
Features
A
M
L
B
C
H
K
G
D
C
1
B
2
E
2
C
2
E
1
B
1
· Epitaxial Planar Die Construction
· Ideal for Low Power Amplification and Switching
· Ultra-Small Surface Mount Package
· Lead Free By Design/RoHS Compliant (Note 4)
· "Green Device" (Note 5)
Mechanical Data
· Case: SOT-563
· Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminals: Finish - Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
· Terminal Connections: See Diagram
· Marking (See Page 2): APK
· Ordering Information: See Below
· Date Code Information: See Page 2
· Weight: 0.003 grams (approximate)
MMDT3904VC
DUAL NPN SMALL SIGNAL SURFACE MOUNT
TRANSISTOR
SOT-563
Typ
0.50
SEE NOTE 1
Dim Min Max
A
0.15 0.30 0.25
B
1.10 1.25 1.20
C
1.55 1.70 1.60
D
G
0.90 1.10 1.00
H
1.50 1.70 1.60
K
0.56 0.60 0.60
L
0.10 0.30 0.20
M
0.10 0.18 ¾
All Dimensions in mm
Maximum Ratings
@ TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Ordering Information
(Note 3)
Device
MMDT3904VC-7
Notes: 1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
4. No purposefully added lead.
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
V
V
V
R
Tj, T
CBO
CEO
EBO
I
C
P
d
qJA
STG
60 V
40 V
6.0 V
200 mA
200
625 °C/W
-55 to +150 °C
Packaging Shipping
SOT-563 3000/Tape & Reel
mW
DS30636 Rev. 4 - 2 1 of 4 MMDT3904VC
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Electrical Characteristics
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
@ TA = 25°C unless otherwise specified
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
h
BL
FE
60 ¾ V
40 ¾ V
5.0 ¾ V
¾ 50 nA
¾ 50 nA
40
70
100
60
30
V
CE(SAT)
V
BE(SAT)
C
C
h
h
h
h
obo
ibo
oe
f
T
ie
re
fe
¾
0.65
¾
¾ 4.0 pF
¾ 8.0 pF
1.0 10 kW
0.5 8.0 x 10
100 400 ¾
1.0 40 mS
300 ¾ MHz
NF ¾ 5.0 dB
t
d
t
r
t
s
t
f
¾ 35 ns
¾ 35 ns
¾ 200 ns
¾ 50 ns
¾
¾
300
¾
¾
0.20
0.30
0.85
0.95
IC = 10mA, IE = 0
IC = 1.0mA, IB = 0
IE = 10mA, IC = 0
V
= 30V, V
CE
V
= 30V, V
CE
IC = 100µA, V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
¾
IC = 50mA, V
IC = 100mA, VCE = 1.0V
IC = 10mA, IB = 1.0mA
V
IC = 50mA, IB = 5.0mA
IC = 10mA, IB = 1.0mA
V
IC = 50mA, IB = 5.0mA
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
-4
V
= 10V, IC = 1.0mA,
CE
f = 1.0kHz
VCE = 20V, IC = 10mA,
f = 100MHz
V
= 5.0V, IC = 100mA,
CE
RS = 1.0kW, f = 1.0kHz
VCC = 3.0V, IC = 10mA,
V
= - 0.5V, IB1 = 1.0mA
BE(off)
VCC = 3.0V, IC = 10mA,
IB1 = IB2 = 1.0mA
EB(OFF)
EB(OFF)
= 1.0V
CE
= 1.0V
CE
= 3.0V
= 3.0V
Notes: 6. Short duration test pulse used to minimize self-heating.
Marking Information
Date Code Key
Year 2005
Code S
Month Jan Feb March Apr May Jun Jul
Code
1 2 3 4 5 6 7
2006 2007 2008 2009
T U V W
APK = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: R = 2004
M = Month ex: 9 = September
2010 2011 2012
X Y Z
Aug Sep Oct Nov Dec
8 9 O N D
DS30636 Rev. 4 - 2 2 of 4 MMDT3904VC
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0.1
1
10
0.1 1 10
100
1000
V , BASE-EMITTER (V)
BE(SAT)
SATURATION VOLTAGE
I , COLLECTOR CURRENT (mA)
C
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
I
C
I
B
= 10
0.01
0.1
1
0.1 1 10
100
1000
V , COLLECTOR-EMITTER (V)
CE(SAT)
SATURATION VOLTAGE
I , COLLECTOR CURRENT (mA)
C
Fig. 4, Typical Collector-Emitter
Saturation Voltage vs. Collector Current
I
C
I
B
= 10
1
10
1000
100
0.1
1
10
1000
100
h , DC CURRENT GAIN
FE
I , COLLECTOR CURRENT (mA)
C
Fig. 3, Typical DC Current Gain vs
Collector Current
T = -25°C
A
T = +25°C
A
T = 125°C
A
V = 1.0V
CE
0
5
15
10
0.1
1
10
100
C , INPUT CAPACITANCE (pF)
IBO
C , OUTPUT CAPACITANCE (pF)
OBO
V , COLLECTOR-BASE VOLTAGE (V)
CB
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
Cibo
Cobo
f = 1MHz
-50
0 50 100 150
250
200
150
50
100
0
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1, Derating Curve - Total
P , POWER DISSIPATION (mW)
d
DS30636 Rev. 4 - 2 3 of 4 MMDT3904VC
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IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the
President of Diodes Incorporated.
DS30636 Rev. 4 - 2 4 of 4 MMDT3904VC
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