Diodes MMDT4401 User Manual

Features

• Epitaxial Planar Die Construction

• Ideal for Low Power Amplification and Switching

• Ultra-Small Surface Mount Package

• Qualified to AEC-Q101 Standards for High Reliability

• Lead Free/RoHS Compliant (Note 3)

• "Green" Device (Note 4 and 5)

Mechanical Data

• Case: SOT-363

• Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

• Terminal Connections: See Diagram

• Marking Information: K2X – See Page 4

• Ordering & Date Code Information: See Page 4

• Weight: 0.006 grams (approximate)

MMDT4401

DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

1

C

B

C

1

SOT-363

Dim Min Max

A 0.10 0.30

B 1.15 1.35

C 2.00 2.20

D 0.65 Nominal

F 0.30 0.40

M

H 1.80 2.20

J — 0.10

L

F

1

C

1

K 0.90 1.00

L 0.25 0.40

M 0.10 0.25

α

All Dimensi ns in mm o

0° 8°

K

J

A

C2B1E

E

B

2

2

H

D

C2B1E

E

B

2

2

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous (Note 1)

Power Dissipation (Note 1, 2)

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage Temperature Range

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Maximum combined dissipation.

3. No purposefully added lead.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

V

V

V

R

Tj, T

CBO

CEO

EBO

IC

Pd

JA

θ

STG

60 V

40 V

6.0 V

600 mA

200 mW

625

-55 to +150

°C/W

°C

DS30111 Rev. 13 - 2

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MMDT4401

© Diodes Incorporated

C C

R

R

A

P

P

OWER

P

TIO

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Base Cutoff Current

ON CHARACTERISTICS (Note 6)

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Input Capacitance

Input Impedance

Voltage Feedback Ratio

Small Signal Current Gain

Output Admittance

Current Gain-Bandwidth Product

SWITCHING CHARACTERISTICS

Delay Time

Rise Time

Storage Time

Fall Time

Notes: 6. Short duration pulse test used to minimize self-heating effect.

300

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CEX

IBL

hFE

V

CE(SAT)

V

BE(SAT)

Ccb

Ceb

hie

hre

hfe

hoe

60

40

6.0

⎯

⎯

20
40
80

100

40

⎯

0.75

⎯

⎯

⎯

⎯

⎯

⎯

100 nA

100 nA

⎯
⎯
⎯

300

⎯

0.40

0.75

0.95

1.2

6.5 pF

30 pF

1.0 15

0.1 8.0 x 10-4

40 500

1.0 30

fT

td

tr

ts

tf

250

⎯

⎯

⎯

⎯

⎯

15 ns

20 ns

225 ns

30 ns

V

IC = 100μA, IE = 0

V

IC = 1.0mA, IB = 0

V

IE = 100μA, IC = 0

V

= 35V, V

CE

V

= 35V, V

CE

IC = 100µA, V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V

⎯

IC = 150mA, V
IC = 500mA, VCE = 2.0V

IC = 150mA, IB = 15mA

V

IC = 500mA, IB = 50mA

IC = 150mA, IB = 15mA

V

IC = 500mA, IB = 50mA

VCB = 5.0V, f = 1.0MHz, IE = 0

VEB = 0.5V, f = 1.0MHz, IC = 0

kΩ

V

= 10V, IC = 1.0mA,

CE

f = 1.0kHz

⎯

μS

VCE = 10V, IC = 20mA,

MHz

f = 100MHz

VCC = 30V, IC = 150mA,
V

= 2.0V, IB1 = 15mA

BE(off)

VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA

EB(OFF)

EB(OFF)

= 1.0V

CE

= 1.0V

CE

= 0.4V

= 0.4V

1,000

250

Note 1

T = 125°C

A

IN

N (mW)

200

A

150

100

ENT G

U

T = -25°C

A

T = +25°C

A

DISSI

100

,

D

50

0

0

25 50

T , AMBIENT TEMPERATURE (°C)

A

75

100 125

150

Fig. 1 Max Power Dissipation vs. Ambient Temperature

DS30111 Rev. 13 - 2

175

200

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FE

10

h, D

V = 1.0V

CE

1

0.1

1

I , COLLECTOR CURRENT (mA)

C

10

100

Fig. 2 Typical DC Cur rent Gain vs. Collector Current

1,000

MMDT4401

© Diodes Incorporated