Diodes MMDT2222V User Manual
Features
Epitaxial Planar Die Construction
·
Complementary PNP Type Available
·
(MMDT2907V)
Ultra-Small Surface Mount Package
·
Lead Free By Design/RoHS Compliant (Note 1)
·
"Green" Device (Note 2)
·
Qualified to AEC-Q101 Standards for High Reliability
·
Mechanical Data
NEW PRODUCT
Case: SOT-563, Molded Plastic
·
Case Material: Molded Plastic, “Green” Molding
·
Compound. UL Flammability Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
·
Terminal Connections: See Diagram
·
Terminals: Finish ¾ Matte Tin annealed over Copper
·
leadframe. Solderable per MIL-STD-202, Method 208
Polarity: See Diagrams Below
·
Marking & Type Code Information: See Last Page
·
Ordering Information: See Last Page
·
Weight: 0.003 grams (approx.)
·
Lead-free Green
MMDT2222V
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
A
SOT-563
B
C
D
G
K
H
B
C
2
1
B
E
1
1
M
L
E
2
C
2
Dim Min Max
A
0.15 0.30 0.25
B
1.10 1.25 1.20
C
1.55 1.70 1.60
D
G
0.90 1.10 1.00
H
1.50 1.70 1.60
K
0.56 0.60 0.60
L
0.10 0.30 0.20
M
0.10 0.18 ¾
All Dimensions in mm
Typ
0.50
Maximum Ratings
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage and Temperature Range
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
@ TA= 25°C unless otherwise specified
@ TA= 25°C unless otherwise specified
V
CBO
V
CEO
V
EBO
I
T
j,TSTG
P
R
C
qJA
75 V
40 V
6.0 V
600 mA
-55 to +150 °C
d
150
833 °C/W
mW
DS30563 Rev. 4 - 2 1 of 4 MMDT2222V
www.diodes.com
ã Diodes Incorporated
Electrical Characteristics
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
NEW PRODUCT
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
@ TA= 25°C unless otherwise specified
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
EBO
I
h
V
CE(SAT)
V
BE(SAT)
C
C
BL
FE
obo
ibo
f
T
75 ¾ V
40 ¾ V
6.0 ¾ V
¾ 10
¾ 10 nA
¾ 10 nA
¾ 20 nA
35
50
75
100
40
50
35
¾
0.6
¾
¾ 8pF
—25pF
300 ¾ MHz
NF ¾ 4.0 dB
t
d
t
r
t
s
t
f
¾ 10 ns
¾ 25 ns
¾ 225 ns
¾ 60 ns
¾
¾
¾
300
¾
¾
¾
0.3
1.0
1.2
2.0
nA
mA
¾
V
V
= 10mA, IE= 0
I
C
= 10mA, IB= 0
I
C
= 10mA, IC= 0
I
E
V
= 60V, IE= 0
CB
V
= 60V, IE= 0, TA= 150°C
CB
= 60V, V
V
CE
= 3.0V, IC= 0
V
EB
= 60V, V
V
CE
I
= 100mA, VCE= 10V
C
I
= 1.0mA, VCE= 10V
C
I
= 10mA, VCE= 10V
C
I
= 150mA, VCE= 10V
C
I
= 500mA, VCE= 10V
C
I
= 10mA, VCE= 10V, TA= -55°C
C
I
= 150mA, VCE= 1.0V
C
= 150mA, IB= 15mA
I
C
I
= 500mA, IB= 50mA
C
= 150mA, IB= 15mA
I
C
I
= 500mA, IB= 50mA
C
= 10V, f = 1.0MHz, IE= 0
V
CB
= 0.5V, f = 1.0MHz, IC= 0
V
EB
= 20V, IC= 20mA,
V
CE
f = 100MHz
= 10V, IC= 100mA,
V
CE
R
= 1.0kW, f = 1.0kHz
S
= 30V, IC= 150mA,
V
CC
V
= - 0.5V, IB1= 15mA
BE(off)
= 30V, IC= 150mA,
V
CC
I
= IB2= 15mA
B1
EB(OFF)
EB(OFF)
= 3.0V
= 3.0V
Notes: 4. Short duration test pulse used to minimize self-heating effect.
DS30563 Rev. 4 - 2 2 of 4 MMDT2222V
www.diodes.com
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