Diodes MMDT3906VC User Manual

Lead-free Green
A
M
L
B
C
H
K
G
D
C
1
B
2
E
2
C
2
E
1
B
1
C
1
B
2
E
2
C
2
E
1
B
1
TCUDORP WEN
Features
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
Ultra-Small Surface Mount Package
"Green" Device (Note 4)
Mechanical Data
Case: SOT-563
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Last Page
Ordering Information: See Last Page
Weight: 0.003 grams (approximate)
MMDT3906VC
DUAL PNP SMALL SIGNAL SURFACE MOUNT
TRANSISTOR
SOT-563
Typ
0.50
SEE NOTE 2
Dim Min Max
A
0.15 0.30 0.25
B
1.10 1.25 1.20
C
1.55 1.70 1.60
D G
0.90 1.10 1.00
H
1.50 1.70 1.60
K
0.56 0.60 0.60
L
0.10 0.30 0.20
M
0.10 0.18
All Dimensions in mm
Maximum Ratings
@ TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient Operating and Storage and Temperature Range
Thermal Characteristics
@ TA = 25°C unless otherwise specified
V V V
R
Tj, T
CBO CEO EBO
I
C
P
d
θJA
STG
-40 V
-40 V
-5.0 V
-200 mA 150
mW
833 °C/W
-55 to +150 °C
Characteristic Symbol Value Unit
Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient
Notes: 1. No purposefully added lead.
2. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php
P
d
R
θJA
150 833 °C/W
mW
DS30640 Rev. 3 - 2 1 of 4 MMDT3906VC
www.diodes.com Diodes Incorporated
TCUDORP WEN
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time
Notes: 5. Short duration test pulse used to minimize self-heating.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
h
V
CE(SAT)
V
BE(SAT)
C C
h h h
h
BL
FE
obo
ibo
oe
f
ie re fe
T
-40 V
-40 V
-5.0 V
-50 nA -50 nA
60 80
100
60 30
-0.65
 
300
 
-0.25
-0.40
-0.85
-0.95
4.5 pF 10 pF
2.0 12 k
0.1 10 x 10
100 400
3.0 60 µS
250 MHz
NF 4.0 dB
t
d
t
r
t
s
t
f
35 ns 35 ns 225 ns 75 ns
IC = -10µA, IE = 0 IC = -1.0mA, IB = 0 IE = -10µA, IC = 0 V
= -30V, V
CE
V
= -30V, V
CE
IC = -100µA, V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V
IC = -50mA, V IC = -100mA, VCE = -1.0V
IC = -10mA, IB = -1.0mA
V
IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA
V
IC = -50mA, IB = -5.0mA
VCB = -5.0V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0
-4
V
= 10V, IC = 1.0mA,
CE
f = 1.0kHz
VCE = -20V, IC = -10mA, f = 100MHz
V
= -5.0V, IC = -100µA,
CE
RS = 1.0kΩ, f = 1.0kHz
VCC = -3.0V, IC = -10mA, V
= 0.5V, IB1 = -1.0mA
BE(off)
VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA
EB(OFF) EB(OFF)
= -1.0V
CE
= -1.0V
CE
= -3.0V = -3.0V
DS30640 Rev. 3 - 2 2 of 4 MMDT3906VC
www.diodes.com
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