HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR2150
Data Sheet
General Description
The MBR2150 is a high voltage dual Schottky
rectifier suited for switch mode power supplies and
other power converters. This device is intended for
use in medium voltage operation, and particularly, in
high frequency circuits where low switching losses
and low noise are required.
The MBR2150 is available in standard DO-214AC
and DO-15 packages.
Features
•
Low Forward Voltage: 0.67V at 125°C
• High Surge Capacity
• Operating Junction Temperature: 150°C
• Guard−ring for Stress Protection
• Lead Free Packages Available
Main Product Characteristics
I
F(AV)
V
RRM
TJ(MAX)
VF(MAX)
(I
=2A, TC=125°C)
F
2A
150V
150°C
0.67V
Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets UL 94V-0 @ 0.125in
• Weight (Approximately): 1.9Grams
• Finish: All External Surfaces Corrosion
Resistant and Terminal
• Leads are Readily Solderable
• Lead Temperature for Soldering Purpose:
260°C Maximum for 10 Seconds
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
DO-214AC DO-15
Figure 1. Package Types of MBR2150
Aug. 2011 Rev. 1. 2 BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR2150
Pin Configuration
VR Package VG Package
(DO-214AC) (DO-15)
Cathode line by
marking
Cathode Anode
Cathode line
Cathode Anode
Figure 2. Pin Configuration of MBR2150 (Top View)
by marking
Ordering Information
MBR2150 -
Circuit Type
Package
VR: DO-214AC
VG: DO-15
Part Number Marking ID
Package
Lead Free Green
DO-214AC MBR2150VRTR-E1 MBR2150VRTR-G1 2150VE 2150VR Tape & Reel
DO-15
MBR2150VG-E1 MBR2150VG-G1 2150VG 2150GG Bulk
MBR2150VGTR-E1 MBR2150VGTR-G1 2150VG 2150GG Ammo
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Products with “G1” suffix are available in green packages.
Aug. 2011 Rev. 1. 2 BCD Semiconductor Manufacturing Limited
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E1: Lead Free
G1: Green
Blank: Bulk
TR: Ammo and Tape & Reel
Lead
Free
Green
Packing
Type
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR2150
Absolute Maximum Ratings (Note 1)
Parameter Symbol Value Unit
Peak Repetitive Reverse Voltage V
Working Peak Reverse Voltage V
DC Blocking Voltage VR
Average Rectified Forward Current (Rated VR, TC=TBD) I
Non Repetitive Peak Surge Current (Surge Applied at Rated
Load Conditions Half Wave, Single Phase, 60Hz)
Operating Junction Temperature Range (Note 2) TJ -65 to 150
RRM
RWM
2 A
F(AV)
I
75 A
FSM
150 V
°C
Storage Temperature Range T
Voltage Rate of Change (Rated VR) dv/dt 10000
ESD (Machine Model=C) 400 V
ESD (Human Body Model=3B) 8000 V
-65 to 150
STG
°C
V/µs
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
.
1/θ
JA
/dTJ <
D
Recommended Operating Conditions
Parameter Symbol Condition Value Unit
θJL
Maximum1Thermal
Resistance
θ
JA
Aug. 2011 Rev. 1. 2 BCD Semiconductor Manufacturing Limited
Junction to Lead
Junction1to1Ambient
3
DO-214AC
23
DO-15
°C/W
DO-214AC 90
DO-15 80