V, IC = -200µA,
= -10V, f = 1.0MHz
= -10V, f = 100MHz
MMDT5401
Document Number: DS30169 Rev: 10 - 2
2 of 5
www.diodes.com
April 2013
© Diodes Incorporated
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