Page 1
Lead-free Green
A
M
L
B
C
H
K
G
D
C
1
B
2
E
2
C
2
E
1
B
1
C
1
B
2
E
2
C
2
E
1
B
1
TCUDORP WEN
Features
• Epitaxial Planar Die Construction
• Ideal for Low Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 4)
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Last Page
• Ordering Information: See Last Page
• Weight: 0.003 grams (approximate)
MMDT3906VC
DUAL PNP SMALL SIGNAL SURFACE MOUNT
TRANSISTOR
SOT-563
Typ
0.50
SEE NOTE 2
Dim Min Max
A
0.15 0.30 0.25
B
1.10 1.25 1.20
C
1.55 1.70 1.60
D
G
0.90 1.10 1.00
H
1.50 1.70 1.60
K
0.56 0.60 0.60
L
0.10 0.30 0.20
M
0.10 0.18
All Dimensions in mm
Maximum Ratings
@ TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient
Operating and Storage and Temperature Range
Thermal Characteristics
@ TA = 25°C unless otherwise specified
V
V
V
R
Tj, T
CBO
CEO
EBO
I
C
P
d
θJA
STG
-40 V
-40 V
-5.0 V
-200 mA
150
mW
833 °C/W
-55 to +150 °C
Characteristic Symbol Value Unit
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient
Notes: 1. No purposefully added lead.
2. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php
P
d
R
θJA
150
833 °C/W
mW
DS30640 Rev. 3 - 2 1 of 4 MMDT3906VC
www.diodes.com Diodes Incorporated
Page 2
TCUDORP WEN
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes: 5. Short duration test pulse used to minimize self-heating.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
h
V
CE(SAT)
V
BE(SAT)
C
C
h
h
h
h
BL
FE
obo
ibo
oe
f
ie
re
fe
T
-40 V
-40 V
-5.0 V
-50 nA
-50 nA
60
80
100
60
30
-0.65
300
-0.25
-0.40
-0.85
-0.95
4.5 pF
10 pF
2.0 12 kΩ
0.1 10 x 10
100 400
3.0 60 µS
250 MHz
NF 4.0 dB
t
d
t
r
t
s
t
f
35 ns
35 ns
225 ns
75 ns
IC = -10µA, IE = 0
IC = -1.0mA, IB = 0
IE = -10µA, IC = 0
V
= -30V, V
CE
V
= -30V, V
CE
IC = -100µA, V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -50mA, V
IC = -100mA, VCE = -1.0V
IC = -10mA, IB = -1.0mA
V
IC = -50mA, IB = -5.0mA
IC = -10mA, IB = -1.0mA
V
IC = -50mA, IB = -5.0mA
VCB = -5.0V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
-4
V
= 10V, IC = 1.0mA,
CE
f = 1.0kHz
VCE = -20V, IC = -10mA,
f = 100MHz
V
= -5.0V, IC = -100µA,
CE
RS = 1.0kΩ, f = 1.0kHz
VCC = -3.0V, IC = -10mA,
V
= 0.5V, IB1 = -1.0mA
BE(off)
VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
EB(OFF)
EB(OFF)
= -1.0V
CE
= -1.0V
CE
= -3.0V
= -3.0V
DS30640 Rev. 3 - 2 2 of 4 MMDT3906VC
www.diodes.com
Page 3
0.5
0.6
0.7
0.8
0.9
1.0
1 10 100
V , BASE-EMITTER (V)
BE(SAT)
SATURATION VOLTAGE
I , COLLECTOR CURRENT (mA)
C
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
I
C
I
B
= 10
0.01
0.1
10
1
1
10
100
1000
V , COLLECTOR-EMITTER (V)
CE(SAT)
SATURATION VOLTAGE
I , COLLECTOR CURRENT (mA)
C
Fig. 4, Typical Collector-Emitter Saturation Voltage
vs. Collector Current
I
C
I
B
= 10
1
10
1000
100
0.1
1
10
1000
100
h , DC CURRENT GAIN
FE
I , COLLECTOR CURRENT (mA)
C
Fig. 3, Typical DC Current Gain vs
Collector Current
T = -25°C
A
T = +25°C
A
T = 125°C
A
V = 1.0V
CE
1
100
10
0.1
1
10
100
C , INPUT CAPACITANCE (pF)
IBO
C , OUTPUT CAPACITANCE (pF)
OBO
V , COLLECTOR-BASE VOLTAGE (V)
CB
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
f = 1MHz
Cibo
Cobo
-50
0 50 100 150
250
200
150
50
100
0
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1, Derating Curve - Total
P , POWER DISSIPATION (mW)
d
TCUDORP WEN
DS30640 Rev. 3 - 2 3 of 4 MMDT3906VC
www.diodes.com
Page 4
TCUDORP WEN
ARK YM
Ordering Information
(Note 6)
Device
MMDT3906VC-7
Notes: 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Packaging Shipping
SOT-563 3000/Tape & Reel
Marking Information
ARK = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: R = 2004
M = Month ex: 9 = September
Date Code Key
Year 2004
Code
Month Jan Feb March Apr May Jun Jul
Code
1 2 3 4 5 6 7
R
2005 2006 2007 2008 2009
S T U V W
Aug Sep Oct Nov Dec
8 9 O N D
DS30640 Rev. 3 - 2 4 of 4 MMDT3906VC
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