Diodes MBR3045CTP User Manual
g
A
Features
• Low Forward Voltage Drop
• Soft, Fast Switching Capability
• Schottky Barrier Chip
• ITO-220S Heat Sink Tab Electrically Isolated from Cathode
• UL Approval in Accordance with UL 1557, Reference No.
E94661
NEW PRODUCT
Top View
Bottom View
MBR3045CTP
30A SCHOTTKY BARRIER RECTIFIER
Mechanical Data
• Case: ITO-220S
• Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
• Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 1.335 grams (approximate)
4
Isolated
2
Common
1
Cathode
Anode
Package Pin Out
Confi
uration
3
Anode
Ordering Information (Note 1)
Part Number Case Packaging
MBR3045CTP ITO-220S 50 pieces/tube
Notes: 1. For packaging details, go to our website at http://www.diodes.com.
Marking Information
MBR
3045CTP
YYWW AB
MBR3045CTP
Document number: DS31796 Rev. 7 - 2
MBR3045CTP = Product Type Marking Code
B = Foundry and Assembly Code
YYWW = Date Code Marking
YY = Last two digits of year (ex: 09 = 2009)
WW = Week (01 - 53)
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www.diodes.com
November 2011
© Diodes Incorporated
θ
P, P
O
R
P
T
O
Maximum Ratings (Per Leg) @T
= 25°C unless otherwise specified
A
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current (Per Leg)
(Total)
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Isolation Voltage
From terminal to heatsink t = 1min.
NEW PRODUCT
Thermal Characteristics (Per Leg)
Characteristic Symbol Value Unit
Maximum Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
MBR3045CTP
V
RRM
V
RWM
V
RM
I
O
I
FSM
V
AC
R
JC
T
, T
J
STG
45 V
15
30
A
250 A
2000 V
3
°C/W
-65 to +175 ºC
Electrical Characteristics (Per Leg) @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop
Leakage Current (Note 2)
Notes: 2. Short duration pulse test used to minimize self-heating effect.
3. Device mounted on Black Aluminum Heatsink, 45mm * 20mm * 12mm.
10
9
8
N (W)
7
I
A
6
5
DISSI
4
WE
3
D
2
1
0
0 5 10 15 20
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Fig. 1 Forward Power Dissipation
V
F
I
R
-
-
0.58
0.53
11
5.7
0.65
0.57
200
40
V
μA
mA
I
F
= 15A, TJ = 125ºC
I
F
V
= 45V, TJ = 25ºC
R
V
= 45V, TJ = 125ºC
R
= 15A, TJ = 25ºC
100
10
1
0.1
0.01
0.001
F
I , INSTANTANEOUS FORWARD CURRENT (A)
0.0001
0 100 200 300 400 500 600 700 800
V , INSTANTANEOUS FORWARD VOL TAGE (mV)
F
Fig. 2 Typical Forward C haracte ristics
MBR3045CTP
Document number: DS31796 Rev. 7 - 2
2 of 4
www.diodes.com
November 2011
© Diodes Incorporated
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