Features
A
M
J
L
D
F
B
C
H
K
C2B1E
1
E2B2C
1
MMDT2227M
COMPLEMENTARY NPN / PNP SMALL
SIGNAL SURFACE MOUNT TRANSISTOR
· Complementary Pair
· Epitaxial Planar Die Construction
· One 2222A Type (NPN),
One 2907A Type (PNP)
· Ideal for Low Power Amplification and Switching
· Lead Free By Design/RoHS Compliant (Note 2)
· "Green Device" (Note 3)
Mechanical Data
· Case: SOT-26
· Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminals: Finish - Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
· Terminal Connections: See Diagram
· Ordering & Date Code Information: See Page 3
· Marking (See Page 3): K27
· Weight: 0.006 grams (approximate)
Note: E1, B1, and C1 = 2907A Type (PNP),
E2, B2, and C2 = 2222A Type (NPN).
Type marking indicates orientation.
SOT-26
Dim Min Max Typ
A
0.35 0.50 0.38
B
1.50 1.70 1.60
C
2.70 3.00 2.80
D
¾ ¾ 0.95
F
¾ ¾ 0.55
H
2.90 3.10 3.00
J
0.013 0.10 0.05
K
1.00 1.30 1.10
L
0.35 0.55 0.40
M
0.10 0.20 0.15
a
0° 8° ¾
All Dimensions in mm
Maximum Ratings, 2222A Type (NPN)
@ TA = 25°C unless otherwise specified
Characteristic Symbol 2222A (NPN) Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Maximum Ratings, 2907A Type (PNP)
@ TA = 25°C unless otherwise specified
V
CBO
V
CEO
V
EBO
I
C
75 V
40 V
6.0 V
600 mA
Characteristic Symbol 2907A (PNP) Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Maximum Ratings, Total
@ TA = 25°C unless otherwise specified
V
CBO
V
CEO
V
EBO
I
C
-60 V
-60 V
-5.0 V
-600 mA
Characteristic Symbol Value Unit
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS30718 Rev. 4 - 2 1 of 4 MMDT2227M
R
Tj, T
P
qJA
d
STG
300
mW
417 °C/W
-55 to +150 °C
www.diodes.com ã Diodes Incorporated
Electrical Characteristics, 2222A Type (NPN)
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
EBO
I
h
V
CE(SAT)
V
BE(SAT)
C
C
BL
obo
f
t
t
t
t
FE
ibo
T
d
r
s
f
@ TA = 25°C unless otherwise specified
75 ¾ V
40 ¾ V
6.0 ¾ V
¾ 10
¾ 10 nA
¾ 10 nA
¾ 20 nA
35
50
75
100
40
50
35
¾
0.6
¾
¾
¾
¾
300
¾
¾
¾
0.3
1.0
1.2
2.0
¾ 8 pF
— 25 pF
300 ¾ MHz
¾ 10 ns
¾ 25 ns
¾ 225 ns
¾ 60 ns
IC = 10mA, IE = 0
IC = 10mA, IB = 0
IE = 10mA, IC = 0
VCB = 60V, IE = 0
nA
VCB = 60V, IE = 0, TA = 150°C
mA
V
= 60V, V
CE
V
= 3.0V, IC = 0
EB
V
= 60V, V
CE
IC = 100mA, V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, V
¾
IC = 500mA, VCE = 10V
IC = 10mA, VCE = 10V, TA = -55°C
IC = 150mA, VCE = 1.0V
IC = 150mA, IB = 15mA
V
IC = 500mA, IB = 50mA
IC = 150mA, IB = 15mA
V
IC = 500mA, IB = 50mA
VCB = 10V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 20V, IC = 20mA,
f = 100MHz
VCC = 30V, IC = 150mA,
V
BE(off)
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
= 3.0V
EB(OFF)
= 3.0V
EB(OFF)
= 10V
CE
= 10V
CE
= - 0.5V, IB1 = 15mA
Note: 4. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
DS30718 Rev. 4 - 2 2 of 4 MMDT2227M
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