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Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (MMDT4126)
• Ideal for Medium Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• "Green" Device (Notes 5 and 6)
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous (Note 1)
Top View
MMDT4124
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic, “Green” Molding Compound,
Note 6. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
C2B1E
E2B2C
Device Schematic
V
CBO
V
CEO
V
EBO
IC
1
1
30 V
25 V
5.0 V
200 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Notes 1 & 2)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Electrical Characteristics @T
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure NF
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Maximum combined dissipation.
3. No purposefully added lead.
4. Short duration pulse test used to minimize self-heating effect.
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
6. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
MMDT4124
Document number: DS30164 Rev. 10 - 2
Characteristic Symbol Min Max Unit Test Condition
A
PD
R
TJ, T
= 25°C unless otherwise specified
V
CBO
V
CEO
V
EBO
I
⎯
CBO
I
EBO
hFE
V
CE(SAT
V
BE(SAT
C
⎯
obo
C
ibo
hfe
fT
1 of 3
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JA
STG
30
25
5.0
⎯
⎯
⎯
50 nA
⎯
120
60
⎯
⎯
50 nA
360
⎯
0.30 V
0.95 V
4.0 pF
⎯
8.0 pF
120 480
300
⎯
⎯
5.0 dB
200 mW
625
-55 to +150
V
IC = 10μA, IE = 0
V
IC = 1.0mA, IB = 0
V
IE = 10μA, IC = 0
V
= 20V, IE = 0V
CB
V
= 3.0V, IC = 0V
EB
IC = 2.0mA, VCE = 1.0V
⎯
IC = 50mA, V
CE
= 1.0V
IC = 50mA, IB = 5.0mA
IC = 50mA, IB = 5.0mA
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
⎯
V
= 1.0V, IC = 2.0mA, f = 1.0kHz
MHz
CE
VCE = 20V, IC = 10mA, f = 100MHz
V
= 5.0V, IC = 100μA,
CE
RS = 1.0kΩ, f = 1.0kHz
°C/W
°C
January 2009
© Diodes Incorporated
1,000
350
300
(mW)
AIN
250
100
200
DISSI
150
10
FE
D
100
RC/W
θ
50
JA
= 625
°
h, D
MMDT4124
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
Fig. 1 Power Dissipation vs.
Ambient Tem peratur e ( N ot e 1)
1
I
C
= 10
I
B
(V)
-EMI
0.1
LLE
SATURATION VOLTAGE
CE(SAT)
V,
0.01
0.1 1 10
I , COLLECTOR CURRENT (mA)
C
Fig. 3 Typical Collector-Emit te r Sa tu r at ion V oltage
vs. Collector Curr ent
1
150
100
f = 1MHz
175
200
1,000
1
0.1
1
I , COLLECTOR CURRENT (mA)
C
10
100
Fig. 2 Typical DC Current Gain vs. Collector Current
10
(V)
E
N V
1
SA
0.1
0.1 1 10 100 1,000
BE(SAT)
V , BASE-EMI
I , COLLECTOR CURRENT (mA)
C
Fig. 4 Typical Base-Emitter Saturation Voltage
vs. Collector Current
1,000
)
10
E (p
A
5
C
ibo
C
obo
0
0.1
V , COLLECTOR-BASE VOLTAGE (V)
1
CB
10
100
Fig. 5 Typical Capacitance Characteristics
MMDT4124
Document number: DS30164 Rev. 10 - 2
2 of 3
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January 2009
© Diodes Incorporated