Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
V
CBO
V
CEO
V
EBO
IC
-40 V
-40 V
-5.0 V
-200 mA
Thermal Characteristics, Total Device
Power Dissipation (Note 1, 2)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Maximum combined dissipation.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure NF
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes: 6. Short duration pulse test used to minimize self-heating effect.
MMDT3946
Document number: DS30123 Rev. 11 - 2
Characteristic Symbol Min Max Unit Test Condition
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
IBL ⎯
hFE
V
CE(SAT)
V
BE(SAT)
C
obo
C
ibo
hie
hre
hfe
hoe
fT
td ⎯
tr ⎯
ts ⎯
tf ⎯
2 of 6
www.diodes.com
= 25°C unless otherwise specified
A
60
40
⎯
⎯
V
V
5.0 6.0 V
⎯
50 nA
50 nA
40
70
100
60
30
⎯
0.65
⎯
⎯⎯
1.0 10
⎯
⎯
300
⎯
⎯
0.20
0.30
0.85
0.95
4.0 pF
8.0 pF
⎯
V
V
kΩ
0.5 8.0 x 10-4
100 400
1.0 40
300
⎯
⎯
5.0 dB
⎯
μS
MHz
35 ns
35 ns
200 ns
50 ns
MMDT3946
IC = 10μA, IE = 0
IC = 1.0mA, IB = 0
IE = 10μA, IC = 0
V
= 30V, V
CE
V
= 30V, V
CE
IC = 100µA, V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, V
IC = 100mA, VCE = 1.0V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure NF
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Characteristic Symbol Min Max Unit Test Condition
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
⎯
CEX
IBL ⎯
hFE
V
CE(SAT)
V
BE(SAT)
C
⎯
obo
C
⎯
ibo
hie
hre
hfe
hoe
fT
td ⎯
tr ⎯
ts ⎯
tf ⎯
= 25°C unless otherwise specified
A
-40
-40
-5.0
⎯
⎯
⎯
V
V
V
-50 nA
-50 nA
60
80
100
60
30
⎯
-0.65
⎯
⎯
⎯
300
⎯
⎯
-0.25
-0.40
-0.85
-0.95
⎯
V
V
4.5 pF
10 pF
2.0 12
kΩ
0.1 10 x 10-4
100 400
3.0 60
250
⎯
⎯
4.0 dB
⎯
μS
MHz
35 ns
35 ns
225 ns
75 ns
1,000
MMDT3946
IC = -10μA, IE = 0
IC = -1.0mA, IB = 0
IE = -10μA, IC = 0
V
= -30V, V
CE
V
= -30V, V
CE
IC = -100µA, V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -50mA, V
IC = -100mA, VCE = -1.0V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
VCB = -5.0V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
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without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
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