Diodes MMDT4146 User Manual

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COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

• Complementary Pair One 4124-Type NPN
One 4126-Type PNP

• Epitaxial Planar Die Construction

• Ideal for Medium Power Amplification and Switching

• Ultra-Small Surface Mount Package

• Lead Free/RoHS Compliant (Note 3)

• "Green" Device (Note 4 and 5)

Top View

Maximum Ratings, NPN 4124 Section @T

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous (Note 1)

Mechanical Data

• Case: SOT-363

• Case Material: Molded Plastic, “Green” Molding Compound,

Note 5. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating) Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.006 grams (approximate)

C2B1E

E2B2C

Device Schematic

= 25°C unless otherwise specified

A

V

CBO

V

CEO

V

EBO

IC

1

1

MMDT4146

E1, B1, C1 = PNP4126 Section
E2, B2, C2 = NPN4124 Section

30 V
25 V

5.0 V

200 mA

Maximum Ratings, PNP 4126 Section @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)

V

CBO

V

CEO

V

EBO

IC

-25 V

-25 V

-4 V

-200 mA

Thermal Characteristics – Total Device

Characteristic Symbol Value Unit

Power Dissipation (Note 1, 2)
Thermal Resistance, Junction to Ambient (Note 1)

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Maximum combined dissipation.

3. No purposefully added lead.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

R

PD

JA

200 mW
625

°C/W

MMDT4146

Document number: DS30162 Rev. 11 - 2

1 of 5

www.diodes.com

January 2009

© Diodes Incorporated

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Electrical Characteristics, NPN 4124 Section @T

OFF CHARACTERISTICS (Note 6)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current

ON CHARACTERISTICS (Note 6)

DC Current Gain
Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance
Input Capacitance

Small Signal Current Gain

Current Gain-Bandwidth Product

Noise Figure NF

Characteristic Symbol Min Max Unit Test Condition

V

CBO

V

CEO

V

EBO

I

CBO

I

EBO

hFE

V

CE(SAT

V

BE(SAT

C

obo

C

ibo

hfe

fT

= 25°C unless otherwise specified

A

30
25

5.0
⎯
⎯

120

60

⎯

⎯

⎯

⎯

120 480

300

⎯

⎯
⎯
⎯

50 nA
50 nA

360

⎯

0.30 V

0.95 V

4.0 pF

8.0 pF

⎯

5.0 dB

V
V
V

⎯

⎯

MHz

MMDT4146

IC = 10μA, IE = 0
IC = 1.0mA, IB = 0
IE = 10μA, IC = 0
V

= 20V, IE = 0V

CB

V

= 3.0V, IC = 0V

EB

IC = 2.0mA, VCE = 1.0V
IC = 50mA, V
IC = 50mA, IB = 5.0mA
IC = 50mA, IB = 5.0mA

VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
V

= 1.0V, IC = 2.0mA,

CE

f = 1.0kHz
VCE = 20V, IC = 10mA,

f = 100MHz
V

= 5.0V, IC = 100μA,

CE

RS = 1.0kΩ, f = 1.0kHz

CE

= 1.0V

Electrical Characteristics, PNP 4126 Section @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current

V
V

V

I

CBO

I

EBO

CBO
CEO
EBO

⎯

-25

-25

-4.0

⎯

⎯
⎯
⎯

V
V
V

-50 nA

-50 nA

IC = -10μA, IE = 0
IC = -1.0mA, IB = 0
IE = -10μA, IC = 0
V

= -20V, IE = 0V

CB

V

= -3.0V, IC = 0V

EB

ON CHARACTERISTICS (Note 6)

DC Current Gain
Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

V

CE(SAT

V

BE(SAT

hFE

120

60

⎯
⎯

360

⎯

-0.40 V

-0.95 V

IC = -2.0mA, VCE = -1.0V

⎯

IC = -50mA, V
IC = -50mA, IB = -5.0mA
IC = -50mA, IB = -5.0mA

= -1.0V

CE

SMALL SIGNAL CHARACTERISTICS

Output Capacitance
Input Capacitance

Small Signal Current Gain

Current Gain-Bandwidth Product

C

C

hfe

obo
ibo

fT

Noise Figure NF

Notes: 6. Short duration pulse test used to minimize self-heating effect.

⎯
⎯

120 480

250

⎯

4.5 pF
10 pF

⎯

⎯

MHz

4.0 dB

VCB = -5.0V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
V

= -1.0V, IC = -2.0mA,

CE

f = 1.0kHz
VCE = -20V, IC = -10mA,

f = 100MHz
V

= -5.0V, IC = -100μA,

CE

RS = 1.0kΩ, f = 1.0kHz

MMDT4146

Document number: DS30162 Rev. 11 - 2

2 of 5

www.diodes.com

January 2009

© Diodes Incorporated