Diodes MMDT4126 User Manual

Features

• Epitaxial Planar Die Construction

• Complementary NPN Type Available (MMDT4124)

• Ideal for Medium Power Amplification and Switching

• Ultra-Small Surface Mount Package

• Lead Free/RoHS Compliant (Note 3)

• "Green" Device (Note 4 and 5)

Mechanical Data

• Case: SOT-363

• Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed

over Alloy 42 leadframe).

• Terminal Connections: See Diagram

• Marking Information: K2B, See Page 3

• Ordering & Date Code Information: See Page 3

• Weight: 0.006 grams (approximate)

MMDT4126

DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

A

B

1C2

2E2

G
H

K

J

D

E

1

C

B

C1B

SOT-363

Dim Min Max

A 0.10 0.30

B 1.15 1.35

C 2.00 2.20

D 0.65 Nominal

F 0.30 0.40

M

H 1.80 2.20

J — 0.10

K 0.90 1.00

L

F

L 0.25 0.40

M 0.10 0.25

α

All Dimens mm ions in

0° 8°

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current – Continuous (Note 1)

Power Dissipation (Note 1,2)

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage Temperature Range

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Maximum combined dissipation.

3. No purposefully added lead.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

V

V

V

R

Tj, T

CBO

CEO

EBO

IC

Pd

θ

JA

STG

-25 V

-25 V

-4.0 V

-200 mA

200 mW

625

-55 to +150

°C/W

°C

DS30160 Rev. 9 - 2

1 of 4

www.diodes.com

MMDT4126

© Diodes Incorporated

C

P

U

T

C

PACITANC

F

P

P

OWER

PATIO

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

ON CHARACTERISTICS (Note 4)

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

hFE

V

CE(SAT)

V

BE(SAT)

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Input Capacitance

Small Signal Current Gain

C

C

hfe

Current Gain-Bandwidth Product

Noise Figure NF

Notes: 4. Short duration pulse test used to minimize self-heating effect.

fT

obo

ibo

-25

-25

-4.0

⎯

⎯

120

60

⎯

⎯

⎯

⎯

⎯

⎯

⎯

-50 nA

-50 nA

360

⎯

-0.40 V

-0.95 V

4.5 pF

10 pF

120 480

250

⎯

⎯

4.0 dB

100

V

IC = -10μA, IE = 0

V

IC = -1.0mA, IB = 0

V

IE = -10μA, IC = 0

V

= -20V, IE = 0V

CB

V

= -3.0V, IC = 0V

EB

IC = -2.0mA, VCE = -1.0V

⎯

IC = -50mA, V

IC = -50mA, IB = -5.0mA

IC = -50mA, IB = -5.0mA

VCB = -5.0V, f = 1.0MHz, IE = 0

VEB = -0.5V, f = 1.0MHz, IC = 0

V

= -1.0V, IC = -2.0mA,

CE

⎯

f = 1.0kHz

VCE = -20V, IC = -10mA,

MHz

f = 100MHz

V

= -5.0V, IC = -100μA,

CE

RS = 1.0kΩ, f = 1.0kHz

= -1.0V

CE

350

300

N (mW)

)

E (p

250

200

DISSI

150

,

100

D

50

0

0

25 50

T , AMBIENT TEMPERATURE (°C)

A

75 100 125

150

175

200

Fig. 1, Max Power Dissipation vs.

Ambient Temperature

10

A

, IN

IBO

OBO

C , OUTPUT CAPACITANCE (pF)

1

0.1
V , COLLECTOR-BASE VOLTAGE (V)

CB

1

10

100

Fig. 2, Input and Output Capacitance vs.

Collector-Base Voltage

DS30160 Rev. 9 - 2

2 of 4

www.diodes.com

MMDT4126

© Diodes Incorporated