Diodes MMDT2222A User Manual
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (MMDT2907A)
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 3 and 4)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe)
• Terminal Connections: See Diagram
• Marking Information: K1P, See Page 4
• Ordering & Date Code Information: See Page 4
• Weight: 0.006 grams (approximate)
MMDT2222A
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
A
C
B
2
1
E
B
2
2
H
K
J
D
C
B
2
1
E
B
2
2
E
1
C
B
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C
1
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
M
H 1.80 2.20
J — 0.10
L
F
E
1
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
α
C
1
All Dimens mm ions in
0° 8°
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
V
V
V
R
Tj, T
CBO
CEO
EBO
IC
Pd
JA
θ
STG
75 V
40 V
6.0 V
600 mA
200 mW
625
-55 to +150
°C/W
°C
DS30125 Rev. 12 - 2
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MMDT2222A
© Diodes Incorporated
P
P
O
R
PATIO
C
C
U
R
RENT
G
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
EBO
IBL
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
hFE
V
CE(SAT)
V
BE(SAT)
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
C
C
Current Gain-Bandwidth Product
Noise Figure NF
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes: 5. Short duration pulse test used to minimize self-heating effect.
200
⎯
⎯
obo
ibo
fT
td
tr
ts
tf
75
40
6.0
⎯
⎯
⎯
10
⎯
⎯
⎯
35
50
75
100
40
50
35
10 nA
10 nA
20 nA
⎯
⎯
⎯
300
⎯
⎯
⎯
0.3
1.0
0.6
⎯
⎯
1.2
2.0
8 pF
— 25 pF
300
⎯
⎯
⎯
⎯
⎯
4.0 dB
225 ns
MHz
⎯
10 ns
25 ns
60 ns
1,000
V
IC = 10μA, IE = 0
V
IC = 10mA, IB = 0
V
IE = 10μA, IC = 0
nA
VCB = 60V, IE = 0
μA
VCB = 60V, IE = 0, TA = 150°C
V
= 60V, V
CE
V
= 3.0V, IC = 0
EB
V
= 60V, V
CE
IC = 100μA, V
EB(OFF)
EB(OFF)
= 10V
CE
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
⎯
IC = 150mA, V
CE
= 10V
IC = 500mA, VCE = 10V
IC = 10mA, VCE = 10V, TA = -55°C
IC = 150mA, VCE = 1.0V
IC = 150mA, IB = 15mA
V
IC = 500mA, IB = 50mA
IC = 150mA, IB = 15mA
V
IC = 500mA, IB = 50mA
VCB = 10V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 20V, IC = 20mA,
f = 100MHz
V
= 10V, IC = 100μA,
CE
RS = 1.0kΩ, f = 1.0kHz
VCC = 30V, IC = 150mA,
V
= - 0.5V, IB1 = 15mA
BE(off)
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
= 3.0V
= 3.0V
T = 125°C
A
N (mW)
150
DISSI
100
WE
,
D
50
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
150
175
200
Fig. 1, Max Power Dissipation vs.
Ambient Temperature
DS30125 Rev. 12 - 2
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AIN
100
FE
h, D
10
1
0.1
T = +25°C
T = -25°C
A
I , COLLECTOR CURRENT (mA)
C
A
1
10
Fig. 2, Typical DC Current Gain vs.
Collector Current
V = 1.0V
100
CE
1,000
MMDT2222A
© Diodes Incorporated
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