Diodes MBR2150 User Manual

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR2150

Data Sheet

General Description

The MBR2150 is a high voltage dual Schottky
rectifier suited for switch mode power supplies and
other power converters. This device is intended for
use in medium voltage operation, and particularly, in
high frequency circuits where low switching losses
and low noise are required.

The MBR2150 is available in standard DO-214AC
and DO-15 packages.

Features

•

Low Forward Voltage: 0.67V at 125°C

• High Surge Capacity

• Operating Junction Temperature: 150°C

• Guard−ring for Stress Protection

• Lead Free Packages Available

Main Product Characteristics

I

F(AV)

V

RRM

TJ(MAX)

VF(MAX)

(I

=2A, TC=125°C)

F

2A

150V

150°C

0.67V

Mechanical Characteristics

• Case: Epoxy, Molded

• Epoxy Meets UL 94V-0 @ 0.125in

• Weight (Approximately): 1.9Grams

• Finish: All External Surfaces Corrosion
Resistant and Terminal

• Leads are Readily Solderable

• Lead Temperature for Soldering Purpose:

260°C Maximum for 10 Seconds

Applications

• Power Supply − Output Rectification

• Power Management

• Instrumentation

DO-214AC DO-15

Figure 1. Package Types of MBR2150

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Data Sheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR2150

Pin Configuration

VR Package VG Package
(DO-214AC) (DO-15)

Cathode line by

marking

Cathode Anode

Cathode line

Cathode Anode

Figure 2. Pin Configuration of MBR2150 (Top View)

by marking

Ordering Information

MBR2150 -

Circuit Type

Package
VR: DO-214AC
VG: DO-15

Part Number Marking ID

Package

Lead Free Green

DO-214AC MBR2150VRTR-E1 MBR2150VRTR-G1 2150VE 2150VR Tape & Reel

DO-15

MBR2150VG-E1 MBR2150VG-G1 2150VG 2150GG Bulk

MBR2150VGTR-E1 MBR2150VGTR-G1 2150VG 2150GG Ammo

BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Products with “G1” suffix are available in green packages.

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E1: Lead Free
G1: Green

Blank: Bulk
TR: Ammo and Tape & Reel

Lead

Free

Green

Packing

Type

Data Sheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR2150

Absolute Maximum Ratings (Note 1)

Parameter Symbol Value Unit

Peak Repetitive Reverse Voltage V
Working Peak Reverse Voltage V
DC Blocking Voltage VR

Average Rectified Forward Current (Rated VR, TC=TBD) I

Non Repetitive Peak Surge Current (Surge Applied at Rated
Load Conditions Half Wave, Single Phase, 60Hz)

Operating Junction Temperature Range (Note 2) TJ -65 to 150

RRM

RWM

2 A

F(AV)

I

75 A

FSM

150 V

°C

Storage Temperature Range T

Voltage Rate of Change (Rated VR) dv/dt 10000

ESD (Machine Model=C) 400 V

ESD (Human Body Model=3B) 8000 V

-65 to 150

STG

°C

V/µs

Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.

Note 2: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP

.

1/θ

JA

/dTJ <

D

Recommended Operating Conditions

Parameter Symbol Condition Value Unit

θJL

Maximum1Thermal
Resistance

θ

JA

Aug. 2011 Rev. 1. 2 BCD Semiconductor Manufacturing Limited

Junction to Lead

Junction1to1Ambient

3

DO-214AC

23

DO-15

°C/W

DO-214AC 90

DO-15 80

Data Sheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR2150

Electrical Characteristics

Parameter Symbol Conditions Value Unit

Maximum Instantaneous Forward
Voltage Drop (Note 3)

IF=2A, TC=25°C

VF (MAX)

IF=2A, TC=125°C

0.85
V

0.67

Maximum Instantaneous Reverse
Current (Note 3)

IR (MAX)

Rated DC Voltage,

=25°C

T

C

Rated DC Voltage,
T

=125°C

C

Note 3: Pulse Test: Pulse Width=300µs, Duty Cycle≤2.0%.

Typical Performance Characteristics

10

1

0.1

, Instantaneous Forward Current (A)

F

I

0.01

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

VF, Instantaneous Forward Voltage (V)

Figure 4. Typical Forward Characteristics Figure 5. Typical Reverse Characteristics

TJ=25oC
TJ=125oC
TJ=150oC

0.1

2.0

TJ=150oC

3

10

2

10

1

10

0

10

-1

10

-2

10

, Instantaneous Reverse Current (µA)

R

I

-3

10

0 20 40 60 80 100 120 140 160

TJ=125oC

TJ=25oC

, Instantaneous Reverse Voltage (V)

V

R

mA

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Data Sheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR2150

Mechanical Dimensions

DO-214AC Unit: mm(inch)

Cathode line by

marking

1.900(0.075)

2.290(0.090)

3.990(0.157)

4.600(0.181)

0.152(0.006)

0.305(0.012)

0.760(0.030)

1.520(0.060)

4.800(0.189)

5.280(0 .208)

0.100(0.004)

0.310(0.012)

Aug. 2011 Rev. 1. 2 BCD Semiconductor Manufacturing Limited

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Data Sheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR2150

Mechanical Dimensions (Continued)

DO-15 Unit: mm(inch)

Aug. 2011 Rev. 1. 2 BCD Semiconductor Manufacturing Limited

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BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-

other rights nor the rights of others.

cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any

cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any

particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use

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