Diodes MMDT3906 User Manual
Features
• Epitaxial Planar Die Construction
• Ideal for Low Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 3 and 4)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
• Terminal Connections: See Diagram
• Ordering and Date Code Information: See Page 4
• Marking Information: K3N, See Page 4
• Weight: 0.006 grams (approximate)
MMDT3906
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
K
J
A
C2B1E
E
B
2
2
H
D
C2B1E
E
B
2
2
1
C
B
C
1
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
M
H 1.80 2.20
J — 0.10
L
F
K 0.90 1.00
L 0.25 0.40
1
C
1
M 0.10 0.25
α
All Dimens mm ions in
0° 8°
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes: 1. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
V
V
V
R
Tj, T
CBO
CEO
EBO
IC
Pd
θ
JA
STG
-40 V
-40 V
-5.0 V
-200 mA
200 mW
625
-55 to +150
°C/W
°C
DS30124 Rev. 11 - 2
1 of 4
www.diodes.com
MMDT3906
© Diodes Incorporated
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
IBL
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
hFE
V
CE(SAT)
V
BE(SAT)
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
C
C
hie
hre
hfe
hoe
Current Gain-Bandwidth Product
Noise Figure NF
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes: 5. Short duration pulse test used to minimize self-heating effect.
DS30124 Rev. 11 - 2
www.diodes.com
obo
ibo
fT
td
tr
ts
tf
2 of 4
-40
-40
-5.0
⎯
⎯
60
80
100
60
30
⎯
-0.65
⎯
⎯
⎯
⎯
⎯
⎯
-50 nA
-50 nA
⎯
⎯
300
⎯
⎯
-0.25
-0.40
-0.85
-0.95
4.5 pF
10 pF
2.0 12
0.1 10 x 10-4
100 400
3.0 60
250
⎯
⎯
⎯
⎯
⎯
⎯
4.0 dB
35 ns
35 ns
225 ns
75 ns
V
IC = -10μA, IE = 0
V
IC = -1.0mA, IB = 0
V
IE = -10μA, IC = 0
V
= -30V, V
CE
V
= -30V, V
CE
IC = -100µA, V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
⎯
IC = -50mA, V
IC = -100mA, VCE = -1.0V
IC = -10mA, IB = -1.0mA
V
IC = -50mA, IB = -5.0mA
IC = -10mA, IB = -1.0mA
V
IC = -50mA, IB = -5.0mA
VCB = -5.0V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
kΩ
V
= 10V, IC = 1.0mA,
CE
f = 1.0kHz
⎯
μS
VCE = -20V, IC = -10mA,
MHz
f = 100MHz
V
= -5.0V, IC = -100μA,
CE
RS = 1.0kΩ, f = 1.0kHz
VCC = -3.0V, IC = -10mA,
V
= 0.5V, IB1 = -1.0mA
BE(off)
VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
= -3.0V
EB(OFF)
= -3.0V
EB(OFF)
= -1.0V
CE
= -1.0V
CE
© Diodes Incorporated
MMDT3906
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