Page 1
Features
Epitaxial Planar Die Construction
·
Complementary NPN Type Available (MMDT2222V)
·
Ultra-Small Surface Mount Package
·
Lead Free By Design/RoHS Compliant (Note 1)
·
"Green" Device (Note 2)
·
Qualified to AEC-Q101 Standards for High Reliability
·
Mechanical Data
NEW PRODUCT
Case: SOT-563, Molded Plastic
·
Case Material: Molded Plastic, "Green" Molding Compound,
·
UL Flammability Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
·
Terminal Connections: See Diagram
·
Terminals: Finish ¾ Matte Tin annealed over Copper
·
leadframe. Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Last Page
·
Ordering Information: See Last Page
·
Weight: 0.003 grams (approx.)
·
Lead-free Green
MMDT2907V
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
A
SOT-563
B
C
D
G
K
H
B
C
2
1
M
L
E
2
Dim Min Max
A
0.15 0.30 0.25
B
1.10 1.25 1.20
C
1.55 1.70 1.60
D
G
0.90 1.10 1.00
H
1.50 1.70 1.60
K
0.56 0.60 0.60
L
0.10 0.30 0.20
M
0.10 0.18 ¾
All Dimensions in mm
Typ
0.50
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage and Temperature Range
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
@ TA= 25°C unless otherwise specified
Characteristic Symbol Value Unit
@ TA= 25°C unless otherwise specified
E
1
V
CBO
V
CEO
V
EBO
I
T
j,TSTG
P
R
C
qJA
B
C
1
2
-60 V
-60 V
-5.0 V
-600 mA
-55 to +150 °C
d
150
833 °C/W
mW
DS30564 Rev. 4 - 2 1 of 4 MMDT2907V
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ã Diodes Incorporated
Page 2
Electrical Characteristics
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Base Cutoff Current
NEW PRODUCT
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
@ TA= 25°C unless otherwise specified
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
h
V
CE(SAT)
V
BE(SAT)
C
C
t
t
BL
FE
obo
ibo
f
T
off
t
d
t
off
r
-60 ¾ V
-60 ¾ V
-5.0 ¾ V
¾ -10
¾ -50 nA
¾ -50 nA
75
100
100
100
50
¾
¾
¾ 8.0 pF
—30pF
200 ¾ MHz
¾ 45 ns
¾ 10 ns
¾ 40 ns
¾ 100 ns
¾
¾
¾
300
¾
-0.4
-1.6
-1.3
-2.6
nA
mA
¾
V
V
I
= -10mA, IE= 0
C
= -10mA, IB= 0
I
C
I
= -10mA, IC= 0
E
V
= -50V, IE= 0
CB
V
= -50V, IE= 0, TA= 125°C
CB
= -30V, V
V
CE
= -30V, V
V
CE
I
= -100µA, VCE= -10V
C
I
= -1.0mA, VCE= -10V
C
I
= -10mA, VCE= -10V
C
I
= -150mA, VCE= -10V
C
I
= -500mA, VCE= -10V
C
= -150mA, IB= -15mA
I
C
I
= -500mA, IB= -50mA
C
= 150mA, IB= 15mA
I
C
I
= 500mA, IB= 50mA
C
= -10V, f = 1.0MHz, IE= 0
V
CB
= -2.0V, f = 1.0MHz, IC= 0
V
EB
= -20V, IC= -50mA,
V
CE
f = 100MHz
= -30V, IC= -150mA,
V
CC
I
= -15mA
B1
EB(OFF)
EB(OFF)
= -0.5V
= -0.5V
Notes: 4. Short duration test pulse used to minimize self-heating effect.
DS30564 Rev. 4 - 2 2 of 4 MMDT2907V
www.diodes.com
Page 3
250
O
O
O
O
O
O
O
O
35
200
N (mW)
150
100
NEW PRODUCT
WER DISSIPATI
d
50
P,P
0
-50
-1.6
-1.4
LTAGE (V)
-1.2
-1.0
-0.8
R-EMITTER V
-0.6
-0.4
LLECT
-0.2
CE
V,C
0
-0.001
0 50 100 150
T , AMBIENT TEMPERATURE ( C)
A
Fig. 1, Derating Curve - Total
I = -300mA
I = -100mA
C
-1
C
-10
I = -1mA
C
-0.01
I = -10mA
C
I = -30mA
C
-0.1
I BASE CURRENT (mA)
,
B
Fig. 3 Typical Collector Saturation Region
30
25
20
Cibo
15
10
T
C , CAPACITANCE (pF)
Cobo
5
0
0
24
°
V , REVERSE VOLTS (V)
Fig. 3 Typical
-0.6
I
C
=10
I
B
0
-1
I , COLLECTOR CURRENT (mA)
C
Fig. 4, Collector Emitter Saturation Voltage vs.
-100
-0.5
-0.4
EMITTER
RT
-0.3
LLECT
-0.2
SATURATION VOLTAGE (V)
-0.1
CE(SAT)
V,C
8
6
R
10
12
14 16 18
Capacitance Characteristics
T = 150°C
A
T = 25°C
A
-10
Collector Current
-100
T = -50°C
A
20
-1000
DS30564 Rev. 4 - 2 3 of 4 MMDT2907V
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Page 4
1000
O
1000
CC
100
URRENT
NEW PRODUCT
FE
10
h,D
GAIN (NORMALIZED)
V = -5V
CE
T = 150°C
A
T = 25°C
A
T = -50°C
A
LTAGE (V)
BE(ON)
V , BASE EMITTER V
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
V = -5V
CE
T = -50°C
A
T = 25°C
A
T = 150°C
A
1
-1
-10
I , COLLECTOR CURRENT (mA)
C
-100
-1000
-0.2
-0.1
Fig. 5, DC Current Gain vs
Collector Current
V = -5V
CE
100
10
T
f , GAIN BANDWIDTH PRODUCT (MHz)
1
-1
I , COLLECTOR CURRENT (mA)
C
-10
-100
Fig. 7, Gain Bandwidth Product vs.
Collector Current
Ordering Information
Device
MMDT2907V-7
Notes: 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
(Note 5)
Packaging Shipping
SOT-563 3000/Tape & Reel
-1
I , COLLECTOR CURRENT (mA)
C
-10
Fig. 6, Base Emitter Voltage
vs. Collector Current
-100
Marking Information
KAU = Product Type Marking Code
KAU YM
Date Code Key
Year 2004
Code
Month Jan Feb March Apr May Jun Jul
Code
1234 567
DS30564 Rev. 4 - 2 4 of 4 MMDT2907V
www.diodes.com
YM = Date Code Marking
Y = Year ex: R = 2004
M = Month ex: 9 = September
2005 2006 2007 2008 2009
R
ST U VW
Aug Sep Oct Nov Dec
89 O ND
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