Page 1
COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363
Features
Epitaxial Die Construction
Two Internally Isolated NPN/PNP Transistors in One Package
NPN = 4401
PNP = 4403
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
SOT363
Top View
MMDT4413
Mechanical Data
Case: SOT363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Finish. Solderable per
MIL-STD-202, Method 208
Weight: 0.006 grams (approximate)
C
B
1
E
1
Device Schematic
Top View
E
2
2
B
C
1
2
e3
Ordering Information (Note 4)
Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
MMDT4413-7-F K13 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
Code X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
2010
2011 2012 2013 2014 2015
K13
YM
K13= Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
2016 2017
MMDT4413
Document number: DS30121 Rev. 11 - 2
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August 2013
© Diodes Incorporated
Page 2
P
P
O
R
PATIO
N
Absolute Maximum Ratings: NPN, 4401 Type (Q1) (@T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
CBO
V
CEO
V
EBO
IC
Absolute Maximum Ratings: PNP, 4403 Type (Q2) (@T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
CBO
V
CEO
V
EBO
IC
= +25°C unless otherwise specified.)
A
60 V
40 V
6 V
600 mA
= +25°C unless otherwise specified.)
A
-40 V
-40 V
-5 V
-600 mA
MMDT4413
Thermal Characteristics – Total Device (@T
= +25°C unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation (Note 5) Total Device
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Note: 5. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR4 PCB; the device is measured
under still air conditions whilst operating in a steady-state.
R
TJ, T
PD
JA
STG
200 mW
625 °C/W
-65 to +150 °C
Thermal Characteristics – Total Device
250
200
(mW)
150
DISSI
100
WE
,
d
50
0
0 40 80 120 160 200
T , AMBIENT TEMPERATURE ( C)
A
Fig. 1, Power Derating Curve (Total Device)
°
MMDT4413
Document number: DS30121 Rev. 11 - 2
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© Diodes Incorporated
Page 3
Electrical Characteristics, NPN 4401 Section (@T
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
BV
CBO
BV
CEO
BV
EBO
I
CEX
IBL
60
40
6.0
ON CHARACTERISTICS (Note 6)
20
40
DC Current Gain
hFE
80
100
40
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
CE(SAT)
V
BE(SAT)
0.75
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Ccb
Ceb
hie
hre
hfe
hoe
fT
1.0 15
0.1 8.0 x 10-4
40 500
1.0 30 µS
250
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Note: 6. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
td
tr
ts
tf
MMDT4413
Document number: DS30121 Rev. 11 - 2
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= +25°C unless otherwise specified.)
A
100 nA
100 nA
300
0.40
0.75
0.95
1.2
6.5 pF
30 pF
V
V
V
V
V
IC = 100µA, IE = 0
IC = 1.0mA, IB = 0
IE = 100 µA, IC = 0
V
= 35V, V
CE
V
= 35V, V
CE
IC = 100µA, V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 150mA, V
IC = 500mA, VCE = 2.0V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
k
V
= 10V, IC = 1.0mA, f = 1.0kHz
MHz
15 ns
20 ns
225 ns
30 ns
CE
VCE = 10V, IC = 20mA,
f = 100MHz
VCC = 30V, IC = 150mA,
V
BE(off)
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
MMDT4413
= 0.4V
EB(OFF)
= 0.4V
EB(OFF)
= 1.0V
CE
= 1.0V
CE
= 2.0V, IB1 = 15mA
© Diodes Incorporated
August 2013
Page 4
CAPAC
T
N
C
F
C
O
CTO
R-EM
R VO
G
C CUR
RENT G
C
O
CTO
R T
O
T
TER
5
T
T
R
O
TAG
GAIN
N
T
H
P
R
ODU
C
T
H
30
20
2.0
1.8
E (V)
MMDT4413
1.6
LTA
)
10
E (p
A
I
1.4
1.2
ITTE
1.0
0.8
5.0
0.6
LLE
0.4
CE
0.2
V,
1,000
AIN
100
1.0
0.1
T = -25°C
A
101.0
REVERSE VOLTS (V)
Fig. 1 Typical Capacitance (4401)
T = 125°C
A
T = +25°C
A
50
EMI
LLE
0.
0.4
0.3
0.2
0
0.001 0.01
0.1
I BASE CURRENT (mA)
B
1
10
Fig. 2 Typical Collector Saturation Region (4401)
I
C
= 10
I
B
T = 25°C
A
T = 150°C
A
100
FE
10
h, D
1
0.1
1
I , COLLECTOR CURRENT (mA)
C
10
100
1,000
Fig. 3 Typical DC Current Gain vs. Collector Current (4401)
1.0
V = 5V
0.9
E (V)
L
0.8
CE
T = -50°C
A
V
0.7
E
0.6
0.5
0.4
BE(ON)
V , BASE EMI
0.3
0.2
10.1 10 100
I , COLLECTOR CURRENT (mA)
C
Fig. 5 Base Emitter Voltage vs. Collector Current (4401)
SATURATION VOLTAGE (V)
0.1
CE(SAT)
V,
T = -50°C
A
0
1
10
I , COLLECTOR CURRENT (mA)
C
100
Fig. 4 Collector Emitter Saturation Voltage vs. Collector Current (4401)
1,000
V = 5V
z)
CE
(M
100
DWID
10
BA
T
f,
1
110100
I , COLLECTOR CURRENT (mA)
Fig. 6 Gain Bandwidth Product vs. Collector Curr ent (4401)
C
1,000
MMDT4413
Document number: DS30121 Rev. 11 - 2
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© Diodes Incorporated
Page 5
Electrical Characteristics, PNP 4403 Section (@T
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
BV
BV
BV
I
CBO
CEO
EBO
CEX
IBL
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
hFE
V
CE(SAT)
V
BE(SAT)
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Ccb
Ceb
hie
hre
hfe
hoe
fT
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Note: 6. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
td
tr
ts
tf
-40
-40
-5.0
30
60
100
100
20
-0.75
1.5 15
0.1 8.0 x 10-4
60 500
1.0 100
200
= +25°C unless otherwise specified.)
A
-100 nA
-100 nA
300
-0.40
-0.75
-0.95
-1.30
8.5 pF
30 pF
V
V
V
V
V
IC = -100µA, IE = 0
IC = -1.0mA, IB = 0
IE = -100µA, IC = 0
V
= -35V, V
CE
V
= -35V, V
CE
IC = -100µA, V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -150mA, V
IC = -500mA, VCE = -2.0V
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
VCB = -10V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
k
V
= -10V, IC = -1.0mA, f = 1.0kHz
CE
S
15 ns
20 ns
225 ns
30 ns
MHz
VCE = -10V, IC = -20mA, f = 100MHz
VCC = -30V, IC = -150mA,
V
BE(off)
VCC = -30V, IC = -150mA,
IB1 = IB2 = -15mA
MMDT4413
= -0.4V
EB(OFF)
= -0.4V
EB(OFF)
= -1.0V
CE
= -2.0V
CE
= -2.0V, IB1 = -15mA
MMDT4413
Document number: DS30121 Rev. 11 - 2
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Page 6
CAPACITAN
C
p
F
C
O
C
TOR
T
TER VO
T
G
C
O
CTO
R T
O
T
TER
5
T
TER VOLTAG
C C
U
R
R
T G
G
T
H
PRODU
C
T
H
MMDT4413
E (V)
A
L
-EMI
LLE
CE
V
1,000
E (V)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.9
0.8
0.7
0
0.001 0.01
0.1
I , BASE CURRENT (mA)
B
1
10
Fig. 8 Typical Collector Saturati on Region (4403)
V = 5V
CE
T = -50°C
A
T = 25°C
A
100
30
20
C
)
E (
10
ibo
5.0
C
obo
1.0
-0.1
-1.0 -30
-10
REVERSE VOLTS (V)
Fig. 7 Typical Capacitance (4403)
0.
I
C
= 10
I
B
0.4
EMI
0.3
T = 25°C
A
T = 150°C
0.2
LLE
SATURATION VOLTAGE (V)
0.1
CE(SAT)
V,
0
110
I , COLLECTOR CURRENT (mA)
C
A
T = 50°C
A
100
1,000
Fig. 9 Collector Emitter Saturation Voltage vs. Collector Current (4403)
1,000
V = 5V
CE
AIN
100
EN
10
FE
h, D
0.6
0.5
0.4
BE(ON )
V , BASE EMI
T = 150°C
A
0.3
0.2
0.1
Fig. 10 Base- Emitter Voltage vs. Collector Current (4403)
1
I , COLLECTOR CURRENT (mA)
C
10 100
1,000
V = 5V
z)
CE
(M
100
10
AIN BANDWID
T
f,
1
1
Fig. 11 DC Current Gain vs. Collector Current (4403)
MMDT4413
Document number: DS30121 Rev. 11 - 2
10
I , COLLECTOR CURRENT (mA)
C
100
1,000
6 of 8
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1
1
I , COLLECTOR CURRENT (mA)
C
10 100
Fig. 12 Gain Bandwidth Product vs. Collector Current (4403)
August 2013
© Diodes Incorporated
Page 7
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
K
J
A
B C
H
M
D
L
F
Dim Min Max Typ
A 0.10 0.30 0.25
B 1.15 1.35 1.30
C 2.00 2.20 2.10
D 0.65 Typ
F 0.40 0.45 0.425
H 1.80 2.20 2.15
J 0 0.10 0.05
K 0.90 1.00 1.00
L 0.25 0.40 0.30
M 0.10 0.22 0.11
0° 8° -
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
G
Z
Y
X
C2
C2
C1
Dimensions Value (in mm)
Z 2.5
G 1.3
X 0.42
Y 0.6
C1 1.9
C2 0.65
MMDT4413
SOT363
MMDT4413
Document number: DS30121 Rev. 11 - 2
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Page 8
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
MMDT4413
MMDT4413
Document number: DS30121 Rev. 11 - 2
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