Diodes MMDT2907A User Manual

1
Features
Ultra-Small Surface Mount Package
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
SOT363
SOT363
Top View
C
B1
E1
MMDT2907A
60V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363
Mechanical Data
Case: SOT363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Finish. Solderable per MIL-STD-
202, Method 208
Weight: 0.006 grams (approximate)
e3
C2
B2
E2
Device Symbol
Top View
Pin-Out
Ordering Information (Notes 4 & 5)
Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
MMDT2907A-7-F AEC-Q101 K2F 7 8 3,000
MMDT2907AQ-7-F Automotive K2F 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016 2017
Code X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
MMDT2907A
Datasheet Number DS30109 Rev.14 - 2
K2F = Product Type Marking Code YM = Date Code Marking Y = Year (ex: A = 2013) M = Month (ex: 9 = September)
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MMDT2907A
Absolute Maximum Ratings (@T
= +25°C unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
V
CBO
V
CEO
V
EBO
C
-60 V
-60 V
-5.0 V
-600 mA
Thermal Characteristics (@T
= +25°C unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient Air (Note 6) Operating and Storage Temperature Range
P
D
R
θJA
T
, T
J
STG
200 mW 625
-55 to +150
C/W
C
Electrical Characteristics (@T
= +25°C unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 7) Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current Base Cutoff Current
BV BV BV
CBO
CEX
CBO
CEO
EBO
BL
-60 — — V
-60 — — V
-5 — — V
— —
— — -50 nA
— —
-10
-10
— — -50 nA
IC = -10µA, IB = 0 IC = -10mA, IB = 0 IE = -10µA, IC = 0 V
CB
V
CB
= -50V, I = -50V, I
nA µA
VCE = -30V, V VCE = -30V, V
= 0
E
= 0, T
E
EB(OFF)
EB(OFF)
= +125°C
A
= -0.5V = -0.5V
ON CHARACTERISTICS (Note 7)
= -100µA ,VCE = -10V
C
= -1.0mA, VCE = -10V
C
= -10mA, VCE = -10V
C
= -150mA, VCE = -10V
C
= -500mA, VCE = -10V
C
= -150mA, IB = -15mA
C
V
= -500mA, IB = -50mA
C
= 150mA, IB = 15mA
C
V
= 500mA, IB = 50mA
C
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
CE(sat)
V
BE(sat)
75
100
h
FE
100 100
50
— —
— —
— — — — —
— — —
300
-0.4
-1.6
-1.3
-2.6 SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance
Current Gain Bandwidth Product
C
OBO
C
IBO
T
— — 8.0 pF — — 30 pF
200 — — MHz
VCB = -10V, f = 1.0MHz, IE = 0 VEB = -2.0V, f = 1.0MHz, IC = 0
= -20V, IC = -50mA,
V
CE
f = 100MHz SWITCHING CHARACTERISTICS Turn-On Time
Delay Time Rise Time Turn-Off TIme Storage Time Fall Time
Notes: 6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device
is measured when operating in a steady-state condition.
7. Short duration pulse test used to minimize self-heating effect.
off
d
off
s
f
— — 45 ns — — 10 — — 40 — — 100 — — 80 — — 30
ns ns ns ns ns
= -30V, IC = -150 mA,
V
CC
= -15mA
B1
= -6V, IC = -150 mA,
V
CC
= -IB2 = -15mA
B1
MMDT2907A
Datasheet Number DS30109 Rev.14 - 2
2 of 5
www.diodes.com
March 2014
© Diodes Incorporated
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