Diodes MMDT3904 User Manual
Features
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
SOT363
Top View
MMDT3904
40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT363
Mechanical Data
Case: SOT363
Case Material: Molded Plastic, “Green” Molding Compound,
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Finish. Solderable per MIL-STD-
202, Method 208
Weight: 0.006 grams (approximate)
Device Schematic
Top View
e3
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
MMDT3904-7-F K6N 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016 2017
Code X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul
Code 1 2 3 4 5 6 7
K6N = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Aug Sep Oct Nov Dec
8 9 O N D
MMDT3904
Document number: DS30088 Rev. 15 - 2
1 of 5
www.diodes.com
April 2013
© Diodes Incorporated
)
)
r
MMDT3904
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
V
CBO
V
CEO
V
EBO
I
C
60 V
40 V
6.0 V
200 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage and Temperature Range
P
D
R
θJA
T
, T
J
STG
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
BV
BV
BV
I
CBO
I
CEV
I
EBO
CBO
CEO
EBO
60
40
6.0
50 nA
50
50
50 nA
ON CHARACTERISTICS (Note 6)
300
0.20
0.30
0.85
0.95
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
CE(sat)
V
BE(sat)
40
70
h
FE
100
60
30
0.65
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
C
obo
C
ibo
h
h
h
h
oe
f
T
Noise Figure NF
ie
re
fe
0.5 8.0 x 10
100 400
1.0 40 µS
300
1.0 10
4.0 pF
8.0 pF
5.0 dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes: 5. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device
is measured when operating in a steady-state condition.
6. Short duration pulse test used to minimize self-heating effect.
t
d
t
t
s
t
f
35 ns
35 ns
200 ns
50 ns
MMDT3904
Document number: DS30088 Rev. 15 - 2
2 of 5
www.diodes.com
200 mW
625
-55 to +150
V
IC = 100µA, IE = 0
V
IC = 10.0mA, IB = 0
V
IE = 100µA, IC = 0
V
CB
V
V
V
CE
V
CE
V
EB
= 100µA, V
I
C
I
= 1.0mA, VCE = 1.0V
C
= 10mA, VCE = 1.0V
I
C
I
= 50mA, V
C
= 100mA, VCE = 1.0V
I
C
= 10mA, IB = 1.0mA
I
C
I
= 50mA, IB = 5.0mA
C
= 10mA, IB = 1.0mA
I
C
I
= 50mA, IB = 5.0mA
C
nA
= 50V
= 40V, V
= 40V, V
= 5V
BE(OFF
BE(ON
CE
CE
= 1.0V
C/W
C
= 3.0V
= 0.25V
= 1.0V
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
k
-4
= 10V, IC = 1.0mA,
V
CE
f = 1.0kHz
= 20V, IC = 10mA,
V
MHz
CE
f = 100MHz
V
= 5.0V, IC = 100A,
CE
R
= 1.0k f = 1.0kHz
S
V
= 3.0V, IC = 10mA,
CC
= - 0.5V, IB1 = 1.0mA
V
BE(off)
V
= 3.0V, IC = 10mA,
CC
I
= IB2 = 1.0mA
B1
April 2013
© Diodes Incorporated
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