DIODES MMDT4146 Datasheet
Features
Complementary Pair
·
One 4124-Type NPN,
·
One 4126-Type PNP
Epitaxial Planar Die Construction
·
Ideal for Medium Power Amplification and
·
Switching
Ultra-Small Surface Mount Package
·
Mechanical Data
NEW PRODUCT
Case: SOT-363, Molded Plastic
·
Terminals: Solderable per MIL-STD-202,
·
Method 208
Terminal Connections: See Diagram
·
Marking: K12
·
Weight: 0.006 grams (approx.)
·
MMDT4146
COMPLEMENTARY NPN / PNP
SMALL SIGNAL SURFACE MOUNT TRANSISTOR
SOT-363
A
C2B1E
1
KXX
E2B2C
K
J
E1, B1, C1= PNP4126 Section
E
, B2, C2= NPN4124 Section
2
1
H
FD
C
B
L
Dim Min Max
A
B
C
D
F
H
J
M
K
L
M
All Dimensions in mm
0.10 0.30
1.15 1.35
2.00 2.20
0.65 Nominal
0.30 0.40
1.80 2.20
¾ 0.10
0.90 1.00
0.25 0.40
0.10 0.25
Maximum Ratings, NPN 4124 Section
Characteristic Symbol NPN 4124 Section Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1, 2)
Thermal Resistance, Junction to Ambient (Note 1)
Maximum Ratings, PNP 4126 Section
Characteristic Symbol PNP 4126 Section Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1, 2)
Thermal Resistance, Junction to Ambient (Note 1)
Notes: 1. Valid provided that terminals are kept at ambient temperature. Total device dissipation.
2. Maximum combined dissipation.
@ TA= 25°C unless otherwise specified
V
CBO
V
CEO
V
EBO
I
C
P
d
R
qJA
@ TA= 25°C unless otherwise specified
V
CBO
V
CEO
V
EBO
I
C
P
d
R
qJA
60 V
40 V
6.0 V
200 mA
200
625 K/W
-40 V
-40 V
-5.0 V
-200 mA
200
625 K/W
mW
mW
DS30162 Rev. D-1 1 of 2 MMDT4146
Electrical Characteristics, NPN 4124 Section
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 3)
NEW PRODUCT
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
V
CE(SAT)
V
BE(SAT)
C
C
h
f
FE
obo
ibo
fe
T
@ TA= 25°C unless otherwise specified
I
30 ¾ V
25 ¾ V
5.0 6.0 V
¾ 50 nA
¾ 50 nA
120
60
360
¾
¾
¾ 0.30 V
¾ 0.95 V
¾ 4.0 pF
¾ 8.0 pF
120 480 ¾
300 ¾ MHz
= 10mA, IE= 0
C
= 1.0mA, IB= 0
I
C
I
= 10mA, IC= 0
E
= 20V, IE= 0V
V
CB
= 3.0V, IC= 0V
V
EB
= 2.0mA, VCE= 1.0V
I
C
I
= 50mA, VCE= 1.0V
C
= 50mA, IB= 5.0mA
I
C
= 50mA, IB= 5.0mA
I
C
= 5.0V, f = 1.0MHz, IE= 0
V
CB
= 0.5V, f = 1.0MHz, IC= 0
V
EB
= 1.0V, IC= 2.0mA,
V
CE
f = 1.0kHz
= 20V, IC= 10mA,
V
CE
f = 100MHz
Electrical Characteristics, PNP 4126 Section
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 3)
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Notes: 3. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
V
BE(SAT)
C
obo
C
ibo
h
fe
f
T
NF ¾ 4.0 dB
@ TA= 25°C unless otherwise specified
= -10mA, IE= 0
¾
I
C
= -1.0mA, IB= 0
I
C
= -10mA, IC= 0
I
E
V
CB
V
EB
= -2.0mA, VCE= -1.0V
I
C
I
= -50mA, VCE= -1.0V
C
= -50mA, IB= -5.0mA
I
C
= -50mA, IB= -5.0mA
I
C
V
CB
V
EB
V
CE
f = 1.0kHz
V
CE
f = 100MHz
-25 ¾ V
-25 ¾ V
-4.0 ¾ V
¾ -50 nA
¾ -50 nA
120
60
360
¾
¾ -0.40 V
¾ -0.95 V
¾ 4.5 pF
¾ 10 pF
120 480 ¾
250 ¾ MHz
VCE= -5.0V, IC= -100mA,
R
S
= -20V, IE= 0V
= -3.0V, IC= 0V
= -5.0V, f = 1.0MHz, IE= 0
= -0.5V, f = 1.0MHz, IC= 0
= -1.0V, IC= -2.0mA,
= -20V, IC= -10mA,
= 1.0kW, f = 1.0kHz
DS30162 Rev. D-1 2 of 2 MMDT4146
Loading...