Diodes MMDT4413 User Manual

COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363

Features

 Epitaxial Die Construction

 Two Internally Isolated NPN/PNP Transistors in One Package

NPN = 4401

PNP = 4403

 Ideal for Medium Power Amplification and Switching

 Ultra-Small Surface Mount Package

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. "Green" Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

SOT363

Top View

MMDT4413

Mechanical Data

 Case: SOT363

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish  Matte Tin Finish. Solderable per

MIL-STD-202, Method 208

 Weight: 0.006 grams (approximate)

C

B

1

E

1

Device Schematic

Top View

E

2

2

B

C

1

2

e3

Ordering Information (Note 4)

Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel

MMDT4413-7-F K13 7 8 3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year

Code X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

2010

2011 2012 2013 2014 2015

K13

YM

K13= Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

2016 2017

MMDT4413

Document number: DS30121 Rev. 11 - 2

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August 2013

© Diodes Incorporated

P

P

O

R

PATIO

N

Absolute Maximum Ratings: NPN, 4401 Type (Q1) (@T

Characteristic Symbol Value Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

V

CBO

V

CEO

V

EBO

IC

Absolute Maximum Ratings: PNP, 4403 Type (Q2) (@T

Characteristic Symbol Value Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

V

CBO

V

CEO

V

EBO

IC

= +25°C unless otherwise specified.)

A

60 V

40 V

6 V

600 mA

= +25°C unless otherwise specified.)

A

-40 V

-40 V

-5 V

-600 mA

MMDT4413

Thermal Characteristics – Total Device (@T

= +25°C unless otherwise specified.)

A

Characteristic Symbol Value Unit

Power Dissipation (Note 5) Total Device

Thermal Resistance, Junction to Ambient (Note 5)

Operating and Storage Temperature Range

Note: 5. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR4 PCB; the device is measured

under still air conditions whilst operating in a steady-state.

R

TJ, T

PD



JA

STG

200 mW

625 °C/W

-65 to +150 °C

Thermal Characteristics – Total Device

250

200

(mW)

150

DISSI

100

WE

,

d

50

0

0 40 80 120 160 200

T , AMBIENT TEMPERATURE ( C)

A

Fig. 1, Power Derating Curve (Total Device)

°

MMDT4413

Document number: DS30121 Rev. 11 - 2

2 of 8

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August 2013

© Diodes Incorporated

Electrical Characteristics, NPN 4401 Section (@T

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Base Cutoff Current

BV

CBO

BV

CEO

BV

EBO

I



CEX

IBL 

60

40

6.0

ON CHARACTERISTICS (Note 6)

20
40

DC Current Gain

hFE

80

100

40

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

V

CE(SAT)

V

BE(SAT)



0.75


SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Input Capacitance

Input Impedance

Voltage Feedback Ratio

Small Signal Current Gain

Output Admittance

Current Gain-Bandwidth Product

Ccb

Ceb 

hie

hre

hfe

hoe

fT



1.0 15

0.1 8.0 x 10-4

40 500

1.0 30 µS

250

SWITCHING CHARACTERISTICS

Delay Time

Rise Time

Storage Time

Fall Time

Note: 6. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%

td

tr

ts 

tf

MMDT4413

Document number: DS30121 Rev. 11 - 2







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= +25°C unless otherwise specified.)

A







100 nA

100 nA





300



0.40

0.75

0.95

1.2

6.5 pF

30 pF

V

V

V



V

V

IC = 100µA, IE = 0

IC = 1.0mA, IB = 0

IE = 100 µA, IC = 0

V

= 35V, V

CE

V

= 35V, V

CE

IC = 100µA, V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 150mA, V
IC = 500mA, VCE = 2.0V

IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA

IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA

VCB = 5.0V, f = 1.0MHz, IE = 0

VEB = 0.5V, f = 1.0MHz, IC = 0

k

V

= 10V, IC = 1.0mA, f = 1.0kHz





MHz

15 ns

20 ns

225 ns

30 ns

CE

VCE = 10V, IC = 20mA,
f = 100MHz

VCC = 30V, IC = 150mA,
V

BE(off)

VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA

MMDT4413

= 0.4V

EB(OFF)

= 0.4V

EB(OFF)

= 1.0V

CE

= 1.0V

CE

= 2.0V, IB1 = 15mA

© Diodes Incorporated

August 2013