Diodes MMDT3946LP4 User Manual
Features
• Complementary Pair: One 3904 (NPN) and One 3906 (PNP)
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Lead Free by Design/RoHS Compliant (Note 1)
• “Green” Device (Note 2)
Mechanical Data
• Case: DFN1310H4-6
• Case Material: Molded Plastic. “Green Molding”
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish – NiPdAu over Copper leadframe (Lead
NEW PRODUCT
Free Plating) Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 4
• Ordering Information: See Page 4
MMDT3946LP4
COMPLEMENTARY NPN / PNP SURFACE MOUNT TRANSISTORS
DFN1310H4-6
Dim Min Max Typ
A 1.25 1.38 1.30
B 0.95 1.08 1.00
C 0.20 0.30 0.25
D* - - 0.10
E** - - 0.20
G - 0.40 -
H 0 0.05 0.02
K* 0.10 0.20 0.15
L* 0.30 0.50 0.40
M** - - 0.35
N* - - 0.25
Z** - - 0.05
All Dimensions in mm
* Dimensions D, K, L, N Repeat 4X
** Dimensions E, M, Z Repeat 2X
B
C
2
E
2
E
1
1
B
C
2
1
Internal Schematic
(TOP VIEW)
E1, B1, C1 = PNP3906 Section
E
2
Top View
G
H
Side View
K
Z
R
0
.
1
5
0
B
D
L
E
M
ND
A
Bottom View
, B2, C2 = NPN3904 Section
L
N
C
Z
Maximum Ratings, NPN 3904 Section @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
Power Dissipation (Notes 3, 4)
Thermal Resistance, Junction to Ambient (Note 3)
Maximum Ratings, PNP 3906 Section @T
V
CBO
V
CEO
V
EBO
I
C
P
d
R
JA
θ
= 25°C unless otherwise specified
A
60 V
40 V
6.0 V
200 mA
200 mW
625 °C/W
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Notes 3, 4)
Thermal Resistance, Junction to Ambient (Note 3)
V
CBO
V
CEO
V
EBO
I
C
P
d
R
JA
θ
-40 V
-40 V
-5.0 V
-200 mA
200 mW
625 °C/W
Notes: 1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB.
4. Maximum combined dissipation.
DS30822 Rev. 4 - 2
1 of 5
www.diodes.com
MMDT3946LP
© Diodes Incorporated
Electrical Characteristics, NPN 3904 Section @T
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
NEW PRODUCT
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Characteristic Symbol Min Max Unit Test Condition
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
h
FE
V
CE(SAT)
V
BE(SAT)
C
obo
f
T
t
d
t
r
t
s
t
f
60
40
6.0
⎯
⎯
40
70
100
60
30
⎯
0.65
⎯
⎯
300
⎯
⎯
⎯
⎯
= 25°C unless otherwise specified
A
⎯
⎯
⎯
50 nA
50 nA
⎯
⎯
300
⎯
⎯
0.20
0.30
0.85
0.95
4.0 pF
⎯
35 ns
35 ns
200 ns
50 ns
V
V
V
⎯
V
V
MHz
I
= 10μA, IE = 0
C
I
= 1.0mA, IB = 0
C
I
= 10μA, IC = 0
E
V
= 30V, V
CE
V
= 30V, V
CE
= 100µA, V
I
C
I
= 1.0mA, VCE = 1.0V
C
= 10mA, VCE = 1.0V
I
C
I
= 50mA, V
C
= 100mA, VCE = 1.0V
I
C
EB(OFF)
EB(OFF)
CE
= 1.0V
CE
= 3.0V
= 3.0V
= 1.0V
IC = 10mA, IB = 1.0mA
I
= 50mA, IB = 5.0mA
C
= 10mA, IB = 1.0mA
I
C
= 50mA, IB = 5.0mA
I
C
V
= 5.0V, f = 1.0MHz, IE = 0
CB
= 20V, IC = 20mA,
V
CE
f = 100MHz
= 3.0V, IC = 10mA,
V
CC
V
= -0.5V, IB1 = 1.0mA
BE(off)
= 3.0V, IC = 10mA,
V
CC
I
= IB2 = 1.0mA
B1
Electrical Characteristics, PNP 3906 Section @T
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
h
V
CE(SAT)
V
BE(SAT)
FE
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
C
obo
f
T
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes: 5. Short duration test pulse used to minimize self-heating effect.
t
d
t
r
t
s
t
f
-40
-40
-5.0
⎯
⎯
60
80
100
60
30
⎯
-0.65
⎯
⎯
250
⎯
⎯
⎯
⎯
= 25°C unless otherwise specified
A
⎯
⎯
⎯
-50 nA
-50 nA
⎯
⎯
300
⎯
⎯
-0.25
-0.40
-0.85
-0.95
4.5 pF
⎯
35 ns
35 ns
225 ns
75 ns
V
V
V
⎯
V
V
MHz
I
= -10μA, IE = 0
C
I
= -1.0mA, IB = 0
C
I
= -10μA, IC = 0
E
V
CE
V
CE
= -100µA, V
I
C
= -1.0mA, VCE = -1.0V
I
C
I
= -10mA, VCE = -1.0V
C
= -50mA, V
I
C
I
= -100mA, VCE = -1.0V
C
= -10mA, IB = -1.0mA
I
C
= -50mA, IB = -5.0mA
I
C
= -10mA, IB = -1.0mA
I
C
I
= -50mA, IB = -5.0mA
C
V
CB
V
CE
f = 100MHz
V
CC
V
BE(off)
V
CC
I
B1
= -30V, V
= -30V, V
EB(OFF)
EB(OFF)
= -1.0V
CE
= -1.0V
CE
= -3.0V
= -3.0V
= -5.0V, f = 1.0MHz, IE = 0
= -20V, IC = -10mA,
= -3.0V, IC = -10mA,
= 0.5V, IB1 = -1.0mA
= -3.0V, IC = -10mA,
= IB2 = -1.0mA
DS30822 Rev. 4 - 2
2 of 5
www.diodes.com
MMDT3946LP
© Diodes Incorporated
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