Diodes MMDT3946 User Manual

Page 1
COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

Complementary Pair One 3904-Type NPN One 3906-Type PNP
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 3)
"Green" Device (Note 4 and 5)
Top View
Maximum Ratings, NPN 3904 Section @T
Characteristic Symbol NPN 3904 Section Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1)

Mechanical Data

Case: SOT-363
Case Material: Molded Plastic, “Green” Molding Compound,
Note 5. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 5
Ordering Information: See Page 5
Weight: 0.006 grams (approximate)
C2B1E
E2B2C
Device Schematic
= 25°C unless otherwise specified
A
V
CBO
V
CEO
V
EBO
IC
1
1
MMDT3946
E1, B1, C1 = PNP3906 Section E2, B2, C2 = NPN3904 Section
60 V 40 V
6.0 V
200 mA
Maximum Ratings, PNP 3906 Section @T
= 25°C unless otherwise specified
A
Characteristic Symbol PNP 3906 Section Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1)
V
CBO
V
CEO
V
EBO
IC
-40 V
-40 V
-5.0 V
-200 mA
Thermal Characteristics, Total Device
Power Dissipation (Note 1, 2) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Maximum combined dissipation.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
R
TJ, T
PD
θ
JA
STG
MMDT3946
Document number: DS30123 Rev. 11 - 2
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www.diodes.com
200 mW 625
-55 to +150
°C/W
°C
October 2008
© Diodes Incorporated
Page 2
Electrical Characteristics, NPN 3904 Section @T
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance
Current Gain-Bandwidth Product
Noise Figure NF
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time
Notes: 6. Short duration pulse test used to minimize self-heating effect.
MMDT3946
Document number: DS30123 Rev. 11 - 2
Characteristic Symbol Min Max Unit Test Condition
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
IBL
hFE
V
CE(SAT)
V
BE(SAT)
C
obo
C
ibo
hie hre hfe
hoe
fT
td
tr
ts
tf
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= 25°C unless otherwise specified
A
60 40
⎯ ⎯
V V
5.0 6.0 V
50 nA 50 nA
40 70
100
60 30
0.65
1.0 10
⎯ ⎯
300
⎯ ⎯
0.20
0.30
0.85
0.95
4.0 pF
8.0 pF
V
V
kΩ
0.5 8.0 x 10-4
100 400
1.0 40
300
5.0 dB
μS
MHz
35 ns 35 ns
200 ns
50 ns
MMDT3946
IC = 10μA, IE = 0 IC = 1.0mA, IB = 0 IE = 10μA, IC = 0 V
= 30V, V
CE
V
= 30V, V
CE
IC = 100µA, V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, V IC = 100mA, VCE = 1.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA
VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0
V
= 10V, IC = 1.0mA,
CE
f = 1.0kHz
VCE = 20V, IC = 20mA, f = 100MHz
V
= 5.0V, IC = 100μA,
CE
RS = 1.0kΩ, f = 1.0kHz
VCC = 3.0V, IC = 10mA, V
= - 0.5V, IB1 = 1.0mA
BE(off)
VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA
EB(OFF) EB(OFF)
= 1.0V
CE
= 1.0V
CE
= 3.0V = 3.0V
October 2008
© Diodes Incorporated
Page 3
C CUR
REN
T
G
N
P
P
O
R
P
T
O
N
Electrical Characteristics, PNP 3906 Section @T
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance
Current Gain-Bandwidth Product
Noise Figure NF
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time
Characteristic Symbol Min Max Unit Test Condition
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
IBL
hFE
V
CE(SAT)
V
BE(SAT)
C
obo
C
ibo
hie hre hfe
hoe
fT
td
tr
ts
tf
= 25°C unless otherwise specified
A
-40
-40
-5.0
⎯ ⎯ ⎯
V V V
-50 nA
-50 nA
60 80
100
60 30
-0.65
⎯ ⎯
300
⎯ ⎯
-0.25
-0.40
-0.85
-0.95
V
V
4.5 pF 10 pF
2.0 12
kΩ
0.1 10 x 10-4
100 400
3.0 60
250
4.0 dB
μS
MHz
35 ns 35 ns
225 ns
75 ns
1,000
MMDT3946
IC = -10μA, IE = 0 IC = -1.0mA, IB = 0 IE = -10μA, IC = 0 V
= -30V, V
CE
V
= -30V, V
CE
IC = -100µA, V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -50mA, V IC = -100mA, VCE = -1.0V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA
VCB = -5.0V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0
V
= 10V, IC = 1.0mA,
CE
f = 1.0kHz
VCE = -20V, IC = -10mA, f = 100MHz
V
= -5.0V, IC = -100μA,
CE
RS = 1.0kΩ, f = 1.0kHz
VCC = -3.0V, IC = -10mA, V
= 0.5V, IB1 = -1.0mA
BE(off)
VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA
EB(OFF) EB(OFF)
= -1.0V
CE
= -1.0V
CE
= -3.0V = -3.0V
350
300
(mW) I
250
A
AI
100
200
DISSI
150
WE ,
100
D
RC/W
50
0
0
°
= 625
θ
JA
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
150
175
200
Fig. 1 Power Dissipation vs.
Ambient Temperature (Total De vice, Note 1)
FE
10
h, D
1
0.1
1
I , COLLECTOR CURRENT (mA)
C
10
100
Fig. 2 Typical DC Current Gain vs.
Collector Current (NPN-3904)
1,000
MMDT3946
Document number: DS30123 Rev. 11 - 2
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October 2008
© Diodes Incorporated
Page 4
C
O
C
T
O
R
T
TER
T
TER
T
U
RAT
O
OLTAG
C CUR
RENT G
5
CAPACITAN
C
F
C
O
C
TOR
T
T
R
T
T
R
MMDT3946
1
(V)
-EMI
0.1
LLE
SATURATION VOLT AGE
CE(SAT)
V,
0.01
0.1 1 10 I , COLLECTOR CURRENT (mA)
C
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current (NPN-3904)
1
100
1,000
10
(V) E
N V I
1
SA
0.1
0.1 1 10 100 1,000
BE(SAT)
V , BASE-EMI
I , COLLECTOR CURRENT (mA)
C
Fig. 4 Typical Base-Emitter Saturation Voltage
vs. Collector Current (NPN-3904)
1,000
)
10
E (p
5
0
0.1
1
V , REVERSE VOLT AGE (V)
R
10
Fig. 5 Typical Capacitance Characteristics (NPN-3904)
10
E
1
-EMI
LLE
100
E
AIN
100
FE
h, D
(V)
10
1
1.0
0.9
0.8
0.7
0.1
1
I , COLLECTOR CURRENT (mA)
C
10
100
Fig. 6 Typical D C Current Gain vs .
Collector Current (PNP-3906)
1,000
0.1
BE(SAT)
SATURATION VOLTAGE (V)
CE(SAT)
V,
0.01 1
10
I , COLLECTOR CURRENT (mA)
C
100
1,000
Fig. 7 Typical Collector-Emitter Saturation Voltage
vs. Collector Current (PNP-3906)
MMDT3946
Document number: DS30123 Rev. 11 - 2
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V , BASE-EMI
SATURATION VOLTAGE
0.6
I
C
= 10
I
B
0.5 110
I , COLLECTOR CURRENT (mA)
C
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current (PNP-3906)
100
October 2008
© Diodes Incorporated
Page 5
CAPACITAN
C
F
100
) E (p
10
1
0.1
Fig. 9 Typical Capacitance Characteristics (PNP-3906)
1
V , REVERSE VOLT AGE (V)
R
10 100
Ordering Information (Note 7)
Part Number Case Packaging
MMDT3946-7-F SOT-363 3000/Tape & Reel
Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
MMDT3946

Marking Information

Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
Code J K L M N P R S T U V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
K46
K46 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002)
YM
M = Month (ex: 9 = September)

Package Outline Dimensions

K
J
MMDT3946
Document number: DS30123 Rev. 11 - 2
A
B C
H
M
D
L
F
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SOT-363
Dim
All Dimensions in mm
A B C D F H J K L M
α
Min Max
0.10 0.30
1.15 1.35
2.00 2.20
0.65 Typ
0.40 0.45
1.80 2.20 0 0.10
0.90 1.00
0.25 0.40
0.10 0.22
0° 8°
October 2008
© Diodes Incorporated
Page 6
MMDT3946

Suggested Pad Layout

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
G
Z
Y
X
C2
C2
Dimensions Value (in mm)
C1
IMPORTANT NOTICE
LIFE SUPPORT
Z 2.5
G 1.3
X 0.42
Y 0.6 C1 1.9 C2 0.65
MMDT3946
Document number: DS30123 Rev. 11 - 2
6 of 6
www.diodes.com
October 2008
© Diodes Incorporated
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