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COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Complementary Pair One 4124-Type NPN
One 4126-Type PNP
• Epitaxial Planar Die Construction
• Ideal for Medium Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 3)
• "Green" Device (Note 4 and 5)
Top View
Maximum Ratings, NPN 4124 Section @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous (Note 1)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic, “Green” Molding Compound,
Note 5. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.006 grams (approximate)
C2B1E
E2B2C
Device Schematic
= 25°C unless otherwise specified
A
V
CBO
V
CEO
V
EBO
IC
1
1
MMDT4146
E1, B1, C1 = PNP4126 Section
E2, B2, C2 = NPN4124 Section
30 V
25 V
5.0 V
200 mA
Maximum Ratings, PNP 4126 Section @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
V
CBO
V
CEO
V
EBO
IC
-25 V
-25 V
-4 V
-200 mA
Thermal Characteristics – Total Device
Characteristic Symbol Value Unit
Power Dissipation (Note 1, 2)
Thermal Resistance, Junction to Ambient (Note 1)
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Maximum combined dissipation.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
R
PD
JA
200 mW
625
°C/W
MMDT4146
Document number: DS30162 Rev. 11 - 2
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www.diodes.com
January 2009
© Diodes Incorporated
Page 2
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(BR)
(BR)
)
)
(BR)
(BR)
(BR)
)
)
Electrical Characteristics, NPN 4124 Section @T
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure NF
Characteristic Symbol Min Max Unit Test Condition
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
hFE
V
CE(SAT
V
BE(SAT
C
obo
C
ibo
hfe
fT
= 25°C unless otherwise specified
A
30
25
5.0
⎯
⎯
120
60
⎯
⎯
⎯
⎯
120 480
300
⎯
⎯
⎯
⎯
50 nA
50 nA
360
⎯
0.30 V
0.95 V
4.0 pF
8.0 pF
⎯
5.0 dB
V
V
V
⎯
⎯
MHz
MMDT4146
IC = 10μA, IE = 0
IC = 1.0mA, IB = 0
IE = 10μA, IC = 0
V
= 20V, IE = 0V
CB
V
= 3.0V, IC = 0V
EB
IC = 2.0mA, VCE = 1.0V
IC = 50mA, V
IC = 50mA, IB = 5.0mA
IC = 50mA, IB = 5.0mA
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
V
= 1.0V, IC = 2.0mA,
CE
f = 1.0kHz
VCE = 20V, IC = 10mA,
f = 100MHz
V
= 5.0V, IC = 100μA,
CE
RS = 1.0kΩ, f = 1.0kHz
CE
= 1.0V
Electrical Characteristics, PNP 4126 Section @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
V
V
I
CBO
I
EBO
CBO
CEO
EBO
⎯
-25
-25
-4.0
⎯
⎯
⎯
⎯
V
V
V
-50 nA
-50 nA
IC = -10μA, IE = 0
IC = -1.0mA, IB = 0
IE = -10μA, IC = 0
V
= -20V, IE = 0V
CB
V
= -3.0V, IC = 0V
EB
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
CE(SAT
V
BE(SAT
hFE
120
60
⎯
⎯
360
⎯
-0.40 V
-0.95 V
IC = -2.0mA, VCE = -1.0V
⎯
IC = -50mA, V
IC = -50mA, IB = -5.0mA
IC = -50mA, IB = -5.0mA
= -1.0V
CE
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
C
C
hfe
obo
ibo
fT
Noise Figure NF
Notes: 6. Short duration pulse test used to minimize self-heating effect.
⎯
⎯
120 480
250
⎯
4.5 pF
10 pF
⎯
⎯
MHz
4.0 dB
VCB = -5.0V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
V
= -1.0V, IC = -2.0mA,
CE
f = 1.0kHz
VCE = -20V, IC = -10mA,
f = 100MHz
V
= -5.0V, IC = -100μA,
CE
RS = 1.0kΩ, f = 1.0kHz
MMDT4146
Document number: DS30162 Rev. 11 - 2
2 of 5
www.diodes.com
January 2009
© Diodes Incorporated
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P, P
OWER
P
TIO
C CUR
R
T
G
C
O
CTO
R
T
TER
T
TER
TURATIO
OLTAG
C
PACITANC
F
C
CUR
R
T
G
MMDT4146
1,000
350
300
N (mW)
A
250
200
AIN
EN
100
DISSI
150
10
100
D
RC/W
°
= 625
θ
0
JA
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
150
175
200
50
Fig. 1 Power Dissipation vs.
Ambient Temperat ur e (Total Device, N ot e 1)
10
FE
h, D
(V)
E
1.0
1
0.1
1
I , COLLECTOR CURRENT (mA)
C
10
100
1,000
Fig. 2 Typical DC Current Gain
vs. Collector Current (PNP-4126)
0.9
(V)
1
-EMI
N V
0.8
LLE
0.1
SATURA TION VOLTAGE
CE(SAT)
V,
0.01
100
)
E (p
10
A
1
10
I , COLLECTOR CURRENT (mA)
C
100
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Curr ent ( P NP-4126)
1,000
SA
0.7
0.6
I
C
= 10
I
B
0.5
110100
BE(SAT)
V , BASE-EM I
I , COLLECTOR CURRENT (mA)
C
Fig. 4 Typical Base-Emitter Saturation Voltage
vs. Collector Current (PNP-4126)
1,000
AIN
100
EN
10
FE
h, D
1
0.1
Fig. 5 Typical Capacitance Characteristics (PNP-4126)
MMDT4146
Document number: DS30162 Rev. 11 - 2
1
V , REVERSE VOLTAGE (V)
R
10
100
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1
0.1
1
I , COLLECTOR CURRENT (mA)
C
10
100
Fig. 6 Typical DC Current Gain
vs. Collector Current (NPN-4124)
1,000
January 2009
© Diodes Incorporated
Page 4
C
O
C
TOR
T
TER
T
TER
T
U
R
T
O
N
OLTAG
5
CAPACITAN
C
F
1
(V)
-EMI
0.1
LLE
SATURATION VOLTAGE
CE(SAT)
V,
0.01
0.1 1 10
Fig. 7 Typical Collector-Emitter Saturation Voltage
1
100
I , COLLECTOR CURRENT (mA)
C
vs. Collector Current (NPN-4124)
1,000
10
(V)
E
V
I
A
1
SA
0.1
0.1 1 10
BE(SAT)
V , BASE-EM I
I , COLLECTOR CURRENT (mA)
C
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current (NPN-4124)
MMDT4146
100
1,000
)
10
E (p
5
0
0.1
Fig. 9 Typical Capacitance Characteristics (NPN-4124)
1
V , REVERSE VOLTAGE (V)
R
10
100
Ordering Information (Note 7)
Part Number Case Packaging
MMDT4146-7-F SOT-363 3000/Tape & Reel
Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
Code J K L M N P R S T U V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
K12
MMDT4146
Document number: DS30162 Rev. 11 - 2
K12 = Product Type Marking Code
YM = Date Code Marking
YM
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
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MMDT4146
Package Outline Dimensions
K
J
A
SOT-363
Dim Min Max
B C
H
M
D
L
F
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Typ
F 0.40 0.45
H 1.80 2.20
J 0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.22
α
All Dimensions in mm
0° 8°
Suggested Pad Layout
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
G
Z
Y
X
C2
C2
C1
IMPORTANT NOTICE
LIFE SUPPORT
Dimensions Value (in mm)
Z 2.5
G 1.3
X 0.42
Y 0.6
C1 1.9
C2 0.65
MMDT4146
Document number: DS30162 Rev. 11 - 2
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January 2009
© Diodes Incorporated
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