Diodes MMDT4403 User Manual
Features
• Epitaxial Planar Die Construction
• Ideal for Low Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 3)
• "Green" Device (Note 4 and 5)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
• Terminal Connections: See Diagram
• Marking Information: K2T – See Page 4
• Ordering & Date Code Information: See Page 4
• Weight: 0.006 grams (approximate)
MMDT4403
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
K
J
C2B
E
2B2
A
C
2
E
2
H
E
1
1
C
1
E1B
1
C
B
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C1B
2
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
M
H 1.80 2.20
J — 0.10
D
L
F
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
α
All Dimensi ns in mm o
0° 8°
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1, 2)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Maximum combined dissipation.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
V
V
V
R
Tj, T
CBO
CEO
EBO
IC
Pd
JA
θ
STG
-40 V
-40 V
-5.0 V
-600 mA
200 mW
625
-55 to +150
°C/W
°C
DS30110 Rev. 10 - 2
1 of 4
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MMDT4403
© Diodes Incorporated
C
O
CTO
R
T
O
T
T
R
P, P
O
R
P
TIO
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes: 6. Short duration pulse test used to minimize self-heating effect.
250
Note 1
200
N (mW)
A
150
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
IBL
hFE
V
CE(SAT)
V
BE(SAT)
Ccb
Ceb
hie
hre
hfe
hoe
-40
-40
-5.0
⎯
⎯
30
60
100
100
20
⎯
-0.75
⎯
⎯
⎯
⎯
⎯
⎯
-100 nA
-100 nA
⎯
⎯
⎯
300
⎯
-0.40
-0.75
-0.95
-1.30
8.5 pF
30 pF
1.5 15
0.1 8.0 x 10-4
60 500
1.0 100
fT
td
tr
ts
tf
200
⎯
⎯
⎯
⎯
⎯
15 ns
20 ns
225 ns
30 ns
V
IC = -100μA, IE = 0
V
IC = -1.0mA, IB = 0
V
IE = -100μA, IC = 0
V
= -35V, V
CE
V
= -35V, V
CE
IC = -100µA, V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
⎯
IC = -150mA, V
IC = -500mA, VCE = -2.0V
IC = -150mA, IB = -15mA
V
IC = -500mA, IB = -50mA
IC = -150mA, IB = -15mA
V
IC = -500mA, IB = -50mA
VCB = -10V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
kΩ
V
= -10V, IC = -1.0mA,
CE
f = 1.0kHz
⎯
μS
VCE = -10V, IC = -20mA,
MHz
f = 100MHz
VCC = -30V, IC = -150mA,
V
= -2.0V, IB1 = -15mA
BE(off)
VCC = -30V, IC = -150mA,
IB1 = IB2 = -15mA
EB(OFF)
EB(OFF)
= -1.0V
CE
= -2.0V
CE
= -0.4V
= -0.4V
0.5
I
C
= 10
I
B
E
0.4
EMI
0.3
T = 25°C
A
DISSI
100
WE
D
50
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75 100 125
150
175
200
Fig. 1 Max Power Dissipation vs.
Ambient Temperature
DS30110 Rev. 10 - 2
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0.2
LLE
SATURATION VOLTAGE (V)
0.1
CE(SAT)
V,
0
110
I , COLLECTOR CURRENT (mA)
C
Fig. 2 Collector Emitter Saturation Voltage
T = 150°C
A
100
vs. Collector Current
T = 50°C
A
1,000
MMDT4403
© Diodes Incorporated
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