DIODES MMDT4403 Datasheet
Features
Epitaxial Planar Die Construction
·
Ideal for Low Power Amplification and
·
Switching
Mechanical Data
Case: SOT-363, Molded Plastic
·
Terminals: Solderable per MIL-STD-202,
·
NEW PRODUCT
Method 208
Terminal Connections: See Diagram
·
Marking: K2T
·
Weight: 0.006 grams (approx.)
·
MMDT4403
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
SOT-363
K
J
A
C2B1E
KXX
E2B2C
H
1
C
B
1
L
FD
Dim Min Max
A
B
C
D
F
H
J
M
K
L
M
All Dimensions in mm
0.10 0.30
1.15 1.35
2.00 2.20
0.65 Nominal
0.30 0.40
1.80 2.20
¾ 0.10
0.90 1.00
0.25 0.40
0.10 0.25
Maximum Ratings
Characteristic Symbol MMDT4403 Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1, 2)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Note: 1. Valid provided that terminals are kept at ambient temperature.
2. Maximum combined dissipation.
@ TA= 25°C unless otherwise specified
V
V
V
R
T
j,TSTG
CBO
CEO
EBO
I
C
P
d
qJA
-40 V
-40 V
-5.0 V
-600 mA
200
625 K/W
-55 to +150 °C
mW
DS30110 Rev. 3P-1 1 of 3 MMDT4403
Electrical Characteristics
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 3)
NEW PRODUCT
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
@ TA= 25°C unless otherwise specified
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
h
V
CE(SAT)
V
BE(SAT)
C
C
h
h
h
h
BL
FE
cb
eb
ie
re
fe
oe
f
T
t
d
t
r
t
s
t
f
-40 ¾ V
-40 ¾ V
-5.0 ¾ V
¾ -100 nA
¾ -100 nA
30
60
100
100
20
¾
-0.75
¾
¾ 8.5 pF
¾ 30 pF
1.5 15 kW
0.1 8.0 x 10
60 500 ¾
1.0 100 mS
200 ¾ MHz
¾ 15 ns
¾ 20 ns
¾ 225 ns
¾ 30 ns
¾
¾
¾
300
¾
-0.40
-0.75
-0.95
-1.30
¾
V
V
= -100mA, IE= 0
I
C
= -1.0mA, IB= 0
I
C
= -100mA, IC= 0
I
E
= -35V, V
V
CE
= -35V, V
V
CE
I
= -100µA, VCE= -1.0V
C
I
= -1.0mA, VCE= -1.0V
C
I
= -10mA, VCE= -1.0V
C
I
= -150mA, VCE= -2.0V
C
I
= -500mA, VCE= -2.0V
C
= -150mA, IB= -15mA
I
C
I
= -500mA, IB= -50mA
C
= -150mA, IB= -15mA
I
C
I
= -500mA, IB= -50mA
C
= -10V, f = 1.0MHz, IE= 0
V
CB
= -0.5V, f = 1.0MHz, IC= 0
V
EB
-4
V
= -10V, IC= -1.0mA,
CE
f = 1.0kHz
= -10V, IC= -20mA,
V
CE
f = 100MHz
= -30V, IC= -150mA,
V
CC
V
BE(off)
= -30V, IC= -150mA,
V
CC
I
= IB2= -15mA
B1
= -0.4V
EB(OFF)
= -0.4V
EB(OFF)
= -2.0V, IB1= -15mA
Note: 3. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
DS30110 Rev. 3P-1 2 of 3 MMDT4403
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