DIODES MMDT2227 Datasheet

Features

Complementary Pair

·

Epitaxial Planar Die Construction

·

Ultra-Small Surface Mount Package

·

One 2222A-Type NPN,

·

One 2907A-Type PNP
Ideal for Low Power Amplification and

·

Switching

Mechanical Data

Case: SOT-363, Molded Plastic

·

Terminals: Solderable per MIL-STD-202,

·

Method 208
Terminal Connections: See Diagram

·

Marking: K27

· Weight: 0.006 grams (approx.)

MMDT2227

COMPLEMENTARY NPN / PNP SMALL

SIGNAL SURFACE MOUNT TRANSISTOR

A

C2B1E

KXX

E2B2C

K

J

Note: E1, B1, and C1 = PNP2907A Section,

E2, B2, and C2 = NPN2222A Section.
Type marking indicates orientation.

1

C

B

1

H

L

FD

SOT-363

Dim Min Max

A

B

C

D

F

H

J

M

K

L

M

All Dimensions in mm

0.10 0.30

1.15 1.35

2.00 2.20

0.65 Nominal

0.30 0.40

1.80 2.20

¾ 0.10

0.90 1.00

0.25 0.40

0.10 0.25

Maximum Ratings, NPN2222A Section

Characteristic Symbol NPN2222A Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous (Note 1)

Power Dissipation (Note 1)

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage and Temperature Range

Maximum Ratings, PNP2907A Section

Characteristic Symbol PNP2907A Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous (Note 1)

Power Dissipation (Note 1)

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage and Temperature Range

@ TA= 25°C unless otherwise specified

V

CBO

V

CEO

V

EBO

I

C

P

d

R

qJA

T

j,TSTG

@ TA= 25°C unless otherwise specified

V

CBO

V

CEO

V

EBO

I

C

P

d

R

qJA

T

j,TSTG

75 V

40 V

6.0 V

600 mA

200

625 K/W

-55 to +150 °C

-60 V

-60 V

-5.0 V

-600 mA

200

625 K/W

-55 to +150 °C

mW

mW

Note: 1. Valid provided that terminals are kept at ambient temperature.

2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.

DS30122 Rev. B-2 1 of 4 MMDT2227

Electrical Characteristics, NPN2222A Section

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Collector Cutoff Current

Emitter Cutoff Current

Base Cutoff Current

ON CHARACTERISTICS (Note 2)

DC Current Gain

Collector-Emitter Saturation Voltage

Base- Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Input Capacitance

Current Gain-Bandwidth Product

Noise Figure

SWITCHING CHARACTERISTICS

Delay Time

Rise Time

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

CEX

I

EBO

I

BL

h

FE

V

CE(SAT)

V

BE(SAT)

C

obo

C

ibo

f

T

NF ¾ 4.0 dB

t

d

t

r

@ TA= 25°C unless otherwise specified

= 10mA, IE= 0

nA

mA

¾

V

V

I

C

= 10mA, IB= 0

I

C

= 10mA, IC= 0

I

E

V

CB

V

CB

V

CE

= 3.0V, IC= 0

V

EB

= 60V, V

V

CE

I

= 100mA, VCE= 10V

C

I

= 1.0mA, VCE= 10V

C

I

= 10mA, VCE= 10V

C

I

= 150mA, VCE= 10V

C

I

= 500mA, VCE= 10V

C

= 10mA, VCE= 10V, TA= -55°C

I

C

I

= 150mA, VCE= 1.0V

C

= 150mA, IB= 15mA

I

C

I

= 500mA, IB= 50mA

C

= 150mA, IB= 15mA

I

C

I

= 500mA, IB= 50mA

C

V

CB

= 0.5V, f = 1.0MHz, IC= 0

V

EB

V

CE

f = 100MHz

= 10V, IC= 100mA,

V

CE

= 1.0kW, f = 1.0kHz

R

S

V

CC

V

BE(off)

75 ¾ V

40 ¾ V

6.0 ¾ V

¾ 10

¾ 10 nA

¾ 10 nA

¾ 20 nA

35
50
75

100

40
50
35

¾

0.6

¾

¾
¾
¾

300

¾
¾
¾

0.3

1.0

1.2

2.0

¾ 8pF

—25pF

300 ¾ MHz

¾ 10 ns

¾ 25 ns

= 60V, IE= 0
= 60V, IE= 0, TA= 150°C

= 60V, V

EB(OFF)

EB(OFF)

= 3.0V

= 3.0V

= 10V, f = 1.0MHz, IE= 0

= 20V, IC= 20mA,

= 30V, IC= 150mA,

= - 0.5V, IB1= 15mA

Note: 1. Valid provided that terminals are kept at ambient temperature.

2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.

DS30122 Rev. B-2 2 of 4 MMDT2227