Diodes MMDT3946 User Manual

COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

• Complementary Pair One 3904-Type NPN
One 3906-Type PNP

• Epitaxial Planar Die Construction

• Ideal for Low Power Amplification and Switching

• Ultra-Small Surface Mount Package

• Lead Free/RoHS Compliant (Note 3)

• "Green" Device (Note 4 and 5)

Top View

Maximum Ratings, NPN 3904 Section @T

Characteristic Symbol NPN 3904 Section Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)

Mechanical Data

• Case: SOT-363

• Case Material: Molded Plastic, “Green” Molding Compound,

Note 5. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating) Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Marking Information: See Page 5

• Ordering Information: See Page 5

• Weight: 0.006 grams (approximate)

C2B1E

E2B2C

Device Schematic

= 25°C unless otherwise specified

A

V

CBO

V

CEO

V

EBO

IC

1

1

MMDT3946

E1, B1, C1 = PNP3906 Section
E2, B2, C2 = NPN3904 Section

60 V
40 V

6.0 V

200 mA

Maximum Ratings, PNP 3906 Section @T

= 25°C unless otherwise specified

A

Characteristic Symbol PNP 3906 Section Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)

V

CBO

V

CEO

V

EBO

IC

-40 V

-40 V

-5.0 V

-200 mA

Thermal Characteristics, Total Device

Power Dissipation (Note 1, 2)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Maximum combined dissipation.

3. No purposefully added lead.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

R

TJ, T

PD

θ

JA

STG

MMDT3946

Document number: DS30123 Rev. 11 - 2

1 of 6

www.diodes.com

200 mW
625

-55 to +150

°C/W

°C

October 2008

© Diodes Incorporated

Electrical Characteristics, NPN 3904 Section @T

OFF CHARACTERISTICS (Note 6)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current

ON CHARACTERISTICS (Note 6)

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance

Current Gain-Bandwidth Product

Noise Figure NF

SWITCHING CHARACTERISTICS

Delay Time
Rise Time
Storage Time
Fall Time

Notes: 6. Short duration pulse test used to minimize self-heating effect.

MMDT3946

Document number: DS30123 Rev. 11 - 2

Characteristic Symbol Min Max Unit Test Condition

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CEX

IBL ⎯

hFE

V

CE(SAT)

V

BE(SAT)

C

obo

C

ibo

hie
hre
hfe

hoe

fT

td ⎯

tr ⎯

ts ⎯

tf ⎯

2 of 6

www.diodes.com

= 25°C unless otherwise specified

A

60
40

⎯
⎯

V
V

5.0 6.0 V

⎯

50 nA
50 nA

40
70

100

60
30

⎯

0.65
⎯

⎯
⎯

1.0 10

⎯
⎯

300

⎯
⎯

0.20

0.30

0.85

0.95

4.0 pF

8.0 pF

⎯

V

V

kΩ

0.5 8.0 x 10-4

100 400

1.0 40

300

⎯

⎯

5.0 dB

⎯

μS

MHz

35 ns
35 ns

200 ns

50 ns

MMDT3946

IC = 10μA, IE = 0
IC = 1.0mA, IB = 0
IE = 10μA, IC = 0
V

= 30V, V

CE

V

= 30V, V

CE

IC = 100µA, V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, V
IC = 100mA, VCE = 1.0V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA

VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0

V

= 10V, IC = 1.0mA,

CE

f = 1.0kHz

VCE = 20V, IC = 20mA,
f = 100MHz

V

= 5.0V, IC = 100μA,

CE

RS = 1.0kΩ, f = 1.0kHz

VCC = 3.0V, IC = 10mA,
V

= - 0.5V, IB1 = 1.0mA

BE(off)

VCC = 3.0V, IC = 10mA,
IB1 = IB2 = 1.0mA

EB(OFF)
EB(OFF)

= 1.0V

CE

= 1.0V

CE

= 3.0V
= 3.0V

October 2008

© Diodes Incorporated